6N60
Power Mosfet
6.2 Amps, 600/650 Volts
N-CHANNEL MOSFET
DESCRIPTION
The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed
switching applications in switching power supplies and adaptors.
FEATURES
* RDS(ON) = 1.5Ω @VGS = 10V
* Ultra low gate charge (typical 20 nC )
* Low reverse transfer Capacitance ( CRSS = typical 10pF )
* Fast switching capability
* Avalanche energy tested
* Improved dv/dt capability, high ruggedness
SYMBOL
*Pb-free plating product number: 6N60L
ORDERING INFORMATION
Package
Ordering Number
Normal
Lead Free Plating
6N60-x-TA3-T
6N60L-x-TA3-T
www.artschip.com
TO-220
1
Packing
Pin Assignment
1
2
3
G
D
S
Tube
6N60
Power Mosfet
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
Drain-Source Voltage
SYMBOL
VDSS
6N60-A
6N60-B
Gate-Source Voltage
Avalanche Current (Note 1)
Continuous Drain Current
VGSS
IAR
ID
TC = 25°C
TC = 100°C
Pulsed Drain Current (Note 1)
Avalanche Energy
Single Pulsed (Note 2)
Repetitive (Note 1)
Power Dissipation
Junction Temperature
Operating Temperature
Storage Temperature
IDM
EAS
EAR
PD
TJ
TOPR
TSTG
RATINGS
600
650
±30
6.2
6.2
3.9
24.8
440
13
62.5
+150
-55 ~ +150
-55 ~ +150
UNIT
V
V
V
A
A
A
A
mJ
mJ
W
°C
°C
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction-to-Ambient
Junction-to-Case
SYMBOL
θJA
θJC
RATING
62
2
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
6N60-A
6N60-B
Forward
Reverse
Breakdown Voltage Temperature
SYMBOL
TEST CONDITIONS
MIN
BVDSS
VGS = 0V, ID = 250µA
600
650
IDSS
IGSS
VDS = 600V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
△BVDSS/△TJ
ID = 250 µA, Referenced to
Coefficient
TYP
MAX
UNIT
10
100
-100
V
V
µA
nA
nA
0.53
V/°C
25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS = 10V, ID = 3.1A
Turn-On Delay Time
tD(ON)
VDD=300V, ID =6.2A, RG =25Ω
Turn-On Rise Time
tR
(Note 4, 5)
Turn-Off Delay Time
2.0
4.0
V
1.5
Ω
20
50
ns
70
150
ns
tD(OFF)
40
90
ns
Turn-Off Fall Time
tF
45
100
ns
Total Gate Charge
QG
VDS=480V, ID=6.2A, VGS=10 V
20
25
nC
Gate-Source Charge
QGS
(Note 4, 5)
4.9
nC
Gate-Drain Charge
QGD
9.4
nC
DYNAMIC CHARACTERISTICS
www.artschip.com
2
6N60
Power Mosfet
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
1.4
V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
VGS = 0 V, IS = 6.2 A
Maximum Continuous Drain-Source Diode
IS
6.2
A
ISM
24.8
A
Forward Current
Maximum Pulsed Drain-Source Diode
Forward Current
Reverse Recovery Time
tRR
VGS = 0 V, IS = 6.2 A,
290
ns
Reverse Recovery Charge
QRR
dIF/dt = 100 A/µs (Note 4)
2.35
ns
1. Repetitive Rating : Pulse width limited by TJ
2. L = 16.8mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 6.2A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
www.artschip.com
3
6N60
Power Mosfet
TEST CIRCUITS AND WAVEFORMS
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
Fig. 1B Peak Diode Recovery dv/dt Waveforms
www.artschip.com
4
6N60
Power Mosfet
TEST CIRCUITS AND WAVEFORMS (Cont.)
www.artschip.com
5
6N60
Power Mosfet
www.artschip.com
6