Supplementary Material

SUPPLEMENTARY MATERIAL
Enhanced Photoelectric Performance of Composite Nanostructures
Combining Monolayer Graphene and a RbAg4I5 Film
Jun Yin 尹君,1,2 Yu Liu 刘宇,1,2 Jia-Lin Zhu 朱嘉麟,1,2 Zhanmin Dong 董占民
,1 Wanyun Ma 马万云,1,2,3,a) Wei Zhang 张伟,4,a) and Jia-Lin Sun 孙家林
1,2,3,a)
1Department
of Physics, Tsinghua University, Beijing 100084, P. R. China
2
State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, P. R.
China
3Collaborative
4Institute
a)
Innovation Center of Quantum Matter, Beijing, P. R. China
of Applied Physics and Computational Mathematics, P. O. Box 8009 (28), Beijing 100088, China
Author to whom
[email protected].
correspondence
should
be
addressed.
Electronic
1
mail:
[email protected];
[email protected];
Intensity [a.u.]
300
G-peak
2D-peak
200
100
0
1000
1500
2000
2500
3000
-1
Wavenumbers [cm ]
Photocurrent  [A]
FIG. S1. Raman spectrum of monolayer graphene on quartz substrate. The excitation source is
532 nm and 0.2 mW.
150
808 nm, 1233 mW
785 nm, 480 mW
532 nm, 246 mW
120
90
60
30
0
0.1
0.2
0.3
0.4
0.5
Bias U [V]
FIG. S2. Bias dependence of the photocurrent in the MLG/RbAg4I5 composite nanostructure
under various illumination conditions.
b
a
c
21.0
Time t [s]
21.5
Light on
190
19.5 20.0
20.5
21.0
Time t [s]
21.5
i
200
Light on
180
19.5 20.0
ti = 15.0 ms
80%
iv
220
ii
t = 620 ms
iii iii
20%
200
240
Light off
20%
t = 700 ms
iii iii
210
532 nm, 246 mW
260
80%
20.5
i
ti = 41.5 ms
80%
Light on
190
19.5 20.0
ii
20%
iv
20%
200
220
Light off
80%
t = 675 ms
iii iii
210
785 nm, 480 mW
230
Current  [A]
80%
i
ti = 38.0 ms
20%
20%
ii
80%
Current  [A]
220
Light off
Current  [A]
808 nm, 1233 mW
230
iv
20.5
21.0
21.5
Time t [s]
FIG. S3. Single-period photoelectric response curves of the MLG/RbAg4I5 composite
nanostructure under various laser illumination conditions for 100 ms, with the same conditions as
in Figure 2b: a) 808 nm, 1233 mW. b) 785 nm, 480 mW. c) 532 nm, 246 mW.
2
FIG. S4. Photoelectric response experiments in noncomposite nanostructures. Threedimensional schematic views of the (a) pristine monolayer graphene sample and (b) pure
RbAg4I5 film sample, along with pulsed laser for illumination and electrical connections for
measurements. Time-resolved photoelectric response curves for the (c) pristine monolayer
graphene sample and (d) pure RbAg4I5 film sample under various illumination conditions.
3
ii
Light off
250.0
249.8
Light on iii
5
10
iv
15
Light off
16.0
15.5
15.0
14.5
20
5
ii
i
Light on
10 15 20
Time t [s]
80%
i
iii
20%
250.2
532 nm, 246 mW
16.5
20%
532 nm, 246 mW
80%
250.4
b
Current  [nA]
Current  [A]
a
iv
25
30
Time t [s]
FIG. S5. Single-period photoelectric response curves under 532-nm illumination. a) Pristine
monolayer graphene sample. b) Pure RbAg4I5 film sample.
TABLE SI. Comparison of responsivity R in composite and noncomposite nanostructures under
various illumination wavelengths.
Samples
MLG/RbAg4I5a)
Pristine monolayer grapheneb)
Pure RbAg4I5 filmc)
R808 nm
R785 nm
R532 nm
0.05 mA W−1
0.10 mA W−1
1.2 mA W−1
0.5 μA W−1
0.9 μA W−1
3 μA W−1
3 nA W−1
2 nA W−1
4 nA W−1
a)
The responsivity of the MLG/RbAg4I5 composite nanostructure is equivalently calculated by R
= aλ × b × (hνλ – U0), for low light power; b,c) The responsivity of pristine monolayer graphene (b)
and pure RbAg4I5 film (c) is directly calculated by R =ΔI / P, regarding as what it is to be at low
power.
TABLE SII. Comparison of response time t in composite and noncomposite nanostructures
under illumination of 532 nm and 246 mW.
Samples
ti
tii
tiii
tiv
MLG/RbAg4I5
15 ms
85 ms
0.6 s
>1 s
Pristine monolayer graphene
0.2 s
0.8 s
0.4 s
>2 s
5s
5s
8s
>8 s
Pure RbAg4I5 film
4