Infineon IGBT- Smart Choice in
Home Appliance
– New IGBT family optimized for home appliance
Jimmy Wang (王 进)
Infineon technologies China
System application engineer
[email protected]
Contents
IGBT overview
Infineon new high speed3 IGBT
Infineon RC-drives IGBT
Aircon split system with Infineon high speed3 & RC-drives IGBT
2017/7/31
Copyright © Infineon Technologies 2008. All rights reserved.
Page 2
Contents
IGBT overview
Infineon new high speed3 IGBT
Infineon RC-drives IGBT
Aircon split system with Infineon high speed3 & RC-drives IGBT
2017/7/31
Copyright © Infineon Technologies 2008. All rights reserved.
Page 3
Discrete IGBTs - Applications
Discrete IGBTs Applications
White goods & consumer
Drives
 Washing machines
 Vacuum cleaners
 Air Conditioners
 Refrigerators
 Dishwashers
 Inductive cooking
Low power industrial
drives
 Escalators, Elevators
 Industrial robots
 Air handling, Fans
 Pumps
 Sewing machines
Inverter
Driven
Applications
UPS systems and power
supplies
Solar inverters
Welding
Automotive
2017/7/31
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Page 4
IGBT - Where to use...
Difference between IGBT, MOSFET and Bipolar Transistor
Application
Requirements
MOSFET
IGBT
Difference IGBT vs. MOSFET:
high
• smaller chip size -> lower price
• softer switching, lower EMI
• temperature stable - no significant
losses increase @ increasing Ta / Tj
• not suitable for ultra high
frequencies
Diff. IGBT vs. Bipolar:
low
• higher ruggedness
(short circuit,
avalanche)
• easier design
• less passive devices
needed in system
->lower system cost
at same low VCEsat
Bipolar Transistor
Frequency
low <12 kHz
medium <40 kHz
high <150kHz
Ultra high (>150 kHz)
Application frequency is the main selection criteria of IGBT
2017/7/31
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Page 5
IGBT comparing MOSFET
MOSFET
IGBT
Additional P+ layer
2017/7/31
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Page 6
Contents
IGBT overview
Infineon new high speed3 IGBT
Infineon RC-drives IGBT
Aircon split system with Infineon high speed3 & RC-drives IGBT
2017/7/31
Copyright © Infineon Technologies 2008. All rights reserved.
Page 7
Technological Background
Difference between IGBT and MOSFET
Conducting
IC
Switching
IC
ID
UDS
VCEI
D
knee voltage
VCEsat
VDS
The IGBT is characterized by it‘s knee voltage.
Conduction loss are in (approx.) linear
relation to IC
current tail
t
The IGBT has a characteristic current tail.
Turn off losses are dominated by the tail
current.
The MOSFET behaves like a resistor.
Conduction loss are proportional to ID²
The IGBT is basically the preferred device for higher currents at limited pulse frequencies.
2017/7/31
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Page 8
Technological background: TrenchStopTM
TrenchStopTM is the common technology base of new IGBT
families from Infineon
2017/7/31
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Page 9
Technological background:
Tuning IGBT performance
 The key to IGBT performance is the carrier profile engineering
Increased carrier concentration:
•Lower VCEsat
Switching losses (Eoff)
•Higher Eoff
Reduced carrier concentration:
•Higher VCEsat
Switching
losses
•Lower Eoff
Conduction
losses
2017/7/31
Conduction losses (VCEsat)
Ruggedness
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EMI
Page 10
Competitor landscape
Trade-off diagram
Ic = In/2, Tj= 150°C
32
Eoff / m J/A
30
IKP15N60T
28
26
SKB15N60HS
24
22
Competitor A
20
18
16
14
IGW40N60H3
HighSpeed3
Competitor B
12
1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4
VCEsat / V
2017/7/31
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Applikationsbewertung
Page 11
600V High speed 3 IGBT product family
TO-263
TO-220
TO-247
Continuous
collector
current
at T C=100°C
Single IGBT
15A
20A
IGB20N60H3*
IGP20N60H3

IGB30N60H3*
IGP30N60H3

25A
30A
40A
50A
IGW40N60H3
IGW50N60H3


IKW20N60H3

DuoPack ™
15A
20A
IKB20N60H3*
IKP20N60H3*
IKB30N60H3*
IKP20N60H3*
25A
30A

IKW40N60H3 
IKW30N60H3
40A
50A
IKW50N60H3*
75A
IKW75N60H3*
* Engineering samples October 2010
2017/7/31
 Devices are fully released
Copyright © Infineon Technologies 2008. All rights reserved.
Page 12
High speed 3 IGBT technology
switching waveform
Std IGBT3
High Speed 3
 Elimination of tail current
at high temperature…
 …for MOSFET-like switching
Coolmos C3
High Speed 3
behavior
2017/7/31
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Page 13
Diode selection: example of Turn-on Waveforms
showing benefit of SiC diode
Ic=20A, Vdc=400V, Rgon=10 Ohm, Tj=150C
V, I
30A H3 IGBT Turn-on
V ce =400V, R g =10.2 Ohm, T j =150C
2.5
Eon (mJ)
1.5
Ug ref
Uce ref
Ic ref
Ug dut
Uce dut
Ic dut
4
Si Diode
3
30A Emcon3
15A Emcon 3
16A SiC Diode
2.0
5
2
1
0
SiC Diode
-1
1.0
-2
0.5
-3
0.0
-5
-4
0
10
20
Ic (A)
30
40
50
0.1
0.2
0.3
Vce 80V/div, NP -4
Ic 5A/div, NP -4
Vgs 2V/div, NP -4
Vce [V]: 400 Rg [Ohm]: 10.2
Ice [A]: 20.02 Vge [V]: 15
0.4
0.5
0.6
0.7 t [µs]
Si diode
SiC diode
tdon [ns]: 15.2
tr [ns]: 16
tr Tang. [ns]: 21.6443
dUce/dt [V/ns]: -17.7125
dIc/dt [A/µs]: 740
Eon [mJ]: 0.3999
T [°C]: 150
Vce 80V/div, NP -4
Ic 5A/div, NP -4
tdon [ns]: 15.2
tr [ns]: 16.8
tr Tang. [ns]: 22.6275
dUce/dt [V/ns]: -17.8031
Rg [Ohm]: 10.2 dIc/dt [A/µs]: 712
Eon [mJ]: 0.7261
Vge [V]: 15
Vgs 2V/div, NP -4
Vce [V]: 400
Ice [A]: 20.14
T [°C]: 150
 SiC Diode provides 50% lower Eon losses of IGBT compared
to Emcon3 diode
 Based on requirements of target applications, the Emcon3
with ½ the rated current of IGBT was selected for the final
products
2017/7/31
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Page 14
PFC in-circuit test
 Continuos Current Mode PFC
 Vin = 115 ~ 230V
 Pout= 0-900W @60kHz
 Pout= 0-600W @100kHz
 Boost inductor L=1mH
 Clip mounting + Capton Foil for
HeatSink insulation
 Heatsink Temp. Control= 40°C
2017/7/31
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Page 15
Efficiency Comparison
Fs=60kHz
30A IGBTs in TO247
PFC In-circuit test
Uin115V; fsw= 60 kHz
Rgext=4.7ohm; Diode IDT06S60C
96.0
IKW30N60H3
95.5
IGBT comp C
Efficiency
95.0
+0.1 %
IGBT comp.D
94.5
IGBT comp. B
IGBT comp. A
94.0
-0.15 %
93.5
93.0
IKW30N60H3
IGBT Comp. A
IGBT Comp. B
IGBT Comp. C
IGBT Comp. D
92.5
0
200
400
600
800
1000
Pout[W]
 HighSpeed3 best result at light load, -0.15 % at full load
2017/7/31
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Page 16
Efficiency Comparison (cont‘)
Fs=100kHz
30A IGBTs in TO247
Efficiency
PFC In-circuit test
Uin115V; fsw= 100kHz
95.5
95.0
IKW30N60H3
94.5
94.0
93.5
93.0 +1.1% !!
92.5
92.0
91.5
91.0
90.5
90.0
89.5
89.0
0
100
Rgext=4.7ohm; Diode IDT06S60C
IGBT comp C
IGBT comp.D
-0.15%
IGBT comp. B
IGBT comp. A
IKW30N60H3
IGBT Comp. A
IGBT Comp. B
IGBT Comp. C
IGBT Comp. D
200
300
400
500
600
Pout[W]
 HighSpeed3 +1.1% at light load, -0.15% at full load
2017/7/31
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Page 17
Turn-off Waveform comparison
@115Vin, Pout=500W, 60kHz
IGBT Best competitor
IKW30N60H3
Ic=5A
Vce=400V
Vge=+15/0V
 Smooth switching waveforms
 Low dV/dt and dI/dt for reduced EMI
2017/7/31
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Page 18
Case temperature comparison
Case temp. Tc (°C)
Comparison of temperatur behaviour
Uin115V; Frequenz 60kHz; Rgext=4.7ohm; Diode IDT06S60C
130
125
120
115
110
105
100
95
90
85
80
75
70
65
60
55
50
45
IKW30N60H3
Best Competitor (comp. C)
Dt=13°C
100 Khz
60 Khz
0
100
200
300
400
500
600
700
800
900
Pout[W]
 Lower case temperature both at 60 and 100 kHz for improved
realibility and less cooling requirements
 Tjmax= 175°C for Infineon IGBT
2017/7/31
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Page 19
Rg reduction and EMI considerations
Turn-on dU/dt
Turn-off dU/dt
0
30
Highspeed3
IGBT3
25
-5
Highspeed IGBT2
FCS SFD
FCS UFD
dU/dt [V/ns]
dU/dt [V/ns]
20
-10
-15
Highspeed3
IGBT3
FCS SFD
FCS UFD
IR Warp
IR Warp
t=25°C
t=25°C
t=25°C
t=25°C
15
10
t=25°C
t=25°C
Highspeed IGBT2
-20
t=25°C
t=25°C
t=25°C
5
t=25°C
t=25°C
t=25°C
-25
0
0
10
20
30
40
50
0
10
Gatewiderstand [W ]
20
30
40
50
Gatewiderstand [W ]
 IFX devices show lower dV/dt during turn-on and turn-off
 Rg can be reduced from 33 Ohm to ~ 7 Ohm still maintaining
same or lower dV/dt and hence good EMI behaviour
2017/7/31
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Page 20
IGBT with FullPAK Base on High Speed3
Techology
 The new 30A IGBT FullPAK will be release soon.
Benefit of FullPak
 Many customers like this package because of the easier
mounting process
 The mounting process does not need any insulating foil and
bushing, thus providing cost saving and better reliability
NEW
Launched H2. 2010
2017/7/31
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Page 21
Summary
Infineon new High Speed3 IGBTs offer:
 Reduced switching losses without penalty of high conduction
losses
 Temperature stable behaviour
 Smooth switching waveforms allow to redeuce Rg and EMI.
 Easy paralleling (where required)
 Best-in-class devices for improved power densities in Solar,
UPS, Welding, SMPS applications
2017/7/31
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Page 22
Contents
IGBT overview
Infineon new high speed3 IGBT
Infineon RC-drives IGBT
Aircon split system with Infineon high speed3 & RC-drives IGBT
2017/7/31
Copyright © Infineon Technologies 2008. All rights reserved.
Page 23
New Innovation
Reverse Conducting Technology for Drives
Diode
IGBT
Emitter
Anode
Gate
+
Cathode
RC-IGBT
Emitter
Gate
=
Collector
Collector
 RC-Drives: Infineon now offers the free wheeling diode
monolithically integrated into the TRENCHSTOP IGBT-die for
hard switching applications
 Same DC current rating of diode and IGBT
 This leads to current classes [<15A] being available in new
package classes.
2017/7/31
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Page 24
How to improve the standard IGBTtechnology?
• Concept of thin wafer with Fieldstoptechnology reduces VCE(sat) dramatically
Emitter
Emitter
Gate
Gate
 Reduction of Conduction Losses for higher Efficiency and
improved thermal properties
n+
p+
 Reduction of Swtiching Losses for higher Efficiency
• Introduction of trench gate technology
reduces VCE(sat) further
n- (substrate)
 Reduction of Conduction Losses for higher Efficiency
n (fieldstop
(fieldstop))
Collector
Collector
p+
p
• Well established thinwafer technology
lowers VCE(sat) & Eoff furthermore
• Introduction of RC Diode technology
Copyright © Infineon Technologies 2008. All rights reserved.
2017/7/31
Infineon´s
TrenchStop ® -Technology
meets today tomorrow´s requirements
Page 25
Innovation Breakthrough
- Monolithically Integrated Diode
Key differentiators
 4A, 6A, 10A and 15A devices now
available in IPAK or DPAK

Major price advantage

Space saving
 Lowest Vce(sat) for low conduction
losses
D²PAK
DPAK
 Tj(max) = 175°C
Additional features
Wide range of turn-off/-on time controllability via gate resistor
Very good EMI behaviour thanks to smooth switching
5 us Short Circuit capability
2017/7/31
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Page 26
600V Product Family
TRENCHSTOP™ DuoPack™ & RC-Drives
TO-251
(I-PAK)
TO-252
(D-PAK)
TO-263
(D²-PAK)
TO-220
TO-262
TO-220
FULL-PAK
TO-247
Continuous
collector
current
at T C =100°C
DuoPack ™
Single IGBT
NEW
6A
10A
15A
20A
30A
50A
75A
4A
6A
10A
15A
20A
30A
50A
75A
NEW
RC-Drives
IKU04N60R
IKU06N60R
IKU10N60R
IKU15N60R
IKD04N60R
IKD06N60R
IKD10N60R
IKD15N60R
IGB10N60T
IGB15N60T
IGP06N60T
IGP10N60T
IGP15N60T
IGB30N60T
IGB50N60T
IGP30N60T
IGP50N60T
IKB06N60T
IKB10N60T
IKB15N60T
IKB20N60T
IKP04N60T
IKP06N60T
IKP10N60T
IKP15N60T
IKP20N60T
IGW30N60T
IGW50N60T
IGW75N60T
NEW
IKI04N60T
IKA06N60T
IKA10N60T
IKA15N60T
IKW20N60T
IKW30N60T
IKW50N60T
IKW75N60T
Comprehensive portfolio for hard switching applications
2017/7/31
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Page 27
Parameters of RC-Drives
Product Specifications
Part number
Package
Type
IKU04N60R
IKD04N60R
IKU06N60R
IKD06N60R
IKU10N60R
IKD10N60R
IKU15N60R
IKD15N60R
Inverter Output
power
BVces
Ic @
25°C
Ic @
100°C
Vceon @
175°C
Ets @
175C
Tsc
Vgeth
[W]
[V]
[A]
[A]
[V]
[mJ]
[usec]
[V]
200
600
8
4
1.9
0.21
5
5
600
600
12
6
1.9
0.3
5
5
1000
600
20
10
1.9
0.58
5
5
1500
600
30
15
1.9
1.22
5
5
Footprint
[mm²]
39
39
Height
[mm]
2.3
2.3
I-PAK
D-PAK
I-PAK
D-PAK
I-PAK
D-PAK
I-PAK
D-PAK
Power Density increase
Conventional
technology
TO220
D²PAK
2017/7/31
Footprint
[mm²]
157
106
Height
[mm]
4.5
4.5
RC-Drives
IPAK
DPAK
Copyright © Infineon Technologies 2008. All rights reserved.
Footprint
reduction
-75%
-63%
Height
reduction
-49%
-49%
Page 28
Example of Inverter Size Optimization
DPak vs D2PAK
DPAK needs
1/3 board
size of D2PAK
2017/7/31
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Page 29
RC-Drives
Major Customer Benefits
 Price

In combination with driver IC - discrete solution cheaper than
IPM
 Space

PCB size reduction

Increased flexibility of PCB layout
 Performance

Vce(sat) optimised and best Eoff balanced for low losses

Soft switching for low EMI levels

Excellent thermal behaviour with copper layer design

Tj(max) of 175°C
2017/7/31
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Page 30
Contents
IGBT overview
Infineon new high speed3 IGBT
Infineon RC-drives IGBT
Aircon split system with Infineon high speed3 & RC-drives IGBT
2017/7/31
Copyright © Infineon Technologies 2008. All rights reserved.
Page 31
Aircon split system
 A Dual motor kit reference design was developed both in surface
mount and straight leads version of RC-Drives:
15A RCDrives
Dpak
15A RCDrives
Ipak
6ED gate
driver
2017/7/31
4A RC-Drives
Dpak
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Page 32
Aircon split system
 Dual motor kit for 1 kW Aircon Split systems:
Compressor stage 1 kW with
6-channel EICEDRIVER and
15A RC-Drives IGBTs in DPAK
PFC switch with High speed
3 IGBT and Emcon boost
diode
XC165 16Bit MCU card
Fan stage 200W with
6-channel EICEDRIVER
and 4A RC-Drives IGBTs
in D-PAK
2017/7/31
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Page 33
Aircon split system:
compressor inverter D-pak version
Power meter
DC Brake
IR camera
 Inverter with
15ADpak IGBTs is
powered to drive an
1.5 kW AC motor +
brake system
AC Motor
 By adjusting DC brake and motor speed different output powers
are achieved
 The case temperature is monitored for different power levels
with an IR camera after steady state conditions
2017/7/31
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Page 34
Aircon split system:
compressor inverter D-pak version
 A plastic shield is added to
avoid any air flow from the
rotating shaft of the motor
may hit the Heatsink
2017/7/31
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Page 35
Aircon split system:
compressor inverter D-pak version
759 W Output  Tc,max= 66.7 °C
2017/7/31
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Page 36
Aircon split system:
compressor inverter D-pak version
1066 W Output  Tc,max= 84.5
°C
2017/7/31
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Page 37
Aircon split system:
compressor inverter D-pak version
1217 W Output  Tc,max= 99.4
°C
2017/7/31
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Page 38
Aircon split system:
compressor inverter D-pak version
Shield removed 
Slight air flow present
1225 W Output  Tc,max= 84.5
°C
2017/7/31
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Page 39
Aircon split system:
compressor inverter D-pak version
Compressor inverter- 15A Dpak
Case temperature Tc vs Output power
Case temperature Tc (°C)
105
100
Without Air flow
95
90
85
With slight air flow
80
75
70
65
60
700
800
900
1000
1100
1200
1300
Output power (W)
1.2 kW output power possible without forced air cooling !!
2017/7/31
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Page 40
Aircon split system:
Outdoor fan inverter D-pak version
Power meter
IR camera
Daikin
Outdoor fan
 Inverter with 4A
Dpak IGBTs is
powered to drive a
200W DC motor
 No Heatsink, no
forced air
 By adjusting motor speed different output powers are achieved
 The case temperature is monitored for different power levels
with an IR camera after steady state conditions
2017/7/31
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Page 41
Aircon split system:
outdoor fan inverter D-pak
Very non-uniform temp.
distribution
80°C
DC bus
cap
134.7°C
202 W Output  Tc,max= 134.7 °C
 The case temperature is strongly affected by the surroundings
 „Cool“ passive component acting as Heatsink
2017/7/31
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Page 42
Aircon split system:
effect of thermal convection
Board flipped 90
°C
134.7 °C
2017/7/31
-10 °C by
allowing
vertical airflow
on the back of
the board !!
Copyright © Infineon Technologies 2008. All rights reserved.
124.9
°C
Page 43
Approach to improve thermal – part I

Power loss generation

Ptotal = Pcon
+
Psw
duty cycle / motor type related

Switching speed influence much due
to cross over between current and
voltage, so it can be changed by
drive segment.
¬
RCIN
VSS
ITRIP
VB1,2,3
HO1,2,3
VS1,2,3
To
motor
LO1,2,3
COM
For example, smaller Rg at turn off
contribute to less switching loss. Or
anti-parallel diode in series with
smaller Rg if necessary. Take as an
example, Rg from 22 to 10 Ohm
contribute 0.1W less loss per switch on
60W DC fan at 16KHz .

fsw: proportional to Psw, lower fsw
the better, while need to consider
not to introduce audio noise.

Control scheme, e.g. more
conduction time at one leg;
sensorless FOC control using XC878
2017/7/31
VCC
HIN1,2,3
LIN1,2,3
FAULT
EN
6ED003L06-F
Irms * Vcesat
To/from controller
(600V)
Copyright © Infineon Technologies 2008. All rights reserved.
Page 44
Approach to improve thermal – part II
 Thermal dissipation
∆T= Ptotal * Rthja

Layout design
¬ Enlarge area of copper under
device as much as possible.
¬ More thickness of copper layer,
e,g from 1Oz to 2Oz.
¬ Put copper layer at both side,
meanwhile thermal vias
developed in between.
–the higher density the better

2017/7/31
Heatsink attached
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Page 45
Thermal Concept
 Thermal Concept for Sections
(1. Compressor-Inverter, 2. PFC and 3. Fan-Inverter)
 Optimized for lowest PCB-space usage and cost
Copper
PCB
RC-Drives
Thermal-Vias
Isolation Foil
Heatsink
10.02.2010
2017/7/31
Copyright
© Infineon
Technologies
2010.
rights
reserved.
Copyright
© Infineon
Technologies
2008.
All All
rights
reserved.
Page 46
PCB manufacturing
 Concept can follow several methods

Copper inlays (production limited and quite expensive concept).

Thermal Vias filled with synthetic resin to avoid solder voids at
RC-Drives Leadframe due to a flow through the vias.

Small drill holes (below 0.2 mm) for the thermal vias that are
filled during galvanisiation to avoid solder flow.
 Infineon recommend the small drill hole concepts since it‘s the most
cost effective solution due to easy production and adequate thermal
behaviour.
Copper Inlays (Ruwel GmbH)
10.02.2010
2017/7/31
Classical Thermal Vias with resin
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2010.
rights
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2008.
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Thin-Via-Concept (Small drill holes)
Page 47
Thermal conciderations of Thin-Via-Concept
 Small drill holes Board-Parameter:

d = 1 mm, r2 = 0.22 mm, r1 = 0.2 mm, lamda = 400W/K
Rth,via
d

2
2
   r2  r1



Rth,via = 95 K/W

The distance between the pads can be zero to have an
optimized heatspreading.
10.02.2010
2017/7/31
Copyright
© Infineon
Technologies
2010.
rights
reserved.
Copyright
© Infineon
Technologies
2008.
All All
rights
reserved.
Page 48
Thermal Concept
 15 A RCD
 The concept was tested successfully in the demoboard with Tj
< 150°C at Pinv = 1.5kW
10.02.2010
2017/7/31
Copyright
© Infineon
Technologies
2010.
rights
reserved.
Copyright
© Infineon
Technologies
2008.
All All
rights
reserved.
Page 49
Example Surface Mount: Dpak
Commercial
Fridge Compressor board
RC-Drives
Demoboard
D2-pak
D-pak
Board is flipped upside down and
screwed to the Metal „sheet“, acting as
Heatsink and ground connection
2017/7/31
Copyright © Infineon Technologies 2008. All rights reserved.
Page 50
Surface Mount
Thermal VIAS for improved heat dissipation
in case a HS is used
Example of Heatsink mounting
2017/7/31
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Page 51
Vertical insertion: I-pak
Washing machine board
Insulation foil +
Clips mounting with nuts and bolts.
2017/7/31
Copyright © Infineon Technologies 2008. All rights reserved.
Page 52
Summary
Infineon solution offer:
 Best-in-class devices for room saving, improved
power density
 High performance & price ratio
 Vce(sat) optimised and best Eoff balanced for low
losses
 Temperature stable behaviour
 Smooth switching waveforms to improve your EMI
performance.
2017/7/31
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Page 53
Infineon IGBT Nomenclature
I K D 04 N
60 R
S = Siemens
I = Infineon
Voltage (V/10)
Breakdown voltage
Device
D = Diode
K = hardswitching series
integrated diode
H = softswitching series
integrated diode
G = single diode
Package type
A = TO-220 FullPAK
B = TO-263
H = TO-220 “real two
leg”
D = TO-252 (D-PAK)
P = TO-220
I = TO-262 (I²-PAK)
U = TO-251 (I-PAK)
W = TO-247
Y = TO-247HC
2017/7/31
Technology
N = N-channel
P = P-channel
T = Trenchstop™ (only 1200V)
E = Emitter controlled Diode
S = SiC diode
Current class (A)
Nominal current @ 100°C
Specifications
Nothing stated = Fast IGBT (~20kHz/IGBT2)
HS = Highspeed (600V) (~80kHz/IGBT2)
H2 = Highspeed 2 (1200V) (~80kHz/IGBT2)
H3 = Highspeed 3 (1200V) (~80kHz/IGBT4)
T = TRENCHSTOP™ (~20kHz/IGBT3)
T2 = TRENCHSTOP™ 2nd gen. (~20kHz/IGBT4/Emcon4)
R = Reverse conducting (~60kHz/IGBT3)
R2 = Reverse conducting, 2nd gen. (~60kHz/IGBT3)
R3 = Reverse conducting, 3rd gen. (~60kHz/IGBT3)
Copyright © Infineon Technologies 2008. All rights reserved.
Page 54
2017/7/31
Copyright © Infineon Technologies 2008. All rights reserved.
Page 55