TXPI 1039 567 nm Light Emitting Diode

TXPI 1039
567 nm Light Emitting Diode
DESCRIPTION
FEATURES
This is a high radiance 567 nm Green LED optimized
for applications requiring high luminous intensity
and sunlight visibility.
ABSOLUTE MAXIMUM RATINGS
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567 nm Green
High luminous intensity, 100 mcd typical
High Reliability
Hermetic Package
12 Degree Half angle of light emission
Similar to 1N6611
Available screened to MIL-PRF-19500/521
Storage temperature............ -65oC to +125oC
Case operating temperature -65oC to +100oC
Lead solder temperature.... 260oC, 10 seconds
Continuous forward current........ 35 mA
Peak Forward Current................. 1 A \1
Reverse Voltage........................... 5 Volts
\1 1:sec pulse width, 300 Hz
OUTLINE DIMENSIONS
Tolerances are +/-0.005 inches, except as noted
Pinout
1. Cathode 2. Anode
The case is electrically isolated from the pins.
ELECTRO-OPTICAL CHARACTERISTICS (Case T = 25oC)
PARAMETER
Forward Voltage
Reverse Current
Half Angle at Half Power
Capacitance
Luminous Intensity 1
Luminous Intensity 2
Peak Wavelength
TEST CONDITION
If = 25 mA
Vr = 3V
Vr = 0 V, ƒ = 1 MHz
If = 25 mA, 0 degrees
If = 25 mA, 30 degrees
If = 25 mA
SYMBOL
Vf
Ir
21/2
C
Iv1
Iv2
8p
MIN
MAX
3.0
1.0
20
1.5
555
distributed by
Ohmstrasse 4
85716 Unterschleissheim
www.imm-photonics.de
TYP
2.3
Tel.: +49 89 3214120
Fax.: +49 89 32141211
[email protected]
12
100
100
567
580
UNIT
Volts
µA
DEG
pF
mcd
mcd
nm