th 6 th 7 and Generation IGBT Module for Industrial Applications Mitsubishi Electric Corporation T.Radke K.Masuda C-140917-01 1 Outline 1. Background 2. 6th generation IGBT module 2.1 Thermal resistance 2.2 ∆Tj-c Performance Benchmark 2.3 Chip comparison between 6th and 6.1th 3. 7th generation IGBT module 3.1 Package technologies 3.2 Chip technologies 3.3 Power Loss 3.4 Summary C-140917-01 2 1. Background ■Industrial applications Motor control IGBT module Medical device Renewable power generation UPS Robotics Lift Common requirements are “High reliability”, “Low loss”, “Compact” and “Lightweight”. C-140917-01 3 2. 6th generation IGBT module ■Package type NX-Series ■Features Feature ・Low Rth(j-c) by AlN isolation ・2 types of chip technologies appling 6th gen. and 6.1th gen. chip ・Tjmax=175degC ・Low gate capacitance ■Package type MPD, S-Series 140mm 62mm 130mm 80mm 150mm 166mm 80mm 110mm C-140917-01 4 2.1 Thermal resistance Specific thermal resistance of the substrate (normalized) 800% Structure of IGBT module IGBT chip Solder Cu pattern 700% 700% 600% 500% Substrate 400% 300% 200% 100% 0% Cu layer Solder 100% AlN Al2O3 Cu base plate Mitsubishi Gen. AlN Conventional module Al2O3 6th C-140917-01 Module Rating 6th Gen. Rth(j-c)Q Al2O3Module Rth(j-c)Q Al2O3 Module is x % Higher 100A / 1200V CIB 0.20 K/W 0.29K/W +45% 150A / 1200V (6in1) 0.013 K/W 0.02 K/W +54% 450A /1200V (2in1) 0.044 K/W 0.066 K/W +50% 5 2.2 ∆Tj-c Performance Benchmark 6th gen. IGBT Module Conventional Al2O3 Module A Conventional Al2O3 Module B ΔTj-c=35℃(Tcase=115℃, Tj=150℃) , fc=5kHz , cos(φ)=0.8 , VCC=600V , m=0.9 C-140917-01 6 2.3 Chip comparison between 6th and 6.1th structure 6.1th Gen. no change Termination IGBT 6th Gen. Diode Shrinking Err is reduced CM450DX-24S(6th gen.) C-140917-01 Condition : VCC=600V, Ic=450A, VGE=+15/-15V, RG=0Ω, Tj=150℃ CM450DX-24S1(6.1th gen.) 7 2.3 Diode Chip trade-off Err vs. VF trade-off Err [mJ] 60 50 6.1th gen. CM450DX-24S1 40 6th gen. CM450DX-24S 30 Conventional Company I Module A 14% Err reduction 20 Company F Module B Conventional 10 (datasheet values @ IC=450A VCC=600V Tj=150°C) 0 0 0.5 1 1.5 2 2.5 VF [V] 6.1th gen. diode trade-off is optimized for lower switching losses C-140917-01 8 2. 6th generation IGBT module ■6th gen. IGBT module 1.Package technologies Low Rth(j-c) by AlN isolation →High power capability compared with Al2O3 module. →Same ΔTj as Al2O3 module by 55% more power @600A 2. Chip technologies →6.1th is optimized for high fc application • • Package optimization Chip technology improvement 7th gen. IGBT module C-140917-01 9 9 3. 7th generation IGBT module ■Concept of 7th gen. IGBT module Package IGBT ・High reliability ・Low inductance ・Compact ・Lightweight ・Low VCEsat ・Low Eoff Diode ・Low VF ・Low Qrr (=Low Eon + Err) ・Suppress snap-off recovery High reliability, Low losses, Compact and Lightweight. C-140917-01 10 3.1.1 Substrate ※PC-TIM: Phase Change – Thermal Interface Matrial ■Thermal resistance Heat dissipation simulation Thermal resistance simulation 1.2 Condition: Ta=25 ℃, U=800 W/m2・K, Same chip size. Condition: Same chip size. 85 Rth (Ratio) 1.0 63 0.8 0.6 0.66 Half 0.4 0.2 0.0 0.34 40 Chip AlN Base plate Grease Rth(j-c) 0.34 0.30 6th gen. + Grease 7th gen. + PC-TIM Rth(c-s) 6th gen. Si3N4 PCTIM 7th gen. The Internal thermal resistance of the 7th gen. is a half of the 6th gen. C-140917-01 11 3.1.1 Substrate ■Experimental result SAT pictures before and after thermal cycling test (-40~125℃) Conventional structure Before test After 300cyc. 7th gen. structure Before test After 1000cyc. Corner of Cu pattern No crack had been observed until 1000cyc., which is 3 times larger. C-140917-01 12 3.1.2 Main terminal ■Package inductance 6th generation 7th generation US bonding laminate area By using laminated main terminals, package inductance is reduced by 30%. C-140917-01 13 3.1.3 Results ■1200V/600A, dual 6th generation Item 7th generation 6th gen. 7th gen. Thermal resistance (Ratio) 1 0.5 Reduction of 50% Thermal cycling (Ratio) 1 3~ Increasing 3 times Inductance (Ratio) 1 0.7 Reduction of 30% Package size (W*D*H) Weight 110×80×29 mm 580 g Improvement 108×62×30mm Reduction of 20% 320 g Reduction of 45% New compact and lightweight package is realized. C-140917-01 14 3.2 Chip technologies 3.2.1 IGBT chip Key point ■Cross section structure 1. Thin N- drift layer Low VCEsat Low Eoff 2. Optimized cell design easier controllability of dV/dt by Rg 7th gen. dV/dt [kV/μs] (MAX) 6th/6.1th gen. Rg [Ω] 7th gen. IGBT has better static and dynamic characteristics. C-140917-01 15 3.2.1 IGBT chip ■Experimental result 3.5 JC vs. VCEsat JC vs. Eoff Condition: Condition:TTj=125℃ a=125 ℃ Condition:VCC Vcc=600V, Condition: =600 V, TTj=125℃ a=125 ℃ 35 3.0 30 6th gen. 25 2.0 20 7th gen. 1.5 15 10 1.0 7th gen. 5 0.5 0 6th gen. Eoff [mJ] VCEsat [V] 2.5 0 100 200 300 JC [A/cm2] 400 500 0 0 100 200 300 400 500 JC [A/cm2] The 7th gen. IGBT has the better VCEsat and Eoff. C-140917-01 16 3.2.2 Diode chip ■Cross section structures 6th gen.: N buffer diode 7th gen.: RFC diode ※RFC - diode: Relaxed Field of Cathode - diode Key point 1. Thinner N drift layer Low VF Low Qrr Low (Err + Eon) 2. N+/P cathode structure Suppress snap-off recovery C-140917-01 17 3.3 Power Loss ■Power loss simulation Condition: fc=10 kHz, dv/dt =10 kV/μs, VCC=600 V, Tj=125 ℃, Same chip size 15% reduction PF = 0.85 Modulation = 1 3 phase modulation In 7th gen. IGBT module, the power loss is reduced by 15%. C-140917-01 18 3.4. Summary Package technologies New Compact and Light weight package 50% reduction of internal thermal resistance 3 times higher thermal cycle capability or more 30% reduction of package inductance Chip technologies 30% reduction of Qrr-VF trade-off 15% reduction of total loss in inverter operation High performance in a Compact and Light weight module. C-140917-01 19 19 Thank you for your kind attention! C-140917-01 20 Innovative Power Devices for a Sustainable Future C-140917-01 21 C-140917-01 22
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