Single Event Burnout testing of high
power Schottky diodes
Presented by Pierre GARCIA
Enoal LE GOULVEN, Fabien WIDMER, Athina VAROTSOU
with the support of Cesar BOATELLA-POLO
Contract No 4000118250
ESA/CNES March 2017
TRAD, Tests & Radiations
Introduction
This project at a glance :
 40h of beam
 Around 270 Runs
 20 references tested
 Around 100 parts irradiated
ESA/CNES March 2017
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TRAD, Tests & Radiations
Introduction
 Silicon Schottky diodes have been traditionally
considered immune to destructive SEE
 Recent works published on literature have shown
that silicon power Schottky diodes may be
sensitive to destructive events while reverse
biased under heavy ion irradiation
 This activity consists of performing SEB test
under heavy ions on 20 different references of 7
different manufacturers
 For this study parts were provided by
STMicroelectronics, Thales Alenia Space and
Airbus Defence and Space
ESA/CNES March 2017
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TRAD, Tests & Radiations
Previous campaign 2015
QPL product
New generation prototype
ESA/CNES March 2017
4
TRAD, Tests & Radiations
Results
STMicroeletronics
Irradiation performed at Ganil
STPS20100 (QPL)
STPS1045 (QPL)
STPS6045 (QPL)
STPS40100 (QPL)
STPS3045 (NEW)
STPS20200 (NEW)
STPS61170C (NEW)
STPS40H100 (NEW)
*2 parts pass 75%
**Not tested
Xe (LET=61.02MeV.cm²/mg) Kr (LET=27.18MeV.cm²/mg)
Failed
Failed
PIST
PIST
Ok
Fail
Ok
Fail
75%
80%
100%
100%
100%
75%
70%*
75%
100%
< 50%**
50%
78%
78%
100%
50%
75%
75%
100%
40%
50%
76%
44%
59%
50%
65%
80%
75%
100%
•All QPL parts considered PASS at 75%
•These parts are used on space mission at 75% maximum Vr
•New prototypes are considerably more sensitive to SEB
Fail : IR > IR @ VRRM Number XX% : Value of
PASS: IR < IR @ VRRM the % of VRMAX
ESA/CNES March 2017
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TRAD, Tests & Radiations
Previous campaign Results
Focus on STM Schottky diode result
Two different failure signature were observed on the during
the first GANIL campaign. Current step was the most
common.
Ir degradation with fluence was only observed in some of
the new prototypes.
ESA/CNES March 2017
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TRAD, Tests & Radiations
Parts information 1/2
Diode
Type
SiC
Package
VRRM
(V)
Number
of sample
STPS3045XF54S02Y
Schottky
no
SMD 05
45V
10
STPS80H100
Schottky
no
SMD 1
100V
10
STPS30170XZ04P029
Schottky
no
SMD 05
170V
10
STTH60400
Ultrafast
no
STTH61W04CSA1
(equivalent
STTH60400)
Ultrafast
no
STPSC1006
Schottky
STPS40M60CR
Reference
Manufacturer
8
SMD 1
400V
yes
TO-220-2
600V
13
Schottky
no
TO-220-3
60V
15
STPSC10H065
Schottky
yes
TO-220-2
650V
11
STPS4045CW
Schottky
no
TO-247-3
45V
11
STPS5H100BY
Schottky
no
DPACK
100V
5
ESA/CNES March 2017
STMicroelectronics
7
2
TRAD, Tests & Radiations
Parts information 2/2
Reference
Diode
Type
SiC
Package
VRRM
(V)*
Number
of sample
35CGQ100
Schottky
no
TO-254
100V*
15
45CKQ100
Schottky
no
TO-258
100V
5
120LQ100
Schottky
no
SMD-1
100V*
12
HFB25HJ20
Ultrafast
no
SMD.5
200V
5
80CLQ150
Schottky
no
SMD-1
150V*
11
SML10SIC06SMD5
Schottky
SMD.5
600V
6
MBRB8H100T4G
Schottky
no
D²PACK
100V
6
BAS21LTG1
Fast
Switching
no
On
Semiconductor
SOT23
250V
5
1N6817
Schottky
no
Microsemi
ThinKey™
2
100V*
9
SHDC124545P
Schottky
no
Sensitron
Semiconductor
TO-258
150V*
12
ESA/CNES March 2017
yes
Manufacturer
International
Rectifier
SemeLAB
Limited
8
TRAD, Tests & Radiations
Test procedure and setup
Irradiation performed at UCL
PASS
PASS
IR>IRMax
FAIL
FAIL
 PIST (Post-Irradiation STress) Test : After the irradiation, a stress is
applied to the diode in order to reveal any latent damage on the
irradiated devices.
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TRAD, Tests & Radiations
Test procedure and setup
STATUS CRITERIA
 SEB / Fail: abrupt leak of Ir during irradiation
|Ir| > IR (@VRRM)
 Failed PIST: abrupt leak of Ir during stress test
|Ir| > IR (@VRRM)
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TRAD, Tests & Radiations
SEE tests: Beam description
Irradiation facility: U.C.L.
IRRADIATION BEAM CHARACTERISTICS
Heavy Ions used :
Ions used:
124Xe35+ (62.5 MeV.cm²/mg),
83Kr25+ (LET=32.4MeV.cm²/mg),
53Cr16+ (LET=16MeV.cm²/mg),
27Al8+ (LET=5.7MeV.cm²/mg )
Fluence: 1.107 cm-2 (in two steps 1.106 and 9.106 cm-2) for Si
Fluence: 3.105 cm-2 for silicon carbide diode
ESA/CNES March 2017
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TRAD, Tests & Radiations
Results
The derated accepted is 75% of @VRMax
International
Rectifier
STMicroeletronics
STTH60400
STPS3045
STPS4045CW
STPS30170
STPS40M60CR
STPS80H100
STPS5H100BY
STPSC10H065*
STPSC1006*
45CKQ100
35CGQ100
HFB25HJ20
120LQ100
80CLQ150
BAS21LTG1
On semi
MBRB8H100T4G
Semelab SML10SIC06SMD5*
diodes inc. 1N4148WQ
Microsemi 1N6817
Sensitron SHDC124545P
Xe (LET=62.5MeV.cm²/mg)
Failed
PIST
Ok
Fail
100%
75%
56%
75%
50%
75%
100%
50%
75%
75%
100%
100%
75%
75%
75%
100%
75%
75%
Kr (LET=32.4MeV.cm²/mg)
Failed
PIST
Ok
Fail
75%
75%
75%
75%
57%
50%
93%
86%
33%
50%
Cr (LET=16MeV.cm²/mg)
Failed
PIST
Ok
Fail
Al (LET=5.7MeV.cm²/mg )
Failed
PIST
Ok
Fail
66%
69%
100%
93%
100%
93%
100%
100%
100%
100%
29%
100%
58%
42%
100%
75%
100%
* Silicone carbide diode
Fail : IR > IR @ VRRM Number XX% : Value of
PASS: IR < IR @ VRRM the % of VRMAX
ESA/CNES March 2017
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TRAD, Tests & Radiations
Results
International
Rectifier
STMicroeletronics
STTH60400
STPS3045
STPS4045CW
STPS30170
STPS40M60CR
STPS80H100
STPS5H100BY
STPSC10H065*
STPSC1006*
45CKQ100
35CGQ100
HFB25HJ20
120LQ100
80CLQ150
BAS21LTG1
On semi
MBRB8H100T4G
Semelab SML10SIC06SMD5*
diodes inc. 1N4148WQ
Microsemi 1N6817
Sensitron SHDC124545P
Xe (LET=62.5MeV.cm²/mg)
Failed
PIST
Ok
Fail
100%
75%
56%
75%
50%
75%
100%
50%
75%
75%
75%
Kr (LET=32.4MeV.cm²/mg)
Failed
PIST
Ok
Fail
75%
75%
75%
75%
57%
50%
93%
86%
33%
50%
Cr (LET=16MeV.cm²/mg)
Failed
PIST
Ok
Fail
Al (LET=5.7MeV.cm²/mg )
Failed
PIST
Ok
Fail
PART could be FAIL but not
necessary not functional
100%
100%
75%
75%
75%
100%
75%
66%
69%
100%
93%
100%
93%
100%
100%
100%
29%
100%
58%
42%
100%
75%
100%
* Silicone carbide diode
Fail : IR > IR @ VRRM
PASS: IR < IR @ VRRM
ESA/CNES March 2017
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TRAD, Tests & Radiations
100%
STMicroeletronics
STMicroelectronics Results
STTH60400
STPS3045
STPS4045CW
STPS30170
STPS40M60CR
STPS80H100
STPS5H100BY
STPSC10H065*
STPSC1006*
Xe (LET=62.5MeV.cm²/mg)
Failed
PIST
Ok
Fail
100%
75%
56%
75%
50%
75%
100%
50%
75%
75%
75%
Kr (LET=32.4MeV.cm²/mg)
Failed
PIST
Ok
Fail
75%
75%
75%
75%
57%
50%
93%
86%
Cr (LET=16MeV.cm²/mg)
Failed
PIST
Ok
Fail
Al (LET=5.7MeV.cm²/mg )
Failed
PIST
Ok
Fail
66%
69%
100%
93%
100%
93%
100%
* Silicone carbide diode
 2 references Fail after a PIST due to a degradation of the leakage current
(for the example IRmax respectively equal to 3.5µA and 20µA)
ESA/CNES March 2017
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TRAD, Tests & Radiations
STMicroeletronics
STMicroelectronics Results
STTH60400
STPS3045
STPS4045CW
STPS30170
STPS40M60CR
STPS80H100
STPS5H100BY
STPSC10H065*
STPSC1006*
Xe (LET=62.5MeV.cm²/mg)
Failed
PIST
Ok
Fail
100%
75%
56%
75%
50%
75%
100%
50%
75%
75%
75%
Kr (LET=32.4MeV.cm²/mg)
Failed
PIST
Ok
Fail
75%
75%
75%
75%
57%
50%
93%
86%
Cr (LET=16MeV.cm²/mg)
Failed
PIST
Ok
Fail
Al (LET=5.7MeV.cm²/mg )
Failed
PIST
Ok
Fail
66%
69%
100%
93%
100%
93%
100%
* Silicone carbide diode
 2 references Fail after a PIST due to a degradation of the leakage current
(for the example IRmax respectively equal to 3.5µA and 20µA)
Parts still
functional but
out of criteria
IRmax = 20µA
IRmax = 3.5µA
ESA/CNES March 2017
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TRAD, Tests & Radiations
Results
International
Rectifier
STMicroeletronics
STTH60400
STPS3045
STPS4045CW
STPS30170
STPS40M60CR
STPS80H100
STPS5H100BY
STPSC10H065*
STPSC1006*
45CKQ100
35CGQ100
HFB25HJ20
120LQ100
80CLQ150
BAS21LTG1
On semi
MBRB8H100T4G
Semelab SML10SIC06SMD5*
diodes inc. 1N4148WQ
Microsemi 1N6817
Sensitron SHDC124545P
Xe (LET=62.5MeV.cm²/mg)
Failed
PIST
Ok
Fail
100%
75%
56%
75%
50%
75%
100%
50%
75%
75%
100%
100%
75%
75%
75%
100%
75%
75%
Kr (LET=32.4MeV.cm²/mg)
Failed
PIST
Ok
Fail
75%
75%
75%
75%
57%
50%
93%
86%
33%
50%
Cr (LET=16MeV.cm²/mg)
Failed
PIST
Ok
Fail
Al (LET=5.7MeV.cm²/mg )
Failed
PIST
Ok
Fail
66%
69%
100%
93%
100%
93%
100%
100%
100%
29%
100%
58%
42%
100%
75%
100%
* Silicone carbide diode
ESA/CNES March 2017
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TRAD, Tests & Radiations
100%
Internal Rectifier Results
Focus on IR Schottky diode result
ESA/CNES March 2017
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TRAD, Tests & Radiations
Results
Focus on IR Schottky diode result
PARTS are still functional
ESA/CNES March 2017
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TRAD, Tests & Radiations
Results
International
Rectifier
STMicroeletronics
STTH60400
STPS3045
STPS4045CW
STPS30170
STPS40M60CR
STPS80H100
STPS5H100BY
STPSC10H065*
STPSC1006*
45CKQ100
35CGQ100
HFB25HJ20
120LQ100
80CLQ150
BAS21LTG1
On semi
MBRB8H100T4G
Semelab SML10SIC06SMD5*
diodes inc. 1N4148WQ
Microsemi 1N6817
Sensitron SHDC124545P
Xe (LET=62.5MeV.cm²/mg)
Failed
PIST
Ok
Fail
100%
75%
56%
75%
50%
75%
100%
50%
75%
75%
100%
100%
75%
75%
75%
100%
75%
75%
Kr (LET=32.4MeV.cm²/mg)
Failed
PIST
Ok
Fail
75%
75%
75%
75%
57%
50%
93%
86%
33%
50%
Cr (LET=16MeV.cm²/mg)
Failed
PIST
Ok
Fail
Al (LET=5.7MeV.cm²/mg )
Failed
PIST
Ok
Fail
66%
69%
100%
93%
100%
93%
100%
100%
100%
100%
29%
100%
58%
42%
100%
75%
100%
* Silicone carbide diode : No information on literature about
the sensitivity of SiC diode
SiC diodes are most sensitive to destructive event
ESA/CNES March 2017
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TRAD, Tests & Radiations
Results
Focus on SiC Schottky diode result
Degradation by
step was also
observed
ESA/CNES March 2017
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TRAD, Tests & Radiations
Results
Focus on SiC Schottky diode result
Abrupt degradation
of the leakage
current has been
observed too
ESA/CNES March 2017
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TRAD, Tests & Radiations
Results
Focus on SiC Schottky diode result
Increase of leakage
current is directly
proportional to the
fluence and flux
These signatures were observed for the 3 references of SiC
diode.
ESA/CNES March 2017
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TRAD, Tests & Radiations
CONCLUSION
 11 of the 20 references tested are
degraded due to heavy ions irradiation
 SiC diode technology is more sensitive
than Si diode technology
 More investigation on SiC diode have to
be performed in order to understand the
different phenomenon observed
ESA/CNES March 2017
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TRAD, Tests & Radiations
TRAD
Thank you for your attention,
any question ?
?
TRAD Gamma irradiation facility GAMRAY is accredited in compliance with
ISO/IEC 17025 standard under n°1-6110 for gamma irradiation, dose deposit.
ESA/CNES March 2017
TRAD, Tests & Radiations
Results
Focus on SiC Schottky diode result
 This increase of leakage
current is directly
proportional to the
fluence and flux
 Signatures observed on
the 3 SiC reference
ESA/CNES March 2017
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TRAD, Tests & Radiations