650nm FP Laser diode - Xiamen Guang Te Communication

Xiamen Guang Te Communication Technology.Co.,Ltd
No.1628,Guankou road ,Guankou town,Jimei District,xiamen,China
Tel: 0086-592-5731282
Fax: 0086-592-5731283
[email protected]
[email protected]
650nm FP laser diode module (Receptacle)
Features
Applications
MQW 650nm FP Laser diode
Low threshold current
Wide temperature range operation
(Tc= -10 to+65°C)
Light Source
Data Transmit
Absolute Maximum Ratings
Parameter
LD Forward current
LD Reverse voltage
Symbol
IF(LD)
VR(LD)
Value
100
2
Unit
mA
V
PD Forward current
PD Reverse voltage
Operating temperature
IF(PD)
VR(PD)
TOP
2
25
mA
V
-10 ~ +65
-40 ~ +85
240/10
℃
℃
℃/S
Storage temperature
Soldering temperature/time
TST
-
Optical & electrical characteristics
Parameter
Output power
Symbol
Pout
Min.
Typ.
Max.
Unit
Test Conditions
0.2
1.0
--
mW
Iop=30mA
3.0
5.0
--
mW
Iop=90mA
8.0
10.0
---
mW
Iop=130mA
10.0
20.0
---
mW
Iop=170 mA
20.0
30.0
---
mW
Iop=180 mA
30.0
50.0
--
mW
Iop=200mA
50.0
60.0
---
mW
Iop=210 mA
Center wavelength
λ
640
650
660
nm
CW
Spectral width
Δλ
-
-
5
nm
CW
GT
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Xiamen Guang Te Communication Technology.Co.,Ltd
No.1628,Guankou road ,Guankou town,Jimei District,xiamen,China
Tel: 0086-592-5731282
Fax: 0086-592-5731283
[email protected]
[email protected]
Operating voltage
Vop
-
2.2
2.6
V
CW
Rise/ Fall time
Tr/Tf
-
-
0.5
ns
CW
Dimensions (mm) :
备注:我们提供 7 种结构。
结构有: SC 接口,FC 接口 (5 种尺寸),万能接口,万能螺纹接口(4 种尺寸)。
GT
Quality First ,Sharing together
www.xmgttx.com
Xiamen Guang Te Communication Technology.Co.,Ltd
No.1628,Guankou road ,Guankou town,Jimei District,xiamen,China
Tel: 0086-592-5731282
Fax: 0086-592-5731283
[email protected]
[email protected]
Pin Assignment:
Order Information:
GTLD
wavelength
Laser type
Wavelength
6:650nm
Laser Type
F: FP
Output Power
1:
0.2-1mW
Package
R: Receptacle
Connector
Pin Assignment
GT
5:
3-5mW
Output
power
Package
Connector
Pin
assignment
10:
8-10mW
20:
10-20mW
30:
20-30mW
50:
30-50mW
60:
50-60mW
5: FC(4A)
6: FC(4B)
7:UO
1:SC
2:FC(1)
3:FC(2)
4: FC(3)
8:UL(1)
9:UL(2)
10:UL(3)
11:UL(4)
6H: 650nm Pin assignment
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