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6th and 7th Generation IGBT Module for Industrial

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th
6
th
7
and
Generation IGBT Module
for Industrial Applications
Mitsubishi Electric Corporation
T.Radke K.Masuda
C-140917-01
1
Outline
1. Background
2. 6th generation IGBT module
2.1 Thermal resistance
2.2 ∆Tj-c Performance Benchmark
2.3 Chip comparison between 6th and 6.1th
3. 7th generation IGBT module
3.1 Package technologies
3.2 Chip technologies
3.3 Power Loss
3.4 Summary
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1. Background
■Industrial applications
Motor control
IGBT module
Medical device
Renewable power generation
UPS
Robotics
Lift
Common requirements are “High reliability”, “Low loss”,
“Compact” and “Lightweight”.
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2. 6th generation IGBT module
■Package type NX-Series
■Features
Feature
・Low Rth(j-c) by AlN isolation
・2 types of chip technologies
appling 6th gen. and 6.1th gen. chip
・Tjmax=175degC
・Low gate capacitance
■Package type MPD, S-Series
140mm
62mm
130mm
80mm
150mm
166mm
80mm
110mm
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2.1 Thermal resistance
Specific thermal resistance
of the substrate (normalized)
800%
Structure of IGBT module
IGBT chip
Solder
Cu pattern
700%
700%
600%
500%
Substrate
400%
300%
200%
100%
0%
Cu layer
Solder
100%
AlN
Al2O3
Cu base plate
Mitsubishi
Gen.  AlN
Conventional module Al2O3
6th
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Module Rating
6th Gen.
Rth(j-c)Q
Al2O3Module
Rth(j-c)Q
Al2O3 Module is x
% Higher
100A / 1200V CIB
0.20 K/W
0.29K/W
+45%
150A / 1200V (6in1)
0.013 K/W
0.02 K/W
+54%
450A /1200V (2in1)
0.044 K/W
0.066 K/W
+50%
5
2.2 ∆Tj-c Performance Benchmark
6th gen. IGBT Module
Conventional Al2O3 Module A
Conventional Al2O3 Module B
ΔTj-c=35℃(Tcase=115℃, Tj=150℃) , fc=5kHz , cos(φ)=0.8 , VCC=600V , m=0.9
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2.3 Chip comparison between 6th and 6.1th
structure
6.1th Gen.
no change
Termination
IGBT
6th Gen.
Diode
Shrinking
Err is reduced
CM450DX-24S(6th gen.)
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Condition : VCC=600V, Ic=450A, VGE=+15/-15V, RG=0Ω, Tj=150℃
CM450DX-24S1(6.1th gen.)
7
2.3 Diode Chip trade-off
Err vs. VF trade-off
Err [mJ]
60
50
6.1th gen.
CM450DX-24S1
40
6th gen. CM450DX-24S
30
Conventional
Company I Module A
14% Err
reduction
20
Company
F Module B
Conventional
10
(datasheet values @ IC=450A VCC=600V Tj=150°C)
0
0
0.5
1
1.5
2
2.5
VF [V]
6.1th gen. diode trade-off is optimized for lower switching losses
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2. 6th generation IGBT module
■6th gen. IGBT module
1.Package technologies
Low Rth(j-c) by AlN isolation
→High power capability compared with Al2O3 module.
→Same ΔTj as Al2O3 module by 55% more power @600A
2. Chip technologies
→6.1th is optimized for high fc application
•
•
Package optimization
Chip technology improvement
7th gen. IGBT module
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3. 7th generation IGBT module
■Concept of 7th gen. IGBT module
Package
IGBT
・High reliability
・Low inductance
・Compact
・Lightweight
・Low VCEsat
・Low Eoff
Diode
・Low VF
・Low Qrr (=Low Eon + Err)
・Suppress snap-off recovery
High reliability, Low losses, Compact and Lightweight.
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3.1.1 Substrate
※PC-TIM: Phase Change – Thermal Interface Matrial
■Thermal resistance
Heat dissipation simulation
Thermal resistance simulation
1.2
Condition: Ta=25 ℃, U=800 W/m2・K, Same chip size.
Condition: Same chip size.
85
Rth (Ratio)
1.0
63
0.8
0.6
0.66
Half
0.4
0.2
0.0
0.34
40
Chip
AlN
Base plate
Grease
Rth(j-c)
0.34
0.30
6th gen.
+ Grease
7th gen.
+ PC-TIM
Rth(c-s)
6th gen.
Si3N4
PCTIM
7th gen.
The Internal thermal resistance of the 7th gen. is a half of the 6th gen.
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3.1.1 Substrate
■Experimental result
SAT pictures before and after thermal cycling test (-40~125℃)
Conventional structure
Before test
After 300cyc.
7th gen. structure
Before test
After 1000cyc.
Corner of Cu pattern
No crack had been observed until 1000cyc., which is
3 times larger.
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3.1.2 Main terminal
■Package inductance
6th generation
7th generation
US bonding
laminate area
By using laminated main terminals, package inductance
is reduced by 30%.
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3.1.3 Results
■1200V/600A, dual
6th generation
Item
7th generation
6th gen.
7th gen.
Thermal resistance (Ratio)
1
0.5
Reduction of 50%
Thermal cycling (Ratio)
1
3~
Increasing 3 times
Inductance (Ratio)
1
0.7
Reduction of 30%
Package size (W*D*H)
Weight
110×80×29 mm
580 g
Improvement
108×62×30mm Reduction of 20%
320 g
Reduction of 45%
New compact and lightweight package is realized.
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3.2 Chip technologies
3.2.1 IGBT chip
Key point
■Cross section structure
1. Thin N- drift layer
Low VCEsat
Low Eoff
2. Optimized cell design
easier controllability of dV/dt by Rg
7th gen.
dV/dt [kV/μs] (MAX)
6th/6.1th gen.
Rg [Ω]
7th gen. IGBT has better static and dynamic characteristics.
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3.2.1 IGBT chip
■Experimental result
3.5
JC vs. VCEsat
JC vs. Eoff
Condition:
Condition:TTj=125℃
a=125 ℃
Condition:VCC
Vcc=600V,
Condition:
=600 V, TTj=125℃
a=125 ℃
35
3.0
30
6th gen.
25
2.0
20
7th gen.
1.5
15
10
1.0
7th gen.
5
0.5
0
6th gen.
Eoff [mJ]
VCEsat [V]
2.5
0
100
200
300
JC [A/cm2]
400
500
0
0
100
200
300
400
500
JC [A/cm2]
The 7th gen. IGBT has the better VCEsat and Eoff.
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3.2.2 Diode chip
■Cross section structures
6th gen.: N buffer diode
7th gen.: RFC diode
※RFC - diode: Relaxed Field of Cathode - diode
Key point
1. Thinner N drift layer
Low VF
Low Qrr  Low (Err + Eon)
2. N+/P cathode structure
Suppress snap-off recovery
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3.3 Power Loss
■Power loss simulation
Condition: fc=10 kHz, dv/dt =10 kV/μs, VCC=600 V, Tj=125 ℃, Same chip size
15% reduction
PF = 0.85
Modulation = 1
3 phase modulation
In 7th gen. IGBT module, the power loss is reduced by 15%.
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3.4. Summary
Package technologies
New Compact and Light weight package
50% reduction of internal thermal resistance
3 times higher thermal cycle capability or more
30% reduction of package inductance
Chip technologies
30% reduction of Qrr-VF trade-off
15% reduction of total loss in inverter operation
High performance in a Compact and Light weight module.
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Thank you for your kind attention!
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Innovative Power Devices
for a Sustainable Future
C-140917-01
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