Experience faster time to first fix
with GPS LNAs
Look at BGU7005, chapter 2.1
2. Focus applications & products
NXP RF applications:
http://www.nxp.com/rf
2.1 Get the fastest TTFF* with GPS LNA that use proven QUBiC4X SiGe:C
NXP GPS LNA BGU7005
Manufactured in NXP’s breakthrough QUBiC4X SiGe:C process technology and available in
the industry’s smallest package, this highly integrated GPS LNA reduces cost while delivering
better sensitivity, greater immunity against jamming signals, and higher linearity.
This LNA designed for GPS receiver applications, is produced
in NXP’s industry-leading QUBiC4X process, a 0.25-µm SiGe:C
technology. It has very low noise figures and superior linearity
performance, so it helps to improve overall sensitivity, which in
turn leads to faster Time-To-First-Fix (TTFF) and better tracking.
The proven QUBiC4Xi process improves overall RF performance
and means the LNAs are less expensive and offer higher, more
flexible performance than their GaAs counterparts.
Features
 Requires only 4 external components (including decoupling) to
build complete GPS front-end.
 Small, 6-pin SOT886 leadless package (1.45 x 1.0 x 0.5 mm)
 Requires only one external matching component
 Low current consumption (5 mA)
It restores sensitivity, provide greater immunity against outof-band cellular signals, reduce filtering requirements, and
lower overall cost. It can be placed close to the GPS antenna,
minimizing the noise figure. Additional gain amplifies the GPS
signal and raises the on-board signal-to-jammer ratio.
The GPS receiver can be put close to the primary phone antenna,
for the best GSM/UMTS performance, while the GPS antenna can
be placed far away. This improves antenna-to-antenna isolation
and results in higher performance.
 Low noise figure (NF): 0.9 dB at 1.575 GHz
 High insertion power gain: 16 dB at 1.575 GHz
 Low current consumption in power-down mode (<1 μA)
 ESD protection on all pins
 Supply voltage: 1.5 to 2.85 V, optimized for 1.8 V
The BGU7005 has an enable function. In power-down mode, it
consumes less than 1 µA.
 Proven, robust QUBiC4X SiGe:C process technology
(fT = 110 GHz)
* TTFF = Time-To-First-Fix
@ 1.575 GHz
supply
current
insertion
power gain
noise
figure
input power at 1 dB gain compression
Vcc
Icc
|s 21|2
NF
PI(1dB)
IP3i
V
mA
dB
dB
dBm
dBm
supply voltage
Type
Package
Min
BGU7005
34
SOT886
1.5
Max
2.85
Typ
Typ
5
NXP Semiconductors RF Manual 12th edition
16
Typ
0.9
Vcc = 1.8 V,
Min
Vcc = 1.8 V,
Typ
-14
-10
Vcc =
2.85 V,
Min
Vcc =
2.85 V,
Typ
-11
-8
input third-order intercept point
f1 = 1713 MHz, f2 = 1851 MHz
Vcc = 1.8 V,
Min
Vcc = 1.8 V,
Typ
5
10
Vcc =
2.85 V,
Min
5
Vcc =
2.85 V,
Typ
12
2.3 NXP wideband LNA MMIC BGU7003 in SiGe:C process
High-quality reception at high RF frequencies
Manufactured in NXP’s latest SiGe:C process, this high-frequency RF MMIC delivers high-quality
reception with extended battery life. It is a cost-effective, siliconbased alternative to GaAs devices,
and offers higher integration and easier design-in than discrete bipolar transistors.
The BGU7003 is designed for high-speed, low-noise mobile
applications. In GPS units, for example, it delivers high-quality
reception with maximum battery life. That means consumers
always know where they are, and can receive continuous
directions, between high rises and under heavy overcast
skies. It also means having a GPS device that can run for days,
instead of hours.
The BGU7003 gets its outstanding performance from NXP’s
innovative silicon-germanium-carbon (SiGe:C) BiCMOS
process, called QUBiC4X. This groundbreaking process
technology was designed specifically to meet the needs of
real-life, high-frequency applications and delivers an unrivalled
fusion of high power gain and excellent dynamic range.
It combines the performance of gallium-arsenide (GaAs)
technologies with the reliability of a silicon-based process.
Features
 Low-noise, high-gain microwave MMIC
 Minimum noise figure is 0.8 dB at 1.575 GHz
 Maximum stable gain = 20 dB at 1.575 GHz
 110-GHz fT-Silicon Germanium Carbon technology
 Optimized performance at low (5-mA) supply current
 ESD protection on all pins
 Extemely thin, leadless 6-pin SOT891 package
The BGU7003 includes an integrated bias generator that
simplifies the application and makes design-in easier. Biasing
is done away from the RF input line, and the device offers the
same full flexibility as the working range of the NXP BFU725F.
The bias adapts over temperature to ensure the gain is well
controlled. There is no matching on the die, and no limit to the
application area.
Benefits
 Integrated biasing and shutdown for easy integration
 Power-down mode consumes less than 1 μA
 Temperature-stabilized bias
Applications
 GPS
 E-metering
 WLAN and CDMA wireless communication
 Satellite radio
 Analog/digital cordless applications (DECT)
 Microwave communications systems
As the latest member of NXP’s growing SiGe:C portfolio, the
BGU7003 joins the highly successful BFU725F device. It is
available in a demo board that lets the designer evaluate noise
figures, gain, input and output reflection coefficients, and
reverse isolation.
Symbol
Parameter
Conditions
Typ
Unit
VCC
supply voltage
RF input AC coupled
2.5
V
ICC
supply current
3.3
5
mA
Gp(max)
maximum power gain
VCC= 2.5 V;ICC= 5.0 mA; f = 1.575 GHz; Tamb=25 °C
19
dB
NF
noise figure
VCC= 2.5 V;ICC= 5.0 mA; f = 1.575 GHz; S= opt
0.8
dB
PL(1dB)
output power at 1 dB gain compression
VCC= 2.5 V;ICC= 15.0 mA; f = 1.575 GHz; Tamb=25 °C
8
dBm
IP3O
output third-orderintercept point
VCC= 2.5 V;ICC= 15.0 mA; f = 1.575 GHz; Tamb=25 °C
18
dBm
36
NXP Semiconductors RF Manual 12th edition
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