Brizon Inc
www.brizon.net
[email protected]
Products:
• Microelectronic Application
•
•
•
CMP Slurry additive
CMP cleaning solutions
Wafer storage buffer solution
• Smart Curable Products
•
Flexible Screen Applications
•
LED Applications
•
High Temperature Resistance
•
And low IR emission Applications
Products for the Semiconductor Industry:
BriteClean-0+ : CMP cleaning process
BriteClean-1 : CMP cleaning process
•
•
•
•
Improves post process surface cleanliness for particles and surface
residues.
Improves next layer of deposition
Protects both metal and oxide surfaces
Improves wafer rinseability
BriteClean-ACP : Slurry Additives
•
•
•
Stabilize Slurry and Improve CMP efficiency
Reduce and/or Eliminate macro- and micro-scratches
Improve uniformity of material removal
Background of Briteclean
 Innovative Technology




Longer shelf life - over two years
Much easier control processes and environments
Much more efficient for the cleaning process
One process fit more applications
 One Process with Briteclean(s) Can Clean all
 Alumina
 NiFeCo, Cu abrasives
 CeO abrasives
 Colloidal SiO2
 Et al
Components
• Non-ionic surfactants
• Mixed surfactanized metal inhibitors
and antioxidant agents
• Additional metal inhibitors
and antioxidant agent
• Chelating agent
• Particle removing agent
Hydrophilic
Metal inhibitor head
Aliphatic
Hydrophobic tail
Ethoxylated
Hydrophilic Tail
Anti-oxidant
Hydrophobic Head
+
Briteclean-0+
Briteclean-0+:Briteclean-1 = 1:1
In 50X aqueous dilution
Briteclean-1
Briteclean-0+:Briteclean-1 = 1:1
Bulk solution
Phase separation
Microelectronic application - CMP
Briteclean – 0+
Briteclean - 1
Briteclean-ACP
Pre/Post
Cleaning Process
YES
YES
YES
Slurry Additives
YES
YES
YES
Storage/Buffer
NO
NO
YES
Need to mix
Need to mix
with BC-0+
Alone
2% - 5%
2% - 5%
1% - 4%
Application with BC-1 or BC-ACP
Usage
Examples of Application in Real Field FAB
 Briteclean-0+ and Briteclean-1 Mixed: Ratio 1:1 in 1.0-2.0%
aqueous media
 Slurry applied: in MH837/MH834/MH814 (Cabot)
 Pad applied: IC1000 (white pad --- Rodel/(Rohm Haas))
Sub IV (black pad --- Rodel (Rohm Haas))
 Tool platforms Applied: 8" Mirra (Applied Materials); 8"
Ebara (Ebara); 8" 6DS-SP(Strausbaugh)
 Wafer: Cu, Ni/Fe, Low key and Al2O3
• Dramatic Yield Improvement
•
•
•
Improved within (WIW) wafer uniformity by ~1X
Enhanced Cleanliness
Improved Surface Roughness (NiFe<1nm)
• No Additional Processes Needed
•
Flexible conditions
• Environmental Friendly
•
No corrosive, no high or very low pH
Layer X CMP Comparison
Layer X CMP Performance Comparison
Wafer ID Existing
Slurry
1
2
3
4
5
6
7
8
Mean Metal
ALO
Thickness
Metal WIW Thickness
Oxide WIW Added
(FEI)-O
Sigma-O
(Nano)-O
Sigma-O
Paticles
261
7.3
267
10.2
217
257
8.1
261
8.2
198
265
2.4
273
3.6
229
263
8.3
268
9.4
363
251
6.1
261
7.5
107
278
5.9
283
6.9
267
255
6.9
267
8.1
271
263
7.2
267
7.8
400
Mean
Std. Dev.
3 Sigma
261.63
7.60
22.79
6.53
1.75
5.24
268.38
6.61
19.84
7.71
1.84
5.52
256.50
86.85
260.55
278
251
27
8.3
2.4
5.9
283
261
22
10.2
3.6
6.6
400
107
293
Max.
Min.
Range
Mean Metal Thickness (FEI)-O
Wafer ID
with Brite
Additives
1
2
3
4
5
6
7
8
Mean Metal
ALO
Thickness
Metal WIW Thickness
Oxide WIW Added
(FEI)-B
Sigma-B
(Nano)-B
Sigma-B
Paticles
263
3
249
2.7
30
251
4
267
2.1
0
265
4.2
253
3
139
256
2.9
263
1.9
271
258
3.1
262
2.4
0
261
3.3
262
2.9
225
260
4.1
261
2
57
266
2.8
265
2.5
68
Mean
Std. Dev.
3 Sigma
260.00
4.64
13.91
3.43
0.54
1.63
260.25
5.72
17.15
2.44
0.39
1.16
98.75
96.27
288.82
266
251
15
4.2
2.8
1.4
267
249
18
3
1.9
1.1
271
0
271
Max.
Min.
Range
Metal WIW Sigma-O
Mean Metal Thickness (FEI)-B
Metal WIW Sigma-B
9
285
280
8
275
7
270
6
265
5
260
4
255
3
250
245
2
240
1
235
0
1
2
3
4
5
6
ALO Thickness (Nano)-O
7
8
9
10
1
2
3
4
5
6
7
8
9
10
ALO Thickness (Nano)-B
Oxide WIW Sigma-O
290
Oxide WIW Sigma-B
12
280
10
270
8
260
6
250
4
240
2
230
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
Comparing SEM images of Silicon wafer surface
Slurry only
Slurry +
Brizon products
Principle of Slurry Additive
for CMP Applications
 Slurry distribution on polishing pads is a critical factor
to achieve better WIW uniformity
 Adding Brizon products into CMP slurries, the slurry
surface extension with IC series CMP pads was
modified to a form a uniformed slurry layer across the
whole wafer
Slurry Feed
Wafer
IC CMP Pad
Surf-Clean Data
For Competitor’s Clean Solution
Pre-Treatment
NiFe
Alumina
Post-Treatment
Surf-Clean Data
For Mixed BriteClean Solution
Pre-Treatment
NiFe
Alumina
Post-Treatment
Different Slurry Cleanability
BriteClean vs Competitor Particle Count
BriteClean mixed Solution
Con-1
Con-2
Alumina
-70
-22
NiFe
-66
-340
Competitor's Cleaning Solution
Con-1
Con-2
Alumina
190
1571
NiFe
280
370
Different Method Cleanability
BriteClean vs Competitor Particle Counts
BriteClean mixed Solution
Roller
Pencil
Alumina
10
-10
NiFe
24
-6
Competitor's Cleaning Solution
Roller
Pencil
Alumina
318
190
NiFe
2985
280
BriteClean Mixture Initial
Cleaning Solution (Pre-)
Post
(PostCleaning Pre)
Tool-1
259
268
9
Tool-2
692
640
-52
Tool-3
675
123
-552
Tool-4
207
78
-129
Competitor's
Cleaning Solution
Initial
(Pre-)
Tool-1
477
1445
968
Tool-2
891
3065
2174
Tool-3
133
528
395
Tool-4
500
845
345
Alumina
NiFe
Alumina
NiFe
Post
(PostCleaning Pre)
Particle Count/Roughness vs Ration of BC-0/BC-1
Particle count
Roughness
2500
0.3
2258
1500
Particle
1000
500
Roughness(nm)
Particle count
2000
0.27
0.26
0.25
0.2
0.15
Roughness
0.13
0.1
0.05
114
107
0
0
0
10
20
30
40
50
60
70
BriteClean-1 100%
80
90
100
BriteClean-0 100%
Mixing ratio (Briteclean--0/1)%
On NiFe wafer
0
10
20
30
40
50
60
70
BriteClean-1 100%
80
90
100
BriteClean-0 100%
Mixing ratio (Briteclean--0/1)%
Principle of Cleaning Process
for CMP Applications
 Slurry
Dissolved/Dispersed into Advanced
Nonionic Surfactants, Slurry Chemistry
 Trace Metals
Dispersed into Advanced
Nonionic Surfactants
 Metal Ions
Complex to Chelate in
the Cleaning System
 Aggressive
Corrosive
High/Low pH
Buffered by the Cleaning Solution
Post CMP&Cleaning AFM images (Cu plated wafer)
BriteClean Mixture
Competitor’s Cleaning Solution
Post CMP&Cleaning AFM images (Cu plated wafer)
BriteClean Mixture
Average Roughness(N=3x3):
Rms=0.29nm
Competitor’s Cleaning Solution
Average Roughness(N=3x3):
Rms=0.34nm
Roughness is better, surface residues reduced
Customer Testing Platform
BriteClean vs Competitor's
 Full NiFe, Cu and Alumina
 Particle Counts were measured by Tencor Surf scan
 Various Cleaning Tools were used
Including Mirra, SSEC, DNS
pH Changes vs the Ratio of
BriteClean-0/BriteClean-1
8.5
8
7.85
7.5
7.2
7
pH
6.8
6.5
6.3
5.5
5
0
100%
BriteClean-1
10
20
30
40
50
60
70
Diluted 50 times in DI H2O
80
90
100
100%
BriteClean-0
Recommended Application: Briteclean-0/Briteclean-1 = 1:1
Diluted to 2%-5% times with DI H2O
Wafer Storage Buffer Solution-ACP
 One customer requested application
 Store the wafer in DI water, but surface materials was
etched, both metal and Oxide
 Designed BriteClean-ACP. Currently being used in
customer’s production
 No etching on surface materials up to 6 hours in DI
water
 No detailed data was provided by customer
Principle of Prevention Processing
 Mono-layer
on Surface
Prevents Redeposition of
Any Contamination and
Prevents Any Oxidation
 Hydrophobic/Hydrophilic Balanced of the Mono-layer
Improved Rinsability
Sensor Circuit Measurement
 Sensor dimension was designed for different usages.
 4-point scheme minimizes contact resistance during probing
26
Sensitivity Measurement Trend Chart
Brit
Briteclean products
Competitor’s products
A Plethora of Materials
In Semiconductor Area
•
•
•
•
•
•
•
•
Oxide, such as Al2O3
Colloidal SiO2
NiFeCo
Cu, Al, W
Polymers
Ru
Si
Et al
Advantages of BriteClean as Slurry Additive
• Stabilize slurry and improve CMP efficiency
• Improve slurry uniformity across polishing pad
• Improve WIW uniformity
Advantages of BriteClean
Reduced particle counts
•
Efficient cleaning process
Much improved surface roughness
•
Surface protection
 Much easier process
• Mixture system
• No need for any process changes
Advantages of BriteClean ACP
• Stabilizes slurry for more efficient CMP
• Protects against oxidation on metal wafer
• Improves next layer of deposition
Thanks !
www.brizon.net
[email protected]