Hole Electrical Transporting Properties in Organic-Si Schottky Solar Cell
Xiaojuan Shen, Yawen Zhu, Tao Song, Shuit-Tong Lee, Baoquan Suna
Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional
Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren’ai Road, Suzhou, 215123,
China
Transient Electric Output Characterisics Measurements
In the transient photovoltage measurements the devices were connected to a
digital oscilloscope with an input impedance of 1 MΩ, the intensity of white light was
used to control the open-circuit voltage Voc of the devices, and here the white light
was referred as a “light bias”. A laser with wavelength of 532 nm was used as the
optical perturbation, the pulse duration is set to 1 μs and the frequency to 100 Hz,
which caused a voltage transient with a peak value of 10 mV<Voc. Keep the frequency,
light intensity and pulse duration unchanged, the photocurrent transient was measured
at an impedance of 50 Ω. The voltage and photocurrent transients resulted from the
perturbation light pulse were plotted in Fig. S1(a) and (b). The capacitance and carrier
concentration (N) at each Voc can be calculated with the help of following equations:
t
ΔQ=∫0 Idt
C=ΔQ/ΔV0
1
Voc
N=Aed ∫0
CdV
where, I is the value of transient photocurrent, ΔV0 is peak value of the voltage
transient (10 mV), ΔQ is the charge by integrating the photocurrent transient with
respect to time (t) for the same laser pulse (Fig. S2), C is the capacitance at each Voc,
A is the device area, e is electronic charge, d is the device thickness, N is the carrier
concentration.
1
0.2
(a)
(b)
Current (mA)
Voltage(mV)
9
6
3
0
-0.1
0.0
0.1
0.1
0.0
-0.1
0.2
Time(ms)
0.0
0.1
0.2
Time(mS)
Fig. S1 VOC (a) and JSC (b) transients induced from the perturbation light pulse
C(F/cm2)
1E-5
1E-6
1E-7
1 air
2 nitrogen
.
1E-8
0.2
0.3
0.4
Voltage(V)
0.5
0.6
Fig. S2 Differential capacitance vs. VOC for the Schottky Si/PEDOT:PSS cells with
PEDOT:PSS films annealed in different atmospheres.
2