Ｄｉａｘ Ｉｎｃ．
Ｔｈｅｒｍａｌ Ｄｉｓｓｉｐａｔｉｏｎ ｏｆ Ｍｉｃｒｏｗａｖｅ Ｐｏｗｅｒ Ｄｅｖｉｃｅ
Improvements
IM-type Power Device
Item
Current
Improvement
Die Bond
AuSn eutectic solder
Thermal Conductivity=57w/mK
Thickness∼20μｍ
Sintered Ag
Thermal Conductivity∼265w/mK
Thickness∼10-20μｍ
Chips
Cu Base Metal, available！
Metal
Base
Ａ
Cu/Mo/Cu
Thermal Conductivity=
200-300w/mK
Ｂ
Metal Base
Thermal Conductivity
=330-390w/mK
Cu-dia、Al-dia composite metal
Thermal Conductivity∼550w/mK
Easy and Simpe Assembly
Process
Ag nano particle
paste printing ,
Flat Base Metal
Parts Moent
Non-IM type Power Device
Ceramic frame
Mount
Sintering
・200℃-250℃
・Die Bonf without
Pressure
・Frame with Pressure
Ｄｉａｘ Ｉｎｃ．
Thermal Dissipation of Package Base Metal
Case-A：Medium Power GaN HEMT(A maker)
評価サンプル、評価法
● Cu(T.C=390w/mK)
● Cu-dia composite metal(550w/mK)
Tｃｈ （℃）
(Channel temp.)
(IR scope)
@Pdc=20w
Package Base Metal
・Cu(390w/mK)
・Cu-dia composite
metal(550w/mK)
(Package Flange Temp.)
Tf （℃）
Case-C：Medium Power GaN HEMT(C maker）
● Cu(T.C=390w/mK)
● Cu-dia composite metal(550w/mK)
● Cu(T.C=390w/mK)
● Cu-dia composite metal(550w/mK)
Tｃｈ （℃）
Tｃｈ （℃）
Case-B：Medium Power GaN HEMT(B maker)
@Pdc=15w
Tf （℃）
@Pdc=20w
Tf （℃）
Thermal Dissipation Effect of Die Bond and Base Metal
Superiority of Sintered Ag
Thermal Dissipation Effect of Flat Base Metal
Medium Power GaN HEMT
@Pdc=20w
● AuSn
● Sintered Ag
○ Base Metal with stem
○ Flat Base Metal
Tｃｈ （℃）
Tｃｈ （℃）
Medium Power GaN HEMT
@Pdc=20w
Ｄｉａｘ Ｉｎｃ．
●
Tf （℃）
Tf （℃）：Package Flange Temp.
Bond Material
AuSn(Au:80%)
Sintered Ag
Material
preform solder
Ag nano particle paste
dispensing,、screen printing
Ass’ly Temp.
300℃
200℃-250℃
Thermal
Conductivity
57W/m・K
265W/m・K
Superirity of Sintered Ag
・Base Metal：OFHC(T.C
○
=390w/mK)
・Structure of stems
Thickness of Base Metal=1.5mm
○
・Cu-based metal(T.C=330w/mK)
・Low temp. assembly of all parts
(Thickness of Base Metal=1mm)
Low temperature assembly ⇒ Flat Cu base metal , available