gan power

Global GaN Power Device Market - Trends and Forecast
to 2025
Gallium nitride (GaN) compound is a hard semiconductor material featuring a wide band gap
(energy gap) of 3.4 electronvolts (eV) with high heat capacity and thermal conductivity. GaN
finds significant applications in power devices used in electrical energy control systems and
conversions including telecommunication, industrial, automotive, and high RF antennas and
radar in aerospace and defense technologies are expected to provide opportunities for growth
of the GaN market over the forecast period.
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High energy efficiency loss in power devices is primarily attributed to conduction losses due
to high device resistance and switching transitions. GaN materials prevent such energy loss,
as they are featured with high breakdown voltage and low conduction resistance, in turn
enabling high-speed switching operations. GaN thus is used to ensure high efficiency of
operations in electrical systems. Moreover, low conduction resistance of GaN, allows the
material compound to sustain high energy application in compact sizes, enabling higher
miniaturization of the circuits. These significant benefits of GaN over other alternatives such
as silicon transistors that feature relatively larger chip area to enhance their conductivity, are
expected to fuel the overall GaN power device market.
Substantial growth of end-use verticals is expected to boost market growth
Advancements in technology related to GaN power devices are enhancing the computational
power of all systems, in turn boosting market growth. For instance, in December 2017, Yuji
Zhao, an electrical and computer expert from Arizona State University received a three year
grant of US$ 750,000 from National Aeronautics and Space Administration’s (NASA) Hot
Operating Temperature Technology (HOTTech) program for the gallium nitride processor for
applications in space. In January 2018, Corsair introduced Corsair AX1600i featuring off-the
shelf efficiency, ripple suppression, noise levels, voltage regulation, and highly compact
power supply unit. These two instances of technological developments are primarily based on
the utilization of Gallium Nitride based materials. replacing Silicon transistors as prominently
used material in the switching devices.
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The recent past has witness high proliferation of electric vehicles and increasing adoption of
electrical and electronic components in internal combustion engines for enhanced and
convenient control among users. According to Coherent Market Insights, vehicle
electrification technologies are expected to witness a CAGR of over 8.8% over the forecast
period and be valued at over US$ 120 billion by 2025. Increasing adoption of autonomous
vehicles is expected to increase the demand for efficient communication systems featuring
high frequency bandwidth and robust operations. This in turn, is expected to fuel growth of
the market for GaN power devices in the near future.
High cost of systems featuring integration of gallium nitride components due to capital
intensive nature of materials and manufacturing procedures is expected to hamper growth of
the market. Moreover, GaAs components are widely used in small signal Monolithic
Microwave Integrated Circuit (MMIC) and low noise amplifier (LNA). Application of
gallium nitride semiconductor is projected to become mainstream component, though it will
require considerable time owing to the cost factor and thus, is among the prominent growth
challenges.
Asia Pacific accounts for the largest population base and is also the largest market for key
end-use industries, in turn, contributing to the largest consumer base of GaN power devices.
According to Coherent Market Insights’ analysis, China and India contribute to around 35%
of the global population base. Moreover, largest consumer base for automotive, consumer
electronics, communication, and industrial manufacturing will provide the strongest growth
prospects over the forecast period.
Some of the key players in the GaN power devices market are Cree Inc., Efficient Power
Conversion (EPC) Corporation, Infineon Technologies, GaN Systems Inc., Macom,
Microsemi Corporation, Mitsubishi Electric Corporation, Navitas Semiconductor, Qorvo,
Inc., and Toshiba Electronic Devices & Storage Corporation.
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Increasing demand for GaN power devices in the defense industry for applications such as radar, communications, and electronic warfare is in turn, expected to boost growth of the GaN power devices market over the forecast period.

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