AlGaInP/Si Yellow Orange Chip ---TK0540SOH
1. Scope
‧AlGaInP High-Brightness LED chip.
‧Type : TK0540SOH.
2. Structure
‧AlGaInP on Silicon
‧N Electrode (cathode) side
‧P Electrode (anode) side
: Gold
: Gold Alloy
3. Size
‧Chip size
: 40mil × 40mil ( 1000um × 1000um )
‧Chip height
: 200 ± 15um
‧Pattern drawing : per fig. 1
4. Electro-Optical Characteristics
Parameter
Forward Voltage (1)
Forward Voltage (2)
Reverse Voltage
Luminous Intensity
Wavelength
Spectrum Width of Half Value
Symbol
VFL
VF1
IR
IV
λd
Δλ
Condition
IF =10 uA
IF =350 mA
VR = 10 V
IF =350 mA
IF =20 mA
IF =20 mA
Min.
1.3
Typ.
2.5
※
602
608
20
(Ta = +25 ℃)
Max.
Unit
V
2.7
V
10
μA
mcd
612
nm
nm
Maximum reverse-biased voltage < 60V; therefore, VZ test is forbidden.
※ ‧Rank V : min.≧7500
‧Rank W : min.≧8700
‧Rank X : min.≧9900
‧Rank Y : min.≧11400
‧Rank Z : min.≧13100
N-electrode
AlInGaP
Epi-layers
950
1000
Si substrate
200
P-electrode
1000
Unit：μm
fig. 1
*Recommendation for bonding condition : Base on ASM Eagle-60
bonding force=40g；bonding power=50mw；
bonding temperature 280℃；bonding time 20ms.
*Storage condition：temperature 0 ~ 35℃, humidity≦60% RH.
2012.May
□ TYNTEK Head Office
□ TYNTEK Chunan Branch
http：//www.tyntek.com.tw
Tel：886-3-5781616
Fax：886-3-5780545
Tel：886-37-582997
Fax：886-37-582908
E-mail：[email protected]
AlGaInP/Si Yellow Orange Chip ---TK0540SOH
Electro-Optical Characteristics Curve
Forward current vs. Forward voltage
Relative intensity vs. Forward current
Forward voltage vs. Temperature
Relative intensity vs. Temperature
2.5
Relative Intensity
Normalize @ 25℃
Forward Voltage
Normalize @ 25℃
1.2
1.1
1
0.9
2
1.5
1
0.5
0.8
-20 0 10 20 25 30 40 50 60 70 80
Ambient Temperature(℃)
0
-20 0 10 20 25 30 40 50 60 70 80
Ambient Temperature(℃)
Relative intensity vs. Wavelength
□ TYNTEK Head Office
□ TYNTEK Chunan Branch
http：//www.tyntek.com.tw
Tel：886-3-5781616
Fax：886-3-5780545
Tel：886-37-582997
Fax：886-37-582908
E-mail：[email protected]