xJ SiC Series | 60mW - 1200V SiC Cascode | UJC1206K
Datasheet
Description
CASE
D (2)
CASE
United Silicon Carbide's cascode products co-package its xJ series highperformance SiC JFETs with a cascode optimized MOSFET to produce the
only standard gate drive SiC device in the market today. This series
exhibits ultra-low gate charge, but also the best reverse recovery
characteristics of any device of similar ratings. These devices are
excellent for switching inductive loads, and any application requiring
standard gate drive.
G (1)
1 2 3
Features
S (3)
Part Number
Package
Marking
UJC1206K
TO-247-3L
UJC1206K
Typical Applications
w
Max. on-resistance RDS(on)max of 60mW
w
EV charging
w
w
PV inverters
w
Standard 12V gate drive
Maximum operating temperature of 150°C
w
Switch mode power supplies
w
Excellent reverse recovery
w
Power factor correction modules
w
Low gate charge
Low intrinsic capacitance
RoHS compliant
w
Motor drives
w
Induction heating
w
w
Maximum Ratings
Parameter
Test Conditions
Symbol
Drain-source voltage
VDS
Gate-source voltage
VGS
Value
Units
1200
V
DC
-20 to +20
V
TC = 25°C
38
A
TC = 100°C
24.5
A
Tj = 25°C
138
Tj = 150°C
88
Continuous drain current
ID
Pulsed drain current 1
IDM
Short-circuit withstand time 2
tSC
VGS=15V, VCC<600V
4
ms
Single pulsed avalanche energy 2
EAS
L=15mH, IAS =4.2A
143
mJ
Power dissipation
Ptot
TC = 25°C
192
W
TJ,max
150
°C
Operating and storage temperature
TJ, TSTG
-55 to 150
°C
Max. lead temperature for soldering,
1/8” from case for 5 Seconds
TL
250
°C
Maximum junction temperature
1
2
A
Pulse width tp limited by Tj,max
Starting TJ = 25°C
Preliminary, February 2017
1
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xJ SiC Series | 60mW - 1200V SiC Cascode | UJC1206K
Datasheet
Electrical Characteristics (TJ = +25°C unless otherwise specified)
Typical Performance - Static
Parameter
Drain-source breakdown voltage
Total drain leakage current
Total gate leakage current
Drain-source on-resistance
Gate threshold voltage
Gate resistance
Symbol
Test Conditions
BVDS
VGS=0V, ID=1mA
IDSS
IGSS
RDS(on)
Value
Min
1200
VDS = 1200V,
VGS = 0V, TJ = 25°C
Typ
Max
Units
V
110
800
mA
VDS = 1200V,
VGS = 0V, TJ = 150°C
VDS=0V, Tj=25°C,
VGS = -20V / +20V
VGS=12V, ID=20A,
TJ = 25°C
230
5
100
42
60
nA
mW
VGS=12V, ID=20A,
TJ = 150°C
98
VG(th)
VDS = 5V, ID = 10mA
RG
f = 1MHz, open drain
Symbol
Test Conditions
IS
TC = 25°C
38
A
IS,pulse
TC = 25°C
138
A
4
4.9
6
V
W
1.1
Typical Performance - Reverse Diode
Parameter
Diode continuous forward current
Diode pulse current 1
Forward voltage
VFSD
Reverse recovery charge
Qrr
Reverse recovery time
trr
Reverse recovery charge
Qrr
Reverse recovery time
trr
Preliminary, February 2017
Value
Min
Typ
VGS = 0V, IF =20A,
TJ = 25°C
1.45
VGS = 0V, IF = 20A,
TJ =150°C
2.1
VR=800V, IF=24.5A,
VGS =0V,RG_EXT = 22W
di/dt=1300A/ms,
TJ = 25°C
VR=800V, IF=24.5A,
VGS =0V,RG_EXT = 22W
di/dt=1300A/ms,
TJ = 150°C
2
Max
Units
2
V
190
nC
34
ns
227
nC
36
ns
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xJ SiC Series | 60mW - 1200V SiC Cascode | UJC1206K
Datasheet
Typical Performance - Dynamic
Parameter
Value
symbol
Test Conditions
Ciss
Coss
Crss
VDS = 100V,
VGS = 0V,
f = 100kHz
Effective output capacitance, energy related
Coss(er)
VDS = 0V to 800V,
VGS = 0V
98
pF
Effective output capacitance, time related
Coss(tr)
VDS = 0V to 800V,
VGS = 0V
174
pF
COSS stored energy
Eoss
VDS = 800V, VGS = 0V
31
mJ
Total gate charge
Gate-drain charge
QG
QGD
47.5
15
nC
Gate-source charge
QGS
Turn-on delay time
td(on)
Input capacitance
Output capacitance
Reverse transfer capacitance
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
Turn-on energy
EON
Turn-off energy
EOFF
Total switching energy
ETOTAL
Turn-on delay time
td(on)
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
Turn-on energy
EON
Turn-off energy
EOFF
Total switching energy
ETOTAL
Min
VDS=800V, ID = 24.5A,
VGS=0V to 12V
Typ
2214
178
3.5
Max
Units
pF
15
41
VDS=800V, ID=24.5A,
Gate Driver =0V to
+12V,
Turn-on RG,EXT = 2W,
Turn-off RG,EXT = 22W
Inductive Load,
FWD: UJ2D1215T
TJ = 25°C
25
ns
94
21
657
mJ
147
804
41
VDS=800V, ID=24.5A,
Gate Driver =0V to
+12V,
Turn-on RG,EXT = 2W,
Turn-off RG,EXT = 22W
Inductive Load,
FWD: UJ2D1215T
TJ = 150°C
33
ns
102
22
735
mJ
186
921
Thermal Characteristics
Parameter
Thermal resistance, junction-to-case
Preliminary, February 2017
symbol
Test Conditions
RqJC
3
Value
Min
Typ
0.5
Max
0.65
Units
°C/W
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xJ SiC Series | 60mW - 1200V SiC Cascode | UJC1206K
Datasheet
Typical Performance Diagrams
100
100
90
Vgs = 15V
Vgs = 8V
70
Vgs = 7.5V
60
Vgs= 7V
50
Vgs = 6.5V
Drain Current, ID (A)
Drain Current, ID (A)
80
40
30
20
10
Vgs = 15V
80
Vgs = 8V
70
Vgs= 7V
Vgs = 6.5V
60
Vgs = 6V
50
40
30
20
10
0
0
0
1
2
3
4
5
6
7
8
9
Drain-Source Voltage, VDS (V)
10
0
Figure 1 Typical output characteristics
at T j = - 55°C, tp < 250 m s
1
2
3
4
5
6
7
8
9
Drain-Source Voltage, VDS (V)
10
Figure 2 Typical output characteristics
at T j = 25°C, tp < 250 m s
100
2.5
80
70
60
On Resistance, RDS_ON (P.U.)
Vgs = 15V
Vgs = 8V
Vgs= 7V
Vgs = 6.5V
Vgs = 6V
90
Drain Current, ID (A)
90
50
40
30
20
10
0
2.0
1.5
1.0
0.5
0.0
0
1
2
3
4
5
6
7
8
9
Drain-Source Voltage, VDS (V)
10
-60
Figure 3 Typical output characteristics
at T j = 150°C, tp < 250 m s
Preliminary, February 2017
-30
0
30
60
90 120 150
Junction Temperature, TJ (°C)
Figure 4 Normalized on-resistance vs.
temperature at V GS = 12V and
I D = 20A
4
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xJ SiC Series | 60mW - 1200V SiC Cascode | UJC1206K
Datasheet
80
Tj = -55°C
120
100
Drain Current, ID (A)
On-Resistance, RDS(on) (mW)
140
Tj = 150°C
Tj = 25°C
Tj = - 55°C
80
60
40
Tj = 150°C
40
20
20
0
0
0
20
40
60
Drain Current, ID (A)
80
100
0
Figure 5 Typical drain-source
on-resistance at V GS = 12V
2 3 4 5 6 7 8 9
Gate-Source Voltage, VGS (V)
10
Gate-Source Voltage, VGS (V)
20
5
4
3
2
1
0
-100
1
Figure 6 Typical transfer characteristics
at V DS = 5V
6
Threshold Voltage, Vth (V)
Tj = 25°C
60
15
10
5
0
-50
0
50
100
150
Junction Temperature, Tj (°C)
200
0
Figure 7 Threshold voltage vs. Tj
at V DS = 5V and I D = 10mA
Preliminary, February 2017
10
20
30
40
50
Gate Charge, QG (nC)
60
70
Figure 8 Typical gate charge
at V DS = 800V and I D = 24.5A
5
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xJ SiC Series | 60mW - 1200V SiC Cascode | UJC1206K
Datasheet
0
0
Vgs = 0V
Vgs = 0V
Vgs = 8V
Vgs = 15V
-20
Vgs= 5V
-10
Vgs= 5V
Drain Current, ID (A)
Drain Current, ID (A)
-10
-30
-40
-50
Vgs = 8V
Vgs = 15V
-20
-30
-40
-50
-3
-2
-1
Drain-Source Voltage, VDS (V)
0
-3
Figure 9 3rd quadrant characteristics
at T J = - 55°C
-2
-1
Drain-Source Voltage, VDS (V)
0
Figure 10 3rd quadrant characteristics
at T J = 25°C
0
70
Vgs = 0V
Vgs= 5V
60
Vgs = 8V
50
Vgs = 15V
-20
EOSS (mJ)
Drain Current, ID (A)
-10
-30
40
30
20
-40
10
0
-50
-5
-4
-3
-2
-1
Drain-Source Voltage, VDS (V)
0
0
Figure 11 3rd quadrant characteristics
at T J = 150°C
Preliminary, February 2017
200
400
600
800 1000
Drain-Source Voltage, VDS (V)
1200
Figure 12 Typical stored energy in C OSS
at V GS = 0V
6
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xJ SiC Series | 60mW - 1200V SiC Cascode | UJC1206K
Datasheet
45
Ciss
DC Drain Current, ID (A)
40
Capacitance, C (pF)
1000
Coss
100
10
Crss
30
25
20
15
10
5
0
1
0
200
400
600
800 1000
Drain-Source Voltage, VDS (V)
-60
1200
Figure 13 Typical capacitances at 100kHz
and V GS = 0V
-30
0
30
60
90
120
Case Temperature, TC (°C)
150
Figure 14 DC drain current derating
200
1
175
Thermal Impedance, ZqJC (°C/W)
Power Dissipation, Ptot (W)
35
150
125
100
75
50
25
0
-60
-30
0
30
60
90 120
Case Temperature, TC (°C)
150
0.01
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
0.001
1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01
Pulse Time, tp (s)
Figure 15 Total power dissipation
Preliminary, February 2017
0.1
Figure 16 Maximum transient thermal impedance
7
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xJ SiC Series | 60mW - 1200V SiC Cascode | UJC1206K
Datasheet
1000
100
800
Switching Energy (mJ)
10ms
Drain Current, ID (A)
VDD = 800V
VGS = 0V/+12V
RG_EXT_ON = 2W
RG_EXT_OFF = 22W
FWD: UJ2D1215T
1ms
10
100ms
1
1ms
10ms
DC
0.1
1
600
Etot
Eon
Eoff
400
200
0
0
10
100
1000
Drain-Source Voltage, VDS (V)
Figure 17 Safe operation area
T c = 25°C, D = 0, Parameter t p
25
30
Figure 18 Clamped inductive switching energy
vs. drain current at T J = 25°C
1000
500
VDD = 800V
ID = 24.5A
VGS = 0V/+12V
FWD: UJ2D1215T
TJ = 25°C
900
800
400
Turn-Off Energy, Eoff (mJ)
Turn-on Energy, Eon(mJ)
5
10
15
20
Drain Current, ID (A)
700
600
500
VDD = 800V
ID = 24.5A
VGS = 0V/+12V
FWD: UJ2D1215T
TJ = 25°C
400
300
200
100
0
0
2
4
6
8
10
12
Total External RG, RG,EXT_ON (W)
14
200
100
0
0
Figure 19 Clamped inductive switching
turn-on energy vs. R G,EXT_ON
Preliminary, February 2017
300
10
20
30
40
50
60
Total External RG, RG,EXT_OFF (W)
70
Figure 20 Clamped inductive switching
turn-off energy vs. R G,EXT_OFF
8
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xJ SiC Series | 60mW - 1200V SiC Cascode | UJC1206K
Datasheet
RG_ON
2.2W
VGS
0 to +12V
SiC
Cascode
DON
1A, 40V
RG_OFF
22W
SiC Cascode Internal Schematic
Figure 21 Recommended gate drive and internal circuit schematic of SiC cascode
Applications Information
SiC cascodes are enhancement-mode power siwtches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon
MOSFET connected in series as shown in Figure 21. The silicon MOSFET serves as the control unit while the SiC JFET provides high
voltage blocking in the off state. This combination of devices in a single package provides compatibility with standard gate drivers
and offers superior performance in terms of low on-resistance (RDS(on)), output capacitance (Coss), gate charge (Qg), and reverse
recovery charge (Qrr) leading to low conduction and switching losses. The SiC cascodes also provide excellent reverse conduction
capability eliminating the need for an external anti-parallel diode.
Like other high performance power switches, proper PCB layout design to minimize circuit parasitics is strongly recommended due
to the high dv/dt and di/dt rates. In particular, separate turn-on and turn-off gate resistors are recommended as shown in Figure
21. In addition, an external gate resistor is recommended when the cascode is working in the diode mode in order to achieve the
optimum reverse recover performance. For more information on cascode operation, see www.unitedsic.com.
Disclaimer
United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical
specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies
within.
Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual
property rights is granted within this document.
United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc.
products and services described herein.
Preliminary, February 2017
9
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