Ultra Compact PQFN2x2
Power MOSFET for Low
Power Applications
The PQFN 2mm x 2mm package features IR’s latest
HEXFET® MOSFET silicon that delivers an ultra
compact, high density and efficient solution for a wide
variety of lower power applications including smart
phones, tablet PCs, camcorders, digital still cameras,
and notebook PC, server and network communication
equipment.
Features
• Low RDS(on) (< 12mΩ) results in lower
conduction losses
• Low Thermal Resistance to PCB (< 13º
C/W) results in enabling better thermal
dissipation
• Low Profile (< 1.0 mm) results in increased
power density
• Compatible with existing surface mount
techniques resulting in easier manufacturing
• RoHS compliant containing no Lead, no
Bromide and no Halogen resulting in
environmentally friendlier
• MSL1, consumer qualification resulting in
increased reliability
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Advantages
• Featuring a footprint of just 4mm2, the new PQFN2x2 devices,
which are available in 20V, 25V and 30V with standard or logic level
gate drive, utilize IR’s latest low voltage N-Channel and P-Channel
silicon technologies to offer very low on-resistance (RDS(on)), and
high power density in line with a PQFN3.3x3.3 or PQFN5x6
package.
• The PQFN2x2 family includes P-Channel devices optimized for use
in the high-side of load switches providing a simpler drive solution.
• Featuring a low profile of less than 1 mm, the devices are
compatible with existing Surface Mount Techniques, feature
industry-standard footprint and are RoHS compliant.
June 2011