Title
G-APD Avtivities at GSI
G-APD Activities at GSI
•Present instrumentation for the project
•Pulse hight spectra of SiPM from different producers
•First spectral sensitivity measurements
•Development of a Cherenkov photon counter
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth
1. Present instrumentation for the project
G-APD Avtivities at GSI
PicoQuant pulsed light source
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Driver PDL 800-D
LED head λ = 460 nm, Δt = 1 ns
Diode laser head λ = 660 nm, Δt = 50 ps
Tektronix Digital Oscilloscope DPO7000
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4 Channel, 2,5 GHz, 40 Gs/s
3.5 GHz differential probe
VME
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CAEN 32 ch TAC 20ps
CAEN 32 ch QDC 0.1 pC
Precision V-A meters
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Two 5-1/2 digits
Power suplies
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth
Work Bench in PANDA Lab
PicoQuant light source driver
G-APD Avtivities at GSI
Dark box
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth
G-APD Avtivities at GSI
Work Bench in APD Lab
Monochrometer λ = 200 – 800 nm
Light coupling to 20 quartz fibers
MAPD3
Dark box
G-APD box
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth
L = 6,0
L = 6,1
Hamamatsu slow
90 mV/div
10ns/div
L = 6,15
MPPC 11-25C, Vbias = 70,3 V
LED-450nm,
AMP-0604 slow preamp (4ns)
L : light intensity
L : light intensity
MPPC 11-25C, Vbias = 70,3 V
LED-450nm,
AMP-0611 fast preamp (.7ns)
G-APD Avtivities at GSI
10 mV/div
L = 6,05
5 ns/div
Laserhead 650 nm
L = 6,10
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth
G-APD Avtivities at GSI
L = 6,05
L = 6,05
Sensor #1
Sensor #2
10 mV/div
5 ns/div
MAPD1 (old), Vbias=34.3 V
LED 450 nm
AMP-0611 (fast)
L = 6,20
L : light intensity
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth
G-APD Avtivities at GSI
L = 6.0; 5 mV; 5 ns
L = 6.2; 5 mV; 10 ns
MAPD3(old)
MAPD 3A
Zecotek
L = 6.1; 20 mV; 20 ns
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
MAPD 3B
L = 6.0; 5 mV; 10 ns
A.Wilms H.Orth
G-APD Avtivities at GSI
L = 6.00: 20 mV; 20 ns
L = 5.95; 20 mV; 20 ns
SensL SPMM 3035 (3640 cells); Vbias = 30.3 V
L = 6.05; 20 mV; 20 ns
L = 6.10; 20 mV; 20 ns
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth
G-APD Avtivities at GSI
L = 5.90: 10 mV: 20 ns
L = 6.00; 20 mV; 20 ns
SensL SPMM 3020 (8640 cells) Vbias = 30.3 V
L = 6.05; 20 mV; 20 ns
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
L = 6.10; 20 mV; 20 ns
A.Wilms H.Orth
G-APD Avtivities at GSI
L = 5.90; 10 mV; 20 ns
L = 5.90; 5 mV; 20 ns
Photonique SPMM 611B4 MM-PCB (4.4mm2); blue sensitive Vbias = 27 V
L = 6.10; 10 mV; 20 ns
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
L = 6.10; 10 mV; 5 ns
A.Wilms H.Orth
G-APD Avtivities at GSI
Spectral sensitivity of Hamamatsu sensor
MPPC 11-25C; 70.3V
Calibrated PIN Diode
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth
G-APD Avtivities at GSI
Spectral sensitivity of Zecotek sensors
MAPD 3B; 68.5V
MAPD 3A; 66.8V
MAPD 3; 97.5V
Calibrated PIN diode
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth
G-APD Avtivities at GSI
Large area sensor with light catcher
4 x 4 matrix
Hamamatsu 33-050C
or
Zecotek MAPD3
35 mm
8.5 mm
Aim: 8 x 8 matrix with PDE larger than 20 %
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth
G-APD Avtivities at GSI
FP7 Kick-off Workshop on G-APDs GSI 9-10 Feb. 2009
A.Wilms H.Orth