Agenda
Asia Pacific Regional Update
FRAM Technology Update
4Mb Product Highlights
Overview of 130 nm FRAM technology
Comparison to other Technologies
Product Status
Ramtron Asia Pacific Grows
2001
• Ramtron Asia established February 2001 in Hong Kong.
2004
• Ramtron APC establishes Ramtron China with country manager based in
Shenzhen.
• Ramtron establishes Ramtron Korea with country manager based in Seoul.
• Focuses on establishing strong distribution network, expanding customer base
and tier-1 accounts.
2005
• Ramtron APC adds customer service function.
• Ramtron China expands Shenzhen office and establishes Shanghai-based
sales engineer.
• Shanghai focuses on metering, industrial, telecommunication, and automotive
manufacturers in the Yangtze River Delta region.
2006
• Ramtron Taiwan established.
• Ramtron China further expands in Beijing and adds first applications support
based in Shenzhen.
2007
Q1
• Korean sales team expanded.
• Ramtron APC adds Asia Pacific strategic marketing manager based in Taiwan.
• Ramtron China adds customer service function.
2007 and Beyond
•
• Establish Ramtron India sales team.
• Establish China-based reference design center.
• Expand Ramtron China to Chengdu, Xian and
Wuhan.
• Expand Ramtron Taiwan to Hsinchu and
Taichung.
Business Facts
• Ramtron Asia Pacific regional sales grew 99% annually from
2001 to 2006.
• Primarily driven by metering, POS terminals, gaming, automotive and
RAID applications.
• Ramtron APC makes significant investments to expand its
presence in China, Hong Kong, Taiwan, and Korea.
• Sales in Taiwan grew 34% from 2005 to 2006, primarily driven by
sales to RAID controller manufacturers.
• Sales in China grew 36% from 2005 to 2006, dominated by
metering, POS terminals, and automotive applications.
• China represents two-thirds of all sales in the Ramtron APC region.
• Sales in Korea grew 82% from 2005 to 2006, driven primarily by
automotive applications.
• Ramtron APC has the widest customer base of all Ramtron
regions combined, with over 700+ mass production customers and
4,000+ sampled customers.
• Most active design-in region of all Ramtron sales territories.
FRAM Applications
Metering
+T&D
Digital
Tachograph
Tax
Declaring
POS
ISM
Consume
r
RAID
Gaming
Automotive
Communication
MFP
China
48%
17%
11%
16%
1%
0%
2%
5%
0%
0%
Korea
17%
0%
0%
9%
10%
0%
0%
61%
4%
0%
Taiwan
6%
5%
0%
20%
0%
37%
18%
1%
10%
3%
41.70%
11.66%
7.14%
7.14%
2.05%
4.65
%
3.56%
12.78%
1.87%
0.38%
AP
A u t om ot iv e
13%
Com m u n ica t ion
2%
MFP
0%
Ga m in g
4%
Met er in g + T &D
41%
RA ID
5%
Con su m er
2%
ISM
14%
T a x decla r in g POS
7%
Dig it a l T a ch og r a ph
12%
Automotive
Navigation, Car DVD, Airbag ECU,
Taximeters
Metering + T&D
Energy meters, AMR, T&D SCADA
ISM
DVR, access controls, CNC, PLC,
Robotics, Oximeter, Industrial PCs,
Bill Acceptor, etc.
Consumer
LCD TV, STB, Home Automation
Appliances.
Communication
DSLAM, RF Repeaters, Network
Switches, etc.
Game
Arcade Game Machines, Slot Machines,
etc.
2007 Ramtron AP Distribution Network
• Polar Star
• Shenzhen Huazhou
• Sundial International
• New China Dragon
• Skysoon Communication
Korea
Beijing
Shanghai
CHINA
Wuhan
• Selko Elec.
• T&M System
• I&C Microsystem
Silicon Max
• •Sim
Communication
• Sechang Semicom
Fuzhou
Taiwan
Shenzhen
• Neolec
• Sonet
• AXcel
• Pernas Enterprise
• WinChief
Hong Kong
Chengdu
Thailand
Bangkok
India
Bangalore
Bombay
Malaysia
• E-Smart
• Plexus
Components
• Excel Eltech
Kula Lumpur
Singapore
• Serial Micro
• Nucleus
Philippines
Product Seminars
• Ramtron China to hold
first Product Seminar
Tour in April 2007, in
five cities
• 500+ already
registered with more
expected
What is FRAM?
Leading next generation nonvolatile memory
Next generation memories include FRAM, MRAM, PRAM
all are nonvolatile RAM
Nonvolatile RAM
•
•
•
•
Fast write speed, like RAM rather than Flash
High endurance – does not wear out in the system
Low power consumption – no high voltages needed
Not all next generation memory technologies meet all criteria
Ferroelectric Memory Operation
FRAM advantages come from unique data storage mechanism
Fast write
Very high write
endurance
Low Power
Consumption
Technology Timeline
1984
Ramtron founded for basic ferroelectric R&D
1992
Ramtron opens 1st ferroelectric fab on line at 1.0mm
1993
Introduction of first commercial FRAM product 512x8
1998
First FRAM foundry Rohm Electronics at 0.8mm (now closed)
1999
Ramtron becomes fabless
2000
Fujitsu establishes 0.5mm FRAM production
2001
Ramtron begins collaboration with Texas Instruments
2003
Fujitsu establishes 0.35mm FRAM production
2005
Ramtron introduces 1Mb FRAM
2007
Texas Instruments establishes 130 nm FRAM production
Ramtron introduces first 4Mb FRAM production
Ramtron FRAM Shipments
Over 150 million parts shipped
45
40
35
30
Mu
25
20
15
10
5
0
2002
2003
2004
2005
2006
Recent Product Developments
2004 First Automotive AEC-Q100-qualification
2005 Introduction first 1Mb product
2006 First Automotive +125C grade product, AEC Q100
Outgoing quality level 2 ppm based on returns
FM22L16 4Mb FRAM
Key Features
Organization: 256Kb x 16
Speed: 55 ns access time
110 ns cycle time
3.3V Operation
Industrial temperature range -40C to +85C
Asynchronous SRAM-like controls
Standard SRAM pin out
High speed page mode
A4
A3
A2
A1
A0
CE
DQ0
DQ1
DQ2
DQ3
VDD
VSS
DQ4
DQ5
DQ6
DQ7
WE
A17
A16
A15
A14
A13
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
TSOP44 type II
A5
A6
A7
OE
UB
LB
DQ15
DQ14
DQ13
DQ12
VSS
VDD
DQ11
DQ10
DQ9
DQ8
/ZZ
A8
A9
A10
A11
A12
Advanced Memory Cell
Word Line
Bit Line
Cell Size 23F2
Cell Area 0.71 mm2
Ferroelectric
Capacitor
Plate Line
“Stacked Cell”
Capacitor over plug
4Mb Array 130 nm Process
5 layer copper process
2 mask adder for FRAM ideal for embedded products
Core voltage 1.6V
Some FRAM Legends
FRAM has been maturing for a long time. Much that is written about it is outdated
Legend
Updated Information
Limited
endurance
Many parts are specified unlimited, most exceed realistic
system lifetimes
Future
scalability
130 nm is most advanced NVRAM node as of 2007.
4 years to move from 0.35mm to 130 nm is reasonable
Low Voltage
4Mb operates with 1.6V core voltage. Native 1.8V products
planned
Cell size
0.71mm is smallest next generation memory cell in production
Reliability
Over 150Mu shipped with excellent field history. Automotive
qualified
Technology Comparison
FRAM
FLASH
BBSRAM
MRAM
PRAM
Mature
Commercially
Available
?
Fast Write
?
High Write
Endurance
Low Power
“Green”
Prevents Sudden
Data Loss
Field Reliability
Price
?
22L16 Product Status
Alpha samples 1Q07
Full engineering samples 2Q07
Qualification & mass production 4Q07
Follow-on Products
FM25H20 2Mb SPI 3.3V
– Engineering samples 2Q ’07
– Mass Production 1Q ‘08
1.8V 2Mb & 4Mb planned
– 2008 schedule
130 nm FRAM Process is capable of larger memories
– 8 and 16 Mb under evaluation