CHAPTER 1 SEMICONDUCTOR METAL OXIDES AS HUMIDITY SENSORS This chapter introduces the inspiration of the thesis and describes the objective of the present investigations. It also explains the synthesis techniques of nanostructured materials, types of humidity sensors and requirement of humidity sensor along with experimental techniques. 1.1 Introduction Modern technology leans heavenly on the science of measurement. The control of industrial processes and automated systems would be very difficult without accurate sensor devices. The widespread use of microelectronics and computers is having a profound effect on the design of sensor systems. Nanoscience is defined as the study of phenomena and manipulation of materials at atomic, molecular and macromolecular scales, where properties differ significantly from those at a larger scale; and nanotechnologies as the design, characterisation, production and application of structures, devices and systems by controlling shape and size at the nanometere scale. The application of nanomaterials can be historically traced back to even before the generation of modern science and technology. Nanoscience and nanotechnologies are widely seen as having huge potential to bring benefits to many areas of research and application and are attracting rapidly increasing investments from Government and from business in many parts of the world. Nanoparticles were used as dye materials in ceramics by ancient people [1]; and colloidal gold was used in medical treatment for cure of dipsomania, arthritis etc. As early as from 19 countries; systematic experiments conducted on nanomaterials had also been started [2]. Material scientists and engineers now have a rapidly evolving ability to tailor materials from the atomic scale upwards to obtain desired properties. According to the demand of society, man discovered techniques for 1 Chapter 1 Semiconductor metal oxides as humidity sensors producing materials that had properties superior to those of the materials occurring in nature. The development of many advanced technologies makes the life easier. No doubt that there is tremendous progress in the discipline of materials science and engineering in the past few years, still there is a demand of even more sophisticated and specialized materials. In recent years nanotechnology has become one of the most important and exciting forefront fields in Physics, Chemistry, Engineering and Biology. It shows great promise for providing us in the near future with many breakthroughs that will change the direction of technological advances in a wide range of applications. Nanoscience and nanotechnology include the areas of synthesis, characterization, exploration, and application of nanostructured materials. The application of nanomaterials can be historically traced back to even before the generation of modern science and technology. Device miniaturization is also a significant factor for the development of nanotechnology. Nanoelectronic devices based on new nanomaterials systems and latest device structures will contribute to the development of next generation of microelectronics. For example, single electron transistor [3-4] and field effect transistor [5-7] based on single wall carbon nanotubes SW(NT) are already on the way. Proto type simple logic circuits of carbon nanotubes have already been demonstrated [8-11]. Investigations on nano systems, being widely interdisciplinary by their nature, promote the joining and merging of the various science and technologies such as powder technology, colloid chemistry, surface chemistry and physics, clusters, aerosols, tribology, catalysis, simulation and modelling, computer technique etc. 1.2 Nanomaterials Nanomaterial is a field that provides a material science-based approach to nanotechnology. It studies the materials with morphological features on the nanoscale and especially those that have special properties stemming from their nanoscale dimensions. Nanoscale is usually defined as smaller than a one tenth of a micrometer in at least one dimension. Nanomaterials is the study of how materials behave when their dimension are reduced to the nanoscale. The infinite possibilities that nanotechnology has on the production of nanomaterials is going to significantly alter the material world. 2 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.1: As everything nano, the field has been said real development… The term of nanomaterials covers different types of nanosturctured materials which posseses at least one dimension in the nanometer range. Nanomaterials have the structural features in between of those of atoms and the bulk materials. Comparing with bulk material, semiconducting nanomaterials can provide some special characteristics, which have been very useful to achieve various novel devices. As electrical, optical and chemical properties can be tuned with nanosized-particle in a wide range. Metal oxide semiconductors have attracted much attention on the sizedependent phenomenon. In recent years, metal oxide semiconductor nanoparticles received considerable attention as active components in a wide variety of basic research and technological applications due to their improved electric, optical and magnetic properties compared to their bulk counter-parts. The infinite possibilities that nanotechnology has on the production of nanomaterials is going to significantly alter the material world. Due to their nanometer size, nanomaterials are already known to have many novel properties. Due to their small dimensions, nanomaterials have extremely large surface area to volume ratio, which makes a large fraction of atoms of the materials to be on the surface or interfacial atoms, resulting in more surface dependent material properties. Especially when the sizes of nanomaterials are comparable to Debye length, the entire material will be affected by the surface properties of nanomaterials [12-13]. As with many new technologies, there seems to 3 Chapter 1 Semiconductor metal oxides as humidity sensors be a lack of complete understanding when it comes to how nanoparticles change the properties of materials. Over the past decade, nanomaterials have been the subject of enormous interest [14-17]. These materials, notable for their extremely small feature size, have the potential for wide-ranging industrial, biomedical, and electronic applications. As a result of recent improvement in technologies to see and manipulate these materials, the nanomaterials field has seen a huge increase in funding from private enterprises and government, and academic researchers within the field have formed many partnerships at individual and community levels. Nanomaterials can be metals, ceramics, polymeric materials, or composite materials. The variety of nanomaterials is great, and their range of properties and possible applications appear to be enormous, from extraordinarily tiny electronic devices, including miniature batteries, to biomedical uses, and as packaging films, superabsorbent, components of armor, and parts of automobiles. Figure 1.2 shows the rapid development due to nanotechnology. Figure 1.2: Rapid development due to nanotechnology. Nanoparticles are minute substances in the size range of 1-100 nanometers in all directions. Typically stable substances can become highly reactive and unstable when the particles become infinitesimal due to their extremely high surface to volume ratio. When the size of the particles reduces to less than 100nm and all the physical and other properties are significantly changed, then the group of particles is said as 4 Chapter 1 Semiconductor metal oxides as humidity sensors nanomaterials. There are few techniques to synthesize nanosized particles such as high energy ball-milling or sol-gel routes etc. Tremendous research works are going on across the world on preparations and characterizations of nanomaterials. The variety of nanomaterials is great, and their range of properties and possible applications appear to be enormous, from extraordinarily tiny electronic devices, including miniature batteries, to biomedical uses, and as packaging films, superabsorbants, components of armor, and parts of automobiles. General Motors claims to have the first vehicle to use the materials for exterior automotive applications, in running boards on its mid-size vans. Editors of the “Journal Science” profiled work that resulted in molecular-sized electronic circuits as the most important scientific development in 2001. It is clear that researchers are merely on the threshold of understanding and development, and that a great deal of fundamental work remains to be done. The properties of materials can be different at the nanoscale for two main reasons. First nanomaterials have relatively larger surface area when compared to the same mass of material produced in a larger form. This can make materials more chemically reactive and affect their strength or electrical properties. Second, the quantam effects can begin to dominate the behaviour of matter at the nanoscale, particularly at the lower end affecting the electrical, optical and magnetic behaviour of materials. Materials can be produced that are nanoscale in one dimension, in two dimension or in all three dimensions. Much of nanoscience and nanotechnologies are concerned with producing new or enhanced materials. Nanoscience and nanotechnologies are widely seen as having huge potential to bring benefits in areas as diverse as drug development, water decontamination, information and communication technologies, and the production of stronger, lighter materials. 1.3 Synthesis of Nanomaterials Synthesis methods play a very important role to control the size and surface area of nanomaterials. There are basically two broad areas of synthesis techniques for NSMs: (a) Chemical Methods/ Bottom up Approach (b) Physical Methods/ Top down Approach 1.3.1 Chemical Methods The advantage of chemical synthesis method is its versatility in designing and synthesizing new materials that can be refined into a final product. The chemical 5 Chapter 1 Semiconductor metal oxides as humidity sensors process offers over other methods a good chemical homogeneity by mixing the materials at molecular level. The major advantage of this method is to control size and surface area of the nanomaterials. There are several methods such as: (a) Precipitation methods: (i) Hydrothermal or Solvothermal Synthesis (ii) Emulsion Precipitation Method (iii) Co-Precipitation Method (iv) Sol-Gel Method In all these methods, nanoparticles are found to be in the form of precipitate. (b) Immobilization Methods (i) Citrate Complexation Gelation Method (ii) Penchini Method (iii) Low Temperature Combustion Method (a)Precipetation methods (i) Hydrothermal or Solvothermal Synthesis Hydrothermal technique is a promising alternative synthetic method because of the low process temperature and very easy to control the particle size. The hydrothermal process have several advantage over other growth process such as use of simple equipment, catalyst free growth, low cost, large area uniform production, environmental friendliness and less hazardous. The low reaction temperatures make this method an attractive one for microelectronics and plastic electronics. The method is based on the ability of water and aqueous solutions to dilute at high temperature (500ºC) and pressure (10-80 MPa, sometimes up to 300 MPa) substances practically insoluble under normal conditions: some oxides, silicates, sulphides. The main parameters of hydrothermal synthesis, which define both the processes kinetics and the properties of resulting products, are the initial pH of the medium, the duration and temperature of synthesis, and the pressure in the system. The synthesis is carried out in autoclaves which are sealed steel cylinders that can withstand high temperatures and pressure for a long time. Nanopowders are normally produced by means of either high temperature hydrolysis reactions of various compounds directly in the autoclave or hydrothermal treatment of reaction products at room temperature; the latter case is based on the sharp increase in the rate of crystallization of many amorphous phases in hydrothermal conditions [18-19]. In the first case the autoclave is loaded with 6 Chapter 1 Semiconductor metal oxides as humidity sensors aqueous solution of precursor salts, in the second case-with suspension of products derived from solution reactions flowing under normal conditions. There is normally no need to use special equipment and maintain a temperature gradient. Substantial enhancement of the hydrothermal method facilitates the use of additional external factors to control the reaction medium during the synthesis process. As of now, this approach is implemented in the hydrothermal-microwave, hydrothermal-ultrasonic, hydrothermal-electrochemical and hydrothermal-mechanochemical synthesis method. There are several advantages of hydrothermal method over conventional solid state methods. For example, compounds that have elements with an unusual oxidation state can be synthesized such as the formation of ferromagnetic chromium (IV) oxides. Cr2O3 + CrO3 350ºC, 440 bar 3CrO2 H2 O The hydrothermal method is also useful for synthesis of low temperature phases and metastable compounds by simply using quartz ampoules. Important advantage is that reactions do not require much time compared to conventional methods. For instance, although a solid-state reaction can be performed in a few weeks hydrothermal reaction can be done in a few days. Figure 1.3 shows high pressure, high temperature autoclave used for hydrothermal synthesis of quartz crystals. Figure 1.3: Vertical autoclave used for hydrothermal synthesis of quartz crystals. 7 Chapter 1 Semiconductor metal oxides as humidity sensors (ii) Emulsion Precipitation Method This method involves the preparation of thermally stable emulsion systems prepared by adding appropriate amounts of surfactants to a water oil system. Within the emulsion system, there are a small number of atoms per droplet. It is necessary that exchange of reactive species take place between droplets in order to form a stable precipitate. From the Einstein-Smoluchowski equation, the normal rate of the particle growth is faster than the equivalent rate of exchange between droplets. Therefore, the nucleation and growth in emulsions are retarded in comparison to those in homogeneous solution, avoiding the formation of large particles. Multisurfactants are effective in forming thermally stable emulsion and controlling droplet size. Other additives play a role as steric particle stabilizer after removal of water. Before the particle dispersion by filtration of decantation of the organic phase, the emulsions were prepared by mixing the oil phase (Cyclohexane or n-heptane) with tergitol surfactants and octan-1-ol as co-surfactant. To the system stoichiometric amounts of water were added followed by vigorous mixing until a translucent emulsion was formed. The emulsion was added drop wise to alcohol solutions of alkoxides and stirred for several hours. After removal of solvents in dispersion the residue was taken up in acetone to destroy the micelles. The solid product obtained after decantation of the organic phase was dried and transformed to nanocrystalline spinals after calcinations. This method provides the particular advantage of avoiding agglomeration of the particles formed in the individual bubbles. This in turn makes possible subsequent processing routes at unusually low temperatures [20-21]. To take full advantage of the method for multicomponent oxides precipitation routes need to be designed so that an intimate mixture of atoms is formed during precipitation and chemical homogeneity is maintained during subsequent processing. This offers special challenges since emulsion co-precipitations tend to be carried out with sample precursors that do not affect emulsion stability but generally show a tendency to precipitate at different rates leading to at least partial phase segregation. (iii) Co-Precipitation Method Solution precipitation depends on the precipitation of nanometre-sized particles within a continuous fluid solvent. An inorganic metal salt, such as chloride, nitride 8 Chapter 1 Semiconductor metal oxides as humidity sensors and so on, is dissolved in water. Metal cations exist in the form of metal hydrate species, for example, Al(H2O)3+ or Fe(H2O6)3+. These hydrates are added with basic solutions, such as NaOH. The hydrolyzed species condense and then washed, filtered, dried and calcined in order to obtain the final product. Co-precipitation proceeds in two stages. It begins with the entrapment of impurities during the growth of precipitate particles upon separation and concludes with the redistribution of the impurity between precipitate and medium. In the first stage, the impurity is trapped either on the surface (surface co-precipitation) or inside (volume co-precipitation) the growing particles. If the growing particles have a crystal structure, then in the case of volume co-precipitation the impurity will become localized either at regions of the solid phase with a perfect structure (isomorphism mixed crystal formation) or in the vicinity of structural defects. The transfer of impurities (trace constituents) to a precipitate concurrently with the deposition of some primary substances (macroscopic constituent) from a solution, melts, or vapours containing several substances. Coprecipitation occurs when a solution (vapour) is supersaturated with the substance forming the precipitate or when a melt is super cooled. Co-precipitation begins only at the end of a latent period. The length of this period can be prolonged from microseconds to tens of hours by altering the degree of super saturation (super cooling), the degree of mixing, and the purity and temperature of the medium from which the precipitate separates. Lots of investigations have been made to demonstrate novel methods for particle synthesis or to elucidate the mechanisms of particle formation [22]. Figure 1.4 shows schematic diagram of co-precipitation method. 9 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.4: Schematic diagram of co-precipitation method. (iv) Sol-Gel Method The sol-gel process is an wet-chemical technique widely used in the fields of materials science and ceramic engineering. Among different synthesis methods for preparation of oxide, sol gel method offers several advantages over other methods. As well as this method lowers the processing temperature, better homogeneity, controlled stoichiometry, and flexibility of forming dense monoliths, thin films, or nanoparticles. A crucial role in the sol-gel process is played by the processes of solvent removal from the gel. Depending on the method, the synthesis can result in various products like xerogels, aerogels, cryogels, ambigels whose properties are different. The common features of these products include the preservation of the nanosizes of the structural elements and sufficiently high values of specific surface area. Figure 1.5 shows the description of sol-gel method. 10 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.5: Description of sol-gel method. A sol is a dispersion of the solid particles (~ 0.1-1 μm) in a liquid where only the Brownian motions suspend the particles. A gel is a state where both liquid and solid are dispersed in each other, which presents a solid network containing liquid components. Some advantages of sol-gel technique are as follows: a) It can use to produce thin bond-coating to provide excellent adhesion between the metallic substrate and the top coat. b) Production of thick coating to provide corrosion protection performance is possible. c) It can easily shape materials into complex geometries in a gel state. d) Can produce high purity products because the organo-metallic precursor of the desired ceramic oxides can be mixed, dissolved in a specified solvent and hydrolyzed into a sol, and subsequently a gel, the composition can be highly controllable. e) Can have low temperature sintering capability, usually 200-600ºC. f) Also it provide a simple, economic and effective method to produce high quality coatings. Despite its advantages, sol-gel technique never arrives at its full industrial potential due to some limitations, e.g. weak bonding, low wear-resistance, high permeability and difficult controlling of porosity. Such methods are used primarily for the fabrication of materials (typically metal oxides) starting from a colloidal solution 11 Chapter 1 Semiconductor metal oxides as humidity sensors (sol) that acts as the precursor for an integrated network (or gel) of either discrete particles or network polymers. Typical precursors are metal alkoxides and metal salts such as chlorides, nitrates and acetates, which undergo various forms of hydrolysis and polycondensation reactions. In this chemical procedure, the 'sol' (or solution) gradually evolves towards the formation of a gel-like diphasic system containing both a liquid phase and solid phase whose morphologies range from discrete particles to continuous polymer networks [23-24]. In the case of the colloid, the volume fraction of particles (or particle density) may be so low that a significant amount of fluid may need to be removed initially for the gel-like properties to be recognized. The simplest method is to allow time for sedimentation to occur, and then pour off the remaining liquid [25-26]. Centrifugation can also be used to accelerate the process of phase separation. Removal of the remaining liquid (solvent) phase requires a drying process, which is typically accompanied by a significant amount of shrinkage and densification. The rate at which the solvent can be removed is ultimately determined by the distribution of porosity in the gel. The ultimate microstructure of the final component will clearly be strongly influenced by changes imposed upon the structural template during this phase of processing. Most products of sol-gel synthesis are used as precursors in obtaining nanopowders, thin films and ceramics. The sol-gel method has some advantages e.g. good uniformity and better controlled composition over other ones. (b)Immobilization Methods (i) Citrate Complexation Gelation Method In citrate gel methods, metal ions are stabilized by an organic network in precursor solutions, thus fine oxide powders are obtained after a heating process [27]. They have the ability of preparing multi-component compositions with good homogeneity and control of stochiometry. These methods utilize poly-chelates between the C-O legends of citric acid and metal ions. The chelates undergo polyesterification on heating with a polyfunctional alcohol. In the citrate method the chelating process takes place during the evaporation of the precursor solution containing metallic salts and citric acid. Further heating produces a viscous resin, and a rigid transparent, glassy gel. Mixtures of different metal ions become immobilized in an early stage of the formation of this rigid system [28]. This greatly reduces the risk of segregation into different oxide compositions during subsequent calcinations. 12 Chapter 1 Semiconductor metal oxides as humidity sensors (ii) Penchini Method Penchini method is a method of synthesis of highly homogeneous and finely dispersed oxide materials including formation of complexes and production of polymer gel as an intermediate product. The method is based on an intensive blending of positive ions in a solution, controlled transformation of the solution into a polymer gel, removal of the polymer matrix and development of an oxide precursor with a high degree of homogeneity. During the synthetic process, metal salts or alkoxides are introduced into a citric acid solution with ethylene glycol [29-31]. The formation of citric complexes is believed to balance the difference in individual behavior of ions in solution, which results in a better distribution of ions and prevents the separation of components at later process stages. The polycondensation of ethylene glycol and citric acid starts above 100ºС, resulting in polymer citrate gel formation. When the heating temperature exceeds 400ºС, oxidation and pyrolysis of the polymer matrix begin, which lead to the formation of X-ray amorphous oxide or carbonate precursor. Further heating of this precursor results in the formation of the required material with a high degree of homogeneity and dispersion. Today this method is widely used in the synthesis of dielectric, fluorescent and magnetic materials, high temperature superconductors and catalysts as well as for the deposition of oxide films and coatings. Main advantages include its relative simplicity, almost complete independence of the process conditions from the chemistry of positive ions contained in the final material and a relatively low temperature of precursor treatment, due to which the process may occur almost completely without sintering, resulting in the production of nanocrystal powders of refractory oxides. (iii) Low Temperature Combustion Methods The low temperature combustion synthesis (LCS) technique has proved to be a novel, extremely facile, timesaving and energy-efficient route for the synthesis of ultra fine powders [32]. This is based on gelling and subsequent combustion of an aqueous solution containing salts of the desired metals and some organic fuels, giving a voluminous and fluffy product with large surface area. Oxidizing metal salts such as metal nitrates, and a combination agent (fuel) such as citrate acid, polyacrylic acid or urea are used as starting materials. Citrate acid is more widely used, since it not only functions as a reductant/fuel agent, but also a chelating agent. The molar ratio of fuel to nitrates in the initial mixture imposes a great influence on calcination condition and 13 Chapter 1 Semiconductor metal oxides as humidity sensors the subsequent characteristics of the synthesized crystallites. By controlling the CA/NO3 ratio and calcination temperature, homogeneous crystalline spinel powders are prepared with a nanoscale primary particle size [33]. 1.3.2 Physical Methods Several physical methods are currently in use for the synthesis and commercial production of NSMs. Few are given as below: 1.3.2.1 Gas Condensation Gas condensation was the first technique used to synthesize nanocrystalline metals and alloys. In this technique, a metallic or inorganic material is vaporized using thermal evaporation sources such as a Joule heated refractory crucibles, electron beam evaporation devices, in an atmosphere of 1-50 m bar. In gas evaporation, a high residual gas pressure causes the formation of ultra fine particles (100 nm) by gas phase collision. The ultrafine particles are formed by collision of evaporated atoms with residual gas molecules. Gas pressures greater than 3 mPa are required. Vaporization sources may be resistive heating, high energy electron beams, low energy electron beam and inducting heating. Clusters form in the vicinity of the source by homogenous nucleation in the gas phase grew by incorporation by atoms in the gas phase. It comprises of a ultra high vacuum (UHV) system fitted evaporation source, a cluster collection device of liquid nitrogen filled cold finger scrapper assembly and compaction device. During heating, atoms condense in the super saturation zone close to Joule heating device. The nanoparticles are removed by scrapper in the form of a metallic plate. Evaporation is to be done from W, Ta or Mo refractory metal crucibles. If the metals react with crucibles, electron beam evaporation technique is to be used. The method is extremely slow. The method suffers from limitations such as a source-precursor incompatibility, temperature ranges and dissimilar evaporation rates in an alloy. Alternative sources have been developed over the years. For instance, Fe is evaporated into an inert gas atmosphere (He). Through collision with the atoms the evaporated Fe atoms loose kinetic energy and condense in the form of small crystallite crystals, which accumulate as a loose powder. Figure 1.6 shows schematic diagram of the gas condensation method. 14 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.6 1.3.2.2 Sputtering Method Sputtering or laser evaporation may be used instead of thermal evaporation. Sputtering is a non-thermal process in which surface atoms are physically ejected from the surface by momentum transfer from an energetic bombarding species of atomic/molecular size. Typical sputtering uses a glow discharge or ion beam. Interaction events which occur at and near the target surface during the sputtering process in magnetron sputtering has advantage over diode and triode sputtering. In magnetron sputtering, most of the plasma is confined to the near target region. Other alternate energy sources which have been successfully used to produce clusters or ultra fine particles are sputtering electron beam heating and plasma methods. Sputtering has been used in low pressure environment to produce a variety of clusters including Ag, Fe and Si. Figure 1.7 shows schematic diagram of sputtering method. 15 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.7: Diagram of sputtering method. 1.3.2.3 Chemical vapor deposition Method Chemical vapor deposition (CVD) is a chemical process used to produce highpurity, high-performance solid materials. The process is often used in the semiconductor industry to produce thin films. In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and decompose on the substrate surface to produce the desired deposit. Frequently, volatile by-products are also produced, which are removed by gas flow through the reaction chamber. CVD involves the formation of nanomaterials from the gas phase at elevated temperatures usually onto a solid substrate or catalyst. In this approach, vapour phase precursors are brought into a hot-wall reactor under conditions that favour nucleation of particles in the vapour phase rather than deposition of a film on the wall. It is called chemical vapour synthesis or chemical vapor condensation in analogy to the chemical vapour deposition (CVD) processes used to deposit thin solid films on surfaces. This method has tremendous flexibility in producing a wide range of materials and can take advantage of the huge database of precursor chemistries that have been developed for CVD processes. The precursors can be solid, liquid or gas at ambient conditions, but are delivered to the reactor as a vapor (from a bubbler or sublimation source, as necessary). When a mixture of gas reactants are delivered into a reaction chamber, the chemical reactions among the gas molecules are induced by an input of energy such as resistant heating, laser, and plasma. Chlorides are popular reactants for the 16 Chapter 1 Semiconductor metal oxides as humidity sensors formation of oxides because of their generally low vaporization temperature and low cost. The typical reaction is as following: SnCl4 (gas) + 2H2O (gas) → SnO2 (solid) + 4HCl (gas) Another key feature of chemical vapor synthesis is that it allows formation of doped or multi-component nanoparticles by use of multiple precursors. Schmechel et al. prepared nanocrystalline europium doped yttria (Y2O3:Eu3+) from organometallic yttrium and europium precursors. Senter et al. incorporated erbium into silicon nanoparticles using disilane and an organometallic erbium compound as precursors. Srdic et al. prepared zirconia particles doped with alumina. The powders exhibit a narrow size distribution with an average size of about 5 nm. Advantages of CVD are high growth rate, can deposit materials which are hard to evaporate, have good reproducibility and can grow epitaxial films. Figure 1.8 shows the description of CVD method. Figure 1.8: Description of chemical vapour deposition method. 1.3.2.4 Ball Milling Ball milling is a method of production of nano materials. This process is used in producing metallic and ceramic nano materials. These mills are equipped with grinding media composed of wolfram carbide or steel. A ball mill consists of a hollow cylindrical shell rotating about its axis. The axis of the shell may be either horizontal or at a same angle with the horizontal. The grinding media is the ball which may be made of steel, stainless steel or rubber. The inner surface of the cylindrical shell is usually line with an abrasion-resistant material such as manganese steel or rubber. Ball mills rotate around a horizontal axis, partially filled with the material to be ground plus the grinding medium. The balls rotate with high energy inside a drum 17 Chapter 1 Semiconductor metal oxides as humidity sensors and then fall on the solid with gravity force and crush the solid into nano crystallites. The significant advantage of this method is that it can be readily implemented commercially. Ball milling can be used to make carbon nanotubes and boron nitride nanotubes. It is a preferred method for preparing metal oxide nano crystals like Cerium (CeO2) and Zinc Oxide (ZnO). Figure 1.9 shows diagram of deformations in the material trapped between two colliding balls during ball milling. Figure 1.9: Deformations in the material trapped between two colliding balls during ball milling. 1.4 Film Preparation Technique Now a day the study and application of thin film technology is entirely entered in to almost all the branches of science and technology due to rapid development of Nanotechnology. Tin oxide thin films have some very beneficial properties, such as transparency for visible light, reflectivity for infrared light, and a low electrical sheet resistance, making them suitable for a wide variety of applications such as in transistors (Arnold et al 2003), photovoltaic cell (Cachet et al 1997), gas sensors (Butta et al 1992), Protective and wear resistant coating on glass containers (Nakagawa et al 1997), Infrared reflectors for glass windows (Lindner 1988) etc. There are many methods are used to synthesize doped or un-doped tin oxide films 18 Chapter 1 Semiconductor metal oxides as humidity sensors such as Thermal Evaporation (Comini et al 2002, Vaishnay et al 2005), Chemical Vapor Deposition (Gorley et al 2005, Mamazza et al 2005), R.F. Magnetron Cosputtering (Jeorg et al 2006, Yoo et al 2005), Laser Pulse Evaporation (Yang and Cheung 1982, Hui et al 2002), Spray Pyrolysis (Pirmoradi et al 2011, Lane et al 1992) and sol-gel (Culha et al 2009). Several deposition techniques have been developed to grow undoped and doped SnO2 films such as sputtering [34-35], sol-gel [36-37], chemical vapor deposition (CVD) [38], sonochemical processing [39-41] and thermal evaporation [42] spray pyrolysis, evaporation, chemical vapor deposition, sol gel technique, magnetron sputtering pulsed laser deposition and screen printing technique. The production of sensing layers by screen-printing technology has met the great interest in this field. In fact, screen-printing is a simple and automated manufacturing technique that allows the production of low cost and robust chemical sensors with good reproducibility. Such technique allows the deposition of a controlled amount of paste. Thick films are suitable for such sensors since the humidity sensing properties are related to the material surface and the vapours are always adsorbed and react with the films surface. Figure 1.10 shows the basic screen printing process. Figure 1.10: The basic screen printing process. 19 Chapter 1 Semiconductor metal oxides as humidity sensors 1.5 What is Sensor? In practice, the words sensor and transducer are used interchangeably, although the former more accurately describes the device and latter the principle involved. A transducer is a device that transfers energy between two systems as in the conversion of thermal into electrical energy by the Seebeck-effect thermocouple. Figure 1.11 describes a basic sensor circuit and its relationship to the measurement quantity. The twelve descriptive parameters applicable to sensors are as follows: 1. Accuracy: The closeness with which a measurement approaches the true value of a measurand, usually expressed as a percent of full-scale output. 2. Error: The deviation of a measurement from the true value of a measurand, usually expressed as a percent of full-scale output. 3. Precision: An expression of a over some span described by the number of significant figures available. 4. Resolution: An expression of the smallest quantity to which a quantity can be measured. 5. Span: An expression of the extent of a measure between any two limits. 6. Range: An expression of the total extent of possible measurement values. 7. Reproducibility: It is the ability of an entire experiment or study to be reproduced. 8. Ageing Effect: It is the effect which we see after some time on sensing material. 9. Response and Recovery Time: The time lag between initial and first change occurring in output is taken as response and recovery time. 10. Stability: The sensing material should be stable over long time. 20 Chapter 1 Semiconductor metal oxides as humidity sensors Excitation Measurand Sensor Transducer principle Interface Circuit Output Signal Figure 1.11: Sensor Circuit Elements According to Gopel and Schierbaum [43] “sensors are devices that receive a signal or stimulus and responds with an electrical signal”. Sensors are key elements in the rapidly evolving fields of measurements, instrumentations and automated systems. The recent progresses made in improving the reliability, lowering the cost of microprocessors and interface circuits has resulted in a higher demand for sensors, which convert physical or chemical quantities in various environments into electrical signal. Different functions and materials have been investigated, and several devices have been put on the market or have become part of sophisticated instrumentations [44]. Among these materials, functional ceramics have played a major role because of their intrinsic characteristics: they are superior in mechanical strength and chemical resistance in most environments and in the reproducibility of the electrical properties. They have also been widely used to satisfy diverse needs for sensing devices, and consistent results have been obtained in the field of atmospheric sensors, i.e., temperature [45], humidity [46-51] and gas sensors [52]. Mainly sensor is divided into two domains: the physical transducer and the interface layer. At the interface the analyte interacts with a surface, producing a change in physical/chemical properties. These changes are measured by the transducer domain and generate a related electrical signal. The actual sensing process consists of three different parts: receptor, transducer and operation mode [43]. The receptor is the surface of the metal oxide where species undergo adsorption, reaction and desorption. The adsorption of species on a solid has been divided into physisorption and chemisorption. A molecule is considered to be chemisorbed if there is an electronic transfer between humidity and solid and whereas there is no transfer in the case of physisorption. Ideally, the interaction of the gaseous molecules will induce a change in the depletion layer of the 21 Chapter 1 Semiconductor metal oxides as humidity sensors metal oxide grain. These changes are transduced into an electrical signal depending on the microstructure of the sensitive film (the transducer). The porosity of the film, the grain size and the different grain intersection will determine the output signal, which takes into account the whole sensitive layer. This output single in usually electric, although the measurement of the thermo voltage or the change in the sensor temperature is also possible. 1.6 Requirements of a Humidity Sensor For designing a robust humidity sensor, the sensor material should possess qualities as under: a) The material should have high sensitivity over a wide range of humidity and temperature. b) The device should also have good stability and reversibility. c) There should not be any hysteresis in the characteristics. d) The sensitivity should be independent of the ambient temperature. e) Numerous materials have been utilized for humidity sensing of which the metal oxides are physically and chemically stable and used at both room and elevated temperatures. f) The reliability of humidity sensors is affected by many environmental factors such as contamination due to oil, dust and other materials in air. g) It should have a short response and recovery times. h) It should be less portable. i) It should be resistive to contaminants. j) It should have good mechanical properties and durability. 1.7 Humidity: Definition and Properties Humidity is the amount of moisture that exists in the air. a day will be. There are various ways, which define humidity in atmosphere. Few of them are given as below: 1.7.1 Absolute Humidity Absolute humidity is the ratio of mass of water vapor to unit volume of total air and water vapor mixture can be expressed as follows: 𝑨𝑯 = 𝑴𝒘 𝑽𝒏𝒆𝒕 22 Chapter 1 Semiconductor metal oxides as humidity sensors Where AH is absolute humidity, Mw is mass of water vapor, Vnet is total air and water vapor mixture. 1.7.2 Relative Humidity Relative humidity is the ratio of the partial pressure of water vapor in air-water mixture to the saturated vapor pressure of water at prescribed temperature. RH is a function of temperature, and thus it is a relative measurement. Relative humidity is defined as below: %𝑹𝑯 = 𝑷𝒗 × 𝟏𝟎𝟎 𝑷𝒔 Where Pv is partial pressure and Ps is saturated vapor pressure. 1.7.3 Specific Humidity Specific humidity is the ratio of water vapor to dry air in a particular mass, and is sometimes referred to as humidity ratio. Specific humidity is expressed as a ratio of mass of water vapor Mv per unit mass of dry air Ma. This quantity is also known as the water vapor "mixing ratio". 𝑺𝑯 = 𝑴𝒗 𝑴𝒂 Where SH is specific humidity, Mv is mass of water vapor and Ma is mass of dry air. 1.8 The Role and Applications of Humidity Sensors Humidity plays very important role in human life. Different applications of humidity in different fields are as follows: a) There are many domestic applications, such as intelligent control of the living environment in buildings, cooking control for microwave ovens and intelligent control of laundry etc. b) In automobile industry, humidity sensors are used in rear window defoggers and motor assembly lines. c) In medical field, humidity sensors are used in respiratory equipment, sterilizers, incubators, pharmaceutical processing and biological products. d) In agriculture, humidity sensors are used for green-house air-conditioning, plantation protection (dew prevention), soil moisture monitoring and cereal storage. 23 Chapter 1 Semiconductor metal oxides as humidity sensors e) In general industry, humidity sensors are used for humidity control in chemical gas purification, dryers, ovens, film desiccation, paper and textile production and food processing. f) They may be used in homes for people with illnesses affected by humidity, as part of home heating, ventilating, and air conditioning (HVAC) systems and in humidors or wine cellars. Humidity sensors can also be used in cars, office and industrial HVAC systems, and in meteorology stations to report and predict weather. g) A person with a respiratory illness or certain allergies might use a home humidity sensor because low humidity can exacerbate breathing problems and cause joint pain, while high humidity encourages bacteria, mould and fungus growth. h) Humidity sensors can also be used in homes or museums where valuable antiques or artwork are kept, because these items can be damaged or degraded from constant exposure to too much moisture. 1.9 Methods for Humidity Measurement There are various methods for measurement of humidity. Most of them using a device called a hygrometer. The hygrometer can work in a variety of ways, depending on the type, and is the most accurate method for determining the humidity in the air. Some are connected to other devices called humistats, which are connected to humidifiers and dehumidifiers, and help control the level of humidity in the air. The psychrometer also known as the two-bulb hygrometer which works by using two thermometer bulbs. One bulb is dry that measures the temperature in the air. The other bulb is covered in a substance, usually wick or muslin and then wetted down. After being wetted, the bulb is exposed to moving air, either through a fan or by slinging the psychrometer through the air. As the water evaporates in the moving air, the temperature on the thermometer will drop. The amount the temperature drops helps to tell the amount of humidity in the air. Electric hygrometers work by measuring the electrical resistance of a particular substance. Most substances such as lithium chloride have varying resistances to an electrical current based on the humidity in the air. These differences are then calculated to display the humidity. 24 Chapter 1 Semiconductor metal oxides as humidity sensors Chemical hygrometers work by using a chemical substance and exposing it to air. The chemical will be measured before being exposed and then again after. Any changes in weight indicate how much humidity is in the air. The polymeric type hygrometer consists of a capacitor with a hygroscopic polymer dielectric. The difference in relative dielectric constants between the polymer and the water generates a considerable variation in capacitance when water is absorbed. A gravimetric humidity sensor is the quartz crystal microbalance. Thin plates of piezoelectric quartz have resonance frequencies in the MHz-range. Coated with hygroscopic layer, the change of frequency acts as a measure for the humidity. 1.10 Resistive Humidity Sensor: Working Principle Material conductivity varies with amount of water absorbed by it. This principle is employed for the measurement of humidity in resistance type humidity sensors. For dependence of conduction mechanism this type of sensor can be subdivided into two parts: 1.10.1 Electronic Type Humidity Sensor 1.10.2 Ionic Type Humidity Sensor 1.10.1 Electronic Type Humidity Sensor Some semiconducting oxides or composite oxides such as SnO2, ZnO, and In2O3, etc. are wide-band gap semiconductors. H2O is adsorbed on the oxide surface in molecular and hydroxyl forms. Water molecules are observed to increase the conductivity of n-type semiconductor and to decrease the conductivity of p-type semiconductor [53-54]. This effect has been attributed to the donation of electrons from the chemically adsorbed water molecules to the ceramic surface [53]. Because the conductivity is caused by the surface concentration of electrons, this sensing style is usually called “electronic type”. However, the water layer formed by the physical adsorption may be somewhat proton conductive. Therefore, at room temperatures the conductivity of ceramic semiconducting materials is actually due to addition of both electrons and protons (ionic), unless at high temperatures (>100ºC) moisture cannot effectively condense on the surface. In Figure 1.12 (a), the conductivity increment is produced by surface electron accumulation resulting from the preferential alignment of the water dipoles [53]. Hydrogen atoms contact the surface (mostly at the oxygen sites) and attract electrons outward. In Figure 1.12 (b) a depletion region forms 25 Chapter 1 Semiconductor metal oxides as humidity sensors originally due to adsorbed oxygen and the released electrons may neutralize the depletion. Figure 1.12: Two possible mechanisms for the “donor effect” (for n-type): (a) Electrons are attracted by the adsorbed water molecules to the semiconductor surface and the energy bands are bended (b) Electrons are released by the competitive adsorption. Since adsorbed water molecules increase the conductivity of n-type ceramic semiconductors, nearly humidity sensitivity is greatly dependent on adsorption and ionization of outer molecular water as well as ionic transport on material [55-57]. With the increase of humidity, the adsorbed water makes the surface conductivity increase due to increased charge carriers. If every phase has good humidity sensitivity, the total sensing property will be increased; otherwise, sensing property will be decreased. Moreover, grain boundary can increase sensing property because it introduces many crystal defects which improve the ionization of outer molecular water. Likewise decreased granularity has the same effect as increasing the boundary area. On the other hand, if other ions segregate onto boundaries and inhibit adsorption and ionization of water molecules, the sensitivity will be deteriorated. In semiconductor, proton is the dominant carrier responsible for the electrical conductivity. The conduction is due to the Grotthuss mechanism, through which protons tunnel from one water molecule to the next via hydrogen bonding that universally exists in liquid-phase water shown in Figure 1.13. This sensing mechanism was reported about 200 years ago [58]. The mechanism of protonic conduction inside the adsorbed water layers on the surface of the sensing materials 26 Chapter 1 Semiconductor metal oxides as humidity sensors was discovered in study of TiO2 and α-Fe2O3 [59-60]. As shown in Figure 1.14, at the first stage of adsorption, a water molecule is chemically adsorbed on an activated site (a) to form an adsorption complex (b), which subsequently transfers to surface hydroxyl groups (c). Then another water molecule comes to be absorbed through hydrogen bonding on the two neighbouring hydroxyl groups as shown in (d). Figure 1.13: Brief illustration of Grotthuss mechanism. Figure 1.14 The top water molecule condensed cannot move freely due to the restriction from the two hydrogen bonding as shown by Figure 1.14 (d). Thus, this layer or the first physically-adsorbed layer is immobile and there are not hydrogen bonds formed between the water molecules in this layer. Therefore, no proton could be conducted in this stage. As water continue to condense on the surface of semiconductor, an extra layer on top of the first physically adsorbed layer forms. This layer is less ordered than the first physically-adsorbed. For example, there may be only one hydrogen bond locally. If more layers condense, the ordering from the initial surface may gradually disappear and protons may have more freedom to move inside the condensed water through the Grotthuss mechanism shown in Figure 1.15. In other words, from the second physisorbed layer, water molecules become mobile and finally almost identical to the bulk liquid water, and the Grotthuss mechanism becomes dominant. This mechanism indicates that sensors based purely on water-phase protonic 27 Chapter 1 Semiconductor metal oxides as humidity sensors conduction would not be quite sensitive to low humidity, at which the water vapour could rarely form continuous mobile layers on the sensor surface. Since the mechanism of humidity sensors is mainly associated with adsorption desorption processes, the surface area of the sensors becomes an important factor to determine the sensing properties. The porosity can enhance the surface area and therefore the porous materials are considered as better sensing materials. Figure 1.15: Mechanism of water adsorption on electronic humidity sensor. 1.10.2 Ionic Type Humidity Sensor In ionic-type humidity sensors, the conduction mechanism is mainly due to the displacement of protons between the water molecules. Arai et al explains that the conduction mechanism depends on the surface coverage of adsorbed water. Hopping of H+ is predominant when the physisorbed HO is absent or very little. When water is present but the coverage of the surface is not complete, H3O+ diffusion dominates. When the H2O is abundant, the proton-transfer process dominates. Finally, at higher RH, capillary condensation takes place in the pores according to the Kelvin equation and the conduction mechanism becomes electrolytic. rk = 𝟐𝑴𝜸 𝑷𝒔 𝑷 𝝆𝑹𝑻 𝑰𝒏 ( ) In the expression, rk is the Kelvin radius of the micropores, γ, ρ and M are the surface tension (72, 75 dyn/cm at 20ºC), the density, and the molecular weight of water, P is partial vapour pressure, Ps is the vapor pressure at saturation. The saturation corresponds to the capillary condensation in the pores and, under a constant P and temperature, takes place in all the pores with radii up to rk. The smaller the value of rk, the more easily it takes place. The capillary condensation is an important factor in ionic-type humidity sensors. For ionic sensing materials, if the humidity increases, the conductivity decreases and the dielectric constant increases [61-62]. 28 Chapter 1 Semiconductor metal oxides as humidity sensors 1.11 Characterization Techniques: 1.11.1 X-Ray Diffraction The X-ray diffraction pattern of a pure substance is like a fingerprint of the substance. The powder diffraction method is thus ideally suited for characterization and identification of polycrystalline phases. The main use of powder diffraction is to identify components in a sample by a matching procedure. Furthermore, the areas under the peak are related to the amount of each phase present in the sample. Solid matter can be described as: Amorphous: The atoms are arranged in a random way similar to the disorder as find in a liquid. Glasses are amorphous materials. Crystalline: The atoms are arranged in a regular pattern, and there is as smallest volume element that repeated in three dimensions which describes the crystal. X-ray Diffraction (XRD) is a high-tech, non-destructive technique for analyzing a wide range of materials, including fluids, metals, minerals, polymers, catalysts, plastics, pharmaceuticals, thin-film coatings, ceramics, solar cells and semiconductors. X-ray diffraction is a technique used to characterize the crystallographic structure, crystallite size and preferred orientation in polycrystalline or powdered solid samples. An electron in an alternating electromagnetic field will oscillate with the same frequency as the field. When an X-ray beam hits an atom, the electrons around the atom start to oscillate with the same frequency as the incoming beam. In almost all directions we will have destructive interference, i.e. the combining waves are out of phase and there is no resultant energy leaving the solid sample. However the atoms in a crystal are arranged in a regular pattern, and in a very few directions we will have constructive interference. The waves will be in phase and there will be well defined X-ray beams leaving the sample at various directions. Hence, a diffracted beam may be described as a beam composed of a large number of scattered rays mutually reinforcing one another. We have used XRD to determine the composition of our Tin oxide based samples. XRD works by using a beam of X-rays directed at a sample to detect the bond lengths. After the sample is loaded, the beam of X-rays moves around the sample from 10 to 90º then using Bragg’s law the bond length can be calculated. Bragg’s law states that when a multiple of the wavelength is divided by twice the bond length it is equal to the sine of the angle i.e. 29 Chapter 1 Semiconductor metal oxides as humidity sensors λ = 2d Sinθ λ: wavelength of the X-rays d: the spacing of the layers Figure: 1.16 θ: the incident angle of the photons. 1.11.1.1 The Debye-Scherrer Formula Figure 1.17 shows that the rays A, D and M make precisely the Bragg angle θB with the reflecting planes. Ray D′, scattered by the first plane below the surface, is one wavelength out of phase with A′, ray M′ is n wavelengths out of phase with it. At the diffraction angle 2θB all these rays are in phase and unite to form a beam of maximum amplitude. Ray B makes a slightly larger angle θ1 with the reflecting plane, such that ray L' from the nth plane is (n + 1) wavelengths out of phase with B′. So the rays scattered by the upper half of the crystal cancel exactly with those scattered by the lower half of the crystal and θ1 is the smallest angle where complete destructive interference occurs. This is also the case for an angle θ2 which is a bit smaller than θB so that the path difference between the ray scattered by the first and the last plane is (n−1) wavelengths. These are the two limiting angles where the intensity of the diffracted beam drops to zero. This implies that the intensity is greater than zero all the way from θ2 to θ1 as depicted in Figure 1.18. The width of diffraction curves increases as the thickness of the crystal decreases because the angular range (2θ1 − 2θ2) increases as n decreases. As a measure of the peak width, the full width at half maximum (FWHM), denoted by , is used. As an approximation = 1 (2θ1 − 2θ2) = θ1 − θ2 is chosen, since this yields the 2 exact FWHM for a Gaussian. The path difference equations for these two angles related to the entire thickness of the crystal are given by: 2t sin θ1 = (n + 1) λ 2t sin θ2 = (n − 1) λ Subtracting the above equations yields: t(sin θ1 − sin θ2) = λ 2t cos 1 2 sin 1 2 = λ 2 2 30 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.17: Scattering from a finite number of equidistant planes Figure 1.18: FWHM for a crystal of finite (left) and infinite (right) size Since θ1 and θ2 are very close to θB it is reasonable to make the following approximations: sin θ1 + sin θ2 = 2θB sin 1 2 = 1 2 2 2 With these approximations we obtain 2t 1 2 cos θB = λ 2 and using the definition of the FWHM introduced above gives a crystal depth t = n.d of t cos B A more rigorous mathematical treatment of the problem results in the Debye-Scherrer Formula is D K Cos Here K is a dimensionless constant that may range from 0.89 to 1.39 depending on the specific geometry of the scattering objects. For a perfect two-dimensional lattice, where every point on the lattice emits a spherical wave, numerical calculations yield 31 Chapter 1 Semiconductor metal oxides as humidity sensors the lower bound of 0.89 for K [63]. A cubic three-dimensional crystal is best described by K = 0.94, while analytical calculations for a perfectly spherical object yield K = 1.33. X-ray Diffraction Unit is shown in Figure 1.19. Figure 1.19: X-ray Diffraction Unit 1.11.2 Scanning Probe Microscopy The scanning probe microscopy (SPM) is one of the powerful modern research techniques that allow investigating the morphology and the local properties of the solid body surface with high spatial resolution. During last 10 years the scanning probe microscopy has turned from an exotic technique accessible only to a limited number of research groups, to a widespread and successfully used research tool of surface properties. Currently, practically every research in the field of surface physics and thin-film technologies apply the SPM techniques. The scanning probe microscopy has formed also a basis for development of new methods in nanotechnology, i.e. the technology of creation of structures at nanometric scales. The scanning tunneling microscope (STM) is the first in the probe microscopes family; it was invented in 1981 by the Swiss scientists Gerd Binnig and Heinrich Rohrer [6465]. In their works they have shown, that this is a quite simple and rather effective way to study a surface with spatial resolution down to atomic one. Their technique was fully acknowledged after visualization of the atomic structure of the surface of some materials and, particularly, the reconstructed surface of silicon. In 1986, G. Binnig and H. Rohrer were awarded the Nobel Prize in physics for invention of the tunneling microscope. The scanning probe microscope gives researchers imaging tools for the future as these specialized microscopes provide high image magnification for observation of three-dimensional-shaped specimens. 32 Chapter 1 Semiconductor metal oxides as humidity sensors Scanning probe technology at the microscopic level is found in both academic and industrial laboratories today including physics, biology, chemistry and are now standard analysis tools for research and development. SPM provides very high resolution images of various sample properties. All of these microscopes work by measuring a local property such as height, optical absorption, or magnetism with a probe or tip placed very close to the sample. 1.11.2.1 Types (a) Scanning Tunneling Microscopy (b) Atomic Force Microscopy (c) Electric Force Microscopy (d) Magnetic Force Microscopy (e) Near-Field Optical Microscopy (f) Scanning Capacitance Microscopy 1.11.2.2 Basic Principle The analysis of a surface micro relief and of its local properties is performed by scanning probe microscopes using specially prepared tips in the form of needles. The size of the working part of such tips (the apex) is about ten nanometers. The usual tip-surface distance in probe microscopes is about 0.1-10 nanometers. Various types of interaction of the tip with the surface are exploited in different types of probe microscopes. For example the tunnel microscope is based on the phenomenon of a tunnelling current between a metal needle and a conducting sample; various types of interactive force underlie the working mechanism of atomic force, magnetic force and electric force microscopes. Activities for manipulation of atom and molecules at the nanoscale level are dominated by the use of scanning probe microscopes in ultra-high vacuum. Scanning Probe Microscopy (SPM) is a technique that is used to study the properties of surfaces at the atomic level. Unlike conventional microscopy, which uses light waves for imaging, SPM involves scanning the surface of a sample with a very fine probe (‘tip’) and monitoring the strength of some interaction between the tip and surface. Scanning Probe Microscopy (SPM) scans an atomically sharp probe over a surface, typically at a distance of a few angstroms or nanometres. The interaction between the sharp probe and surface provides 3D topographic image of surface at the atomic scale. Compared with other instruments that open a window to a world of molecule-sized spaces, SPMs are relatively simple, inexpensive, and easy to operate. 33 Chapter 1 Semiconductor metal oxides as humidity sensors Especially appealing about the proximal probes is their multipurpose nature that offers not only a view of individual atoms but also ways to pick them up, move them around, and position them at will. 1.11.3 Scanning Electron Microscopy Scanning electron microscopy (SEM) analyzes the surface structure of materials. It measures and evaluates surface pitting, failure analysis, characterization of dust, deposits, contaminants, particles, filter residues, and other applications. SEM is a powerful and frequently used instrument, in both academia and industry, to study, surface topography, composition, crystallography and properties on a local scale. The spatial resolution is better than that of the optical microscope. The SEM has an extremely large depth of focus and is therefore well suited for topographic imaging. Besides surface topographic studies the SEM can also be used for determining the chemical composition of a material, its fluorescent properties, the formation of magnetic domains and so on. It is a type of electron microscope that images a sample by scanning it with a high-energy beam of electrons in a raster scan pattern. The electrons interact with the atoms that make up the sample producing signals that contain information about the sample's surface topography, composition, and other properties such as electrical conductivity. Scanning electron microscopy analyses the surface of solid objects, producing higher resolution images than optical microscopy. SEM produces representations of three-dimensional samples from a diverse range of materials. Back-scatter and cathodoluminescence are used to evaluate a wide range of samples. 1.11.3.1 Working Principle The specimen is bombarded by a convergent electron beam, which is scanned across the surface. This electron beam generates a number of different types of signals, which are emitted from the area of the specimen where the electron beam is impinging, shown in Figure 1.20. The induced signals are detected and the intensity of one of the signals (at a time) is amplified and used to as the intensity of a pixel on the image on the computer screen. The electron beam then moves to next position on the sample and the detected intensity gives the intensity in the second pixel and so on. 34 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.20: Example of some of the different types of signals produced when high-energy electron impinge on a material. The working principle of the SEM is shown in Figure 1.21. For improved signal-tonoise ratio in the image, one can use a slower scan speed. This means that the electron beam stays a longer time at one position on the sample surface before moving to the next. This gives a higher detected signal and increased signal-to noise ratio. The types of signals produced by an SEM include secondary electrons, back-scattered electrons (BSE), characteristic X-rays, specimen current and transmitted electrons. Accelerated electrons in a SEM carry significant amounts of kinetic energy, and this energy is dissipated as a variety of signals produced by electron-sample interactions when the incident electrons are decelerated in the solid sample. These signals include secondary electrons (that produce SEM images), backscattered electrons (BSE), diffracted backscattered electrons, photons, visible light (cathodoluminescence) and heat. 35 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.21: Schematic diagram of a SEM Secondary electrons and backscattered electrons are commonly used for imaging samples: secondary electrons are most valuable for showing morphology and topography on samples and backscattered electrons are most valuable for illustrating contrasts in composition in multiphase samples. Secondary electron detectors are common in all SEMs, but it is rare that a single machine would have detectors for all possible signals. The signals result from interactions of the electron beam with atoms at or near the surface of the sample. In the most common or standard detection mode, secondary electron imaging or SEI, the SEM can produce very high-resolution images of a sample surface, revealing details less than 1 nm in size. Due to the very narrow electron beam, SEM micrographs have a large depth of field yielding a characteristic three-dimensional appearance useful for understanding the surface structure of a sample. In the present study, the surface morphology of the samples was investigated with a Cambridge LEO-0430 SEM (Figure 1.22). 36 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.22: Scanning Electron Microscopy Unit. 1.11.4 Transmission Electron Microscopy The transmission electron microscope (TEM) operates on the same basic principles as the light microscope but uses electrons instead of light. TEM uses high energy electrons to penetrate through a thin (≤100 nm) sample. This offers increased spatial resolution in imaging (down to individual atoms) as well as the possibility of carrying out diffraction from nano-sized volumes. At a maximum potential magnification of 1 nanometer, TEMs are the most powerful microscopes. TEMs produce high resolution, two-dimensional images, allowing for a wide range of educational, science and industry applications. TEM consist of the following components: a electron source, thermionic gun, electron beam, electromagnetic lenses, vacuum chamber, condenser, sample stage, phosphor or fluorescent screen and computer. A Transmission Electron Microscope produces a high-resolution, black and white image from the interaction that takes place between prepared samples and energetic electrons in the vacuum chamber. Air needs to be pumped out of the vacuum chamber, creating a space where electrons are able to move. The electrons then pass through multiple electromagnetic lenses. These solenoids are tubes with coil wrapped around them. The beam passes through the solenoids, down the column, makes contact with the screen where the electrons are converted to light and form an image. The image can be manipulated by adjusting the voltage of the gun to accelerate or decrease the speed of electrons as well as changing the electromagnetic wavelength via the solenoids. During transmission, the speed of electrons directly correlates to electron wavelength; the faster electrons move, the shorter wavelength and the greater the quality and detail of the image. The lighter areas of the image represent the places where a greater number of electrons were able to pass through the 37 Chapter 1 Semiconductor metal oxides as humidity sensors sample and the darker areas reflect the dense areas of the object. To obtain a TEM analysis, samples need to have certain properties. They need to be sliced thin enough for electrons to pass through, a property known as electron transparency. Samples need to be able to withstand the vacuum chamber and often require special preparation before viewing. Samples need to be able to withstand the vacuum chamber and often require special preparation before viewing. Today TEMs constitute arguably the most efficient and versatile tools for the characterization of materials over spatial ranges from the atomic scale, through the ever-growing ‘nano’ regime (from < 1 nm to ~ 100 nm) up to the micrometer level and beyond. In the TEM we are usually most interested in those electrons that do not deviate far from the incidentelectron direction. This is because the TEM is constructed to gather these electrons primarily and they also give us the information we seek about the internal structure and chemistry of the specimen. Other forms of scattering, such as electrons which are scattered through large angles (e.g., backscattered electrons) and electrons ejected from the specimen (such as secondary electrons). So the electrons that hit the specimen are often called the incident beam and those scattered by the specimen are called scattered (or sometimes specifically, diffracted) beams. Electrons coming through a thin specimen are separated into those that suffer no angular deviation and those scattered though measurable angles. We call the undeviated electrons the ‘direct beam’ (in contrast to most texts that describe this as the ‘transmitted beam’ despite the fact that all electrons coming through the specimen have been ‘transmitted’). As the electrons travel through the specimen they are either scattered by a variety of processes or they may remain unaffected. The end result, however, is that a nonuniform distribution of electrons emerges from the exit surface of the specimen, as shown schematically in Figure 1.23. Figure 1.24 shows transmission electron microscopy unit. 38 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.23: (a) A uniform intensity of electrons, represented by the horizontal lines, falls on a thin specimen. Scattering within the specimen changes both the spatial and angular distributions of the emerging electrons. The spatial distribution (intensity) is indicated by the wavy line. (b) The change in angular distribution is shown by an incident beam of electrons being transformed into several forwardscattered beams. Figure 1.24: Transmission Electron Microscopy Unit. 39 Chapter 1 Semiconductor metal oxides as humidity sensors 1.11.5 Differential Scanning Calorimetry Differential scanning calorimetry (DSC) is a thermo analytical technique in which the difference in the amount of heat required to increase the temperature of a sample and reference is measured as a function of temperature. Both the sample and reference are maintained at nearly the same temperature throughout the experiment. Generally, the temperature program for a DSC analysis is designed such that the sample holder temperature increases linearly as a function of time. The reference sample should have a well-defined heat capacity over the range of temperatures to be scanned. The technique was developed by E. S. Watson and M. J. O'Neill in 1962 and introduced commercially at the 1963 Pittsburgh Conference on Analytical Chemistry and Applied Spectroscopy. The first adiabatic differential scanning calorimeter that could be used in biochemistry was developed by P. L. Privalov and D. R. Monaselidze in 1964. The term DSC was coined to describe this instrument which measures energy directly and allows precise measurements of heat capacity. The basic principle underlying this technique is that when the sample undergoes a physical transformation such as phase transitions, more or less heat will need to flow to it than the reference to maintain both at the same temperature. Whether less or more heat must flow to the sample depends on whether the process is exothermic or endothermic. For example, as a solid sample melts to a liquid it will require more heat flowing to the sample to increase its temperature at the same rate as the reference. This is due to the absorption of heat by the sample as it undergoes the endothermic phase transition from solid to liquid. Likewise, as the sample undergoes exothermic processes (such as crystallization) less heat is required to raise the sample temperature. By observing the difference in heat flow between the sample and reference, differential scanning calorimeters are able to measure the amount of heat absorbed or released during such transitions. DSC may also be used to observe more subtle phase changes, such as glass transitions. It is widely used in industrial settings as a quality control instrument due to its applicability in evaluating sample purity and for studying polymer curing. The result of a DSC experiment is a curve of heat flux versus temperature or versus time. There are two different conventions: exothermic reactions in the sample shown with a positive or negative peak, depending on the kind of technology used in 40 Chapter 1 Semiconductor metal oxides as humidity sensors the experiment. This curve can be used to calculate enthalpies of transitions. This is done by integrating the peak corresponding to a given transition. It can be shown that the enthalpy of transition can be expressed using the following equation: ΔH = KA Where ΔH is the enthalpy of transition, K is the calorimetric constant, and A is the area under the curve. The calorimetric constant will vary from instrument to instrument, and can be determined by analyzing a well-characterized sample with known enthalpies of transition. Differential scanning calorimetry can be used to measure a number of characteristic properties of a sample. Using this technique it is possible to observe fusion and crystallization events as well as glass transition temperatures Tg. DSC can also be used to study oxidation, as well as other chemical reactions. Glass transitions may occur as the temperature of an amorphous solid is increased. These transitions appear as a step in the baseline of the recorded DSC signal. This is due to the sample undergoing a change in heat capacity; no formal phase change occurs. As the temperature increases, an amorphous solid will become less viscous. At some point the molecules may obtain enough freedom of motion to spontaneously arrange themselves into a crystalline form. This is known as the crystallization temperature (Tc). This transition from amorphous solid to crystalline solid is an exothermic process, and results in a peak in the DSC signal. As the temperature increases the sample eventually reaches its melting temperature (Tm). The melting process results in an endothermic peak in the DSC curve. The ability to determine transition temperatures and enthalpies makes DSC a valuable tool in producing phase diagrams for various chemical systems. 41 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.25: Differential scanning calorimeter. 1.11.6 Ultraviolet-visible spectroscopy Ultraviolet-visible spectroscopy refers to absorption spectroscopy in the UVvisible spectral region. This means it uses light in the visible and adjacent (near-UV and near-infrared (NIR) ranges. The absorption in the visible range directly affects the perceived color of the chemicals involved. In this region of the electromagnetic spectrum, molecules undergo electronic transitions [66]. This technique is complementary to fluorescence spectroscopy, in that fluorescence deals with transitions from the excited state to the ground state, while absorption measures transitions from the ground state to the excited state. The instrument used in ultraviolet-visible spectroscopy is called a UV/vis spectrophotometer. It measures the intensity of light passing through a sample (I), and compares it to the intensity of light before it passes through the sample (Io). The ratio I / Io is called the transmittance, and is usually expressed as a percentage (%T). The absorbance (A) is based on the transmittance: 𝐀 = − 𝐥𝐨𝐠 ( %𝐓 ) 𝟏𝟎𝟎 42 Chapter 1 Semiconductor metal oxides as humidity sensors Figure 1.26: Diagram of a single-beam UV/vis spectrophotometer. Figure 1.26 shows the diagram of a single-beam UV/vis spectrophotometer. The basic parts of a spectrophotometer are a light source, a holder for the sample, a diffraction grating or monochromatic to separate the different wavelengths of light, and a detector. The radiation source is often a Tungsten filament (300-2500 nm), a deuterium arc lamp, which is continuous over the ultraviolet region (190-400 nm) or more recently light emitting diodes (LED) and Xenon Arc Lamps for the visible wavelengths. The detector is typically a photodiode or a CCD. Photodiodes are used with monochromators, which filter the light so that only light of a single wavelength reaches the detector. Diffraction gratings are used with CCDs, which collects light of different wavelengths on different pixels. A spectrophotometer can be either single beam or double beam. In a single beam instrument (such as the Spectronic 20), all of the light passes through the sample cell. Io must be measured by removing the sample. This was the earliest design, but is still in common use in both teaching and industrial labs. In a double-beam instrument, the light is split into two beams before it reaches the sample. One beam is used as the reference; the other beam passes through the sample. Some double-beam instruments have two detectors (photodiodes), and the sample and reference beam are measured at the same time. In other instruments, the two beams pass through a beam chopper, which blocks one beam at a time. The detector alternates between measuring the sample beam and the reference beam. 43 Chapter 1 Semiconductor metal oxides as humidity sensors Samples for UV/Vis spectrophotometer are most often liquids, although the absorbance of gases and even of solids can also be measured. Samples are typically placed in a transparent cell, known as a cuvette. Cuvettes are typically rectangular in shape, commonly with an internal width of 1 cm. Test tubes can also be used as cuvettes in some instruments. The type of sample container used must allow radiation to pass over the spectral region of interest. The most widely applicable cuvettes are made of high quality fused silica or quartz glass because these are transparent throughout the UV, visible and near infrared regions. Glass and plastic cuvettes are also common, although glass and most plastics absorb in the UV, which limits their usefulness to visible wavelengths [67]. The variation in absorption coefficient as a function of photon energy for allowed direct transitions is given by: α =A (hν-Eg)1/2 In above equation α is the absorption coefficient, A is a constant, h is Planck’s constant, ν is the frequency and Eg is the band gap energy. The absorption coefficient, α, is obtained from Beer’s law I = Io exp (-αx) In the above equation, x is thickness of the measured sample. A plot of versus photon energy was used to obtain the value of the direct band gap by extrapolating the linear portion of the curves to zero absorption. 1.11.7 Fourier Transform Infrared (FTIR) Spectroscopy FTIR spectrometers are widely used in organic synthesis, polymer science, petrochemical engineering, pharmaceutical industry and food analysis. In addition, since FTIR spectrometers can be hyphenated to chromatography, the mechanism of chemical reactions and the detection of unstable substances can be investigated with such instruments. The range of Infrared region is 12800 ~ 10 cm-1 and can be divided into near-infrared region (12800 ~ 4000 cm-1), mid-infrared region (4000 ~ 200 cm-1) and far-infrared region (50 ~ 1000 cm-1). The discovery of infrared light can be dated back to the 19th century. Since then, scientists have established various ways to utilize infrared light. Infrared absorption spectroscopy is the method which scientists use to determine the structures of molecules with the molecules’ characteristic absorption of infrared radiation. Infrared spectrum is molecular vibrational spectrum. When exposed to infrared radiation, sample molecules selectively absorb radiation of 44 Chapter 1 Semiconductor metal oxides as humidity sensors specific wavelengths which causes the change of dipole moment of sample molecules. Consequently, the vibrational energy levels of sample molecules transfer from ground state to excited state. The frequency of the absorption peak is determined by the vibrational energy gap. The number of absorption peaks is related to the number of vibrational freedom of the molecule. The intensity of absorption peaks is related to the change of dipole moment and the possibility of the transition of energy levels. Therefore, by analyzing the infrared spectrum, one can readily obtain abundant structure information of a molecule. Most molecules are infrared active except for several homonuclear diatomic molecules such as O2, N2 and Cl2 due to the zero dipole change in the vibration and rotation of these molecules. What makes infrared absorption spectroscopy even more useful is the fact that it is capable to analyze all gas, liquid and solid samples. The common used region for infrared absorption spectroscopy is 4000 ~ 400 cm-1 because the absorption radiation of most organic compounds and inorganic ions is within this region. Infrared spectroscopy has been a workhorse technique for materials analysis in the laboratory for over seventy years. An infrared spectrum represents a fingerprint of a sample with absorption peaks which correspond to the frequencies of vibrations between the bonds of the atoms making up the material. Because each different material is a unique combination of atoms, no two compounds produce the exact same infrared spectrum. Therefore, infrared spectroscopy can result in a positive identification (qualitative analysis) of every different kind of material. In addition, the size of the peaks in the spectrum is a direct indication of the amount of material present. With modern software algorithms, infrared is an excellent tool for quantitative analysis. FTIR spectrometers are the third generation infrared spectrometer. FTIR spectrometers have several prominent advantages: (1) The signal-to-noise ratio of spectrum is significantly higher than the previous generation infrared spectrometers. (2) The accuracy of wave number is high. The error is within the range of ± 0.01 cm-1. (3) The scan time of all frequencies is short (approximately 1 s). (4) The resolution is extremely high (0.1 ~ 0.005 cm-1). (5) The scan range is wide (1000 ~ 10 cm-1). (6) The interference from stray light is reduced. Due to these advantages, FTIR Spectrometers have replaced dispersive IR spectrometers. A block diagram of a FTIR spectrometer is shown in Figure 1.27. A common FTIR spectrometer consists of a source, interferometer, sample compartment, detector, amplifier, A/D convertor, and a computer. The source generates radiation which passes the sample through the 45 Chapter 1 Semiconductor metal oxides as humidity sensors interferometer and reaches the detector. Then the signal is amplified and converted to digital signal by the amplifier and analog-to-digital converter, respectively. Eventually, the signal is transferred to a computer in which Fourier transform is carried out. Figure 1.27: is a block diagram of an FTIR spectrometer. A solution was developed which employed a very simple optical device called an interferometer. The interferometer produces a unique type of signal which has all of the infrared frequencies “encoded” into it. The signal can be measured very quickly, usually on the order of one second or so. Thus, the time element per sample is reduced to a matter of a few seconds rather than several minutes. Most interferometers employ a beam splitter which takes the incoming infrared beam and divides it into two optical beams. One beam reflects off of a flat mirror which is fixed in place. The other beam reflects off of a flat mirror which is on a mechanism which allows this mirror to move a very short distance (typically a few mm) away from the beam splitter. The two beams reflect off of their respective mirrors and are recombined when they meet back at the beam splitter. Because the path that one beam travels is a fixed length and the other is constantly changing as its mirror moves, the signal which exits the interferometer is the result of these two beams “interfering” with each other. The resulting signal is called an interferogram which has the unique property that every data point which makes up the signal has information about every infrared frequency which comes from the source. This means that as the interferogram is measured; all frequencies are being measured simultaneously. Thus, the use of the 46 Chapter 1 Semiconductor metal oxides as humidity sensors interferometer results in extremely fast measurements. Because the analyst requires a frequency spectrum in order to make identification, the measured interferogram signal cannot be interpreted directly. A means of “decoding” the individual frequencies is required. This can be accomplished via a well-known mathematical technique called the Fourier transformation. This transformation is performed by the computer which then presents the user with the desired spectral information for analysis. A Figure 1.28 shows the diagram of a Fourier-transform infrared spectrometer. Figure 1.28: Diagram of a Fourier-transform infrared spectrometer. 1.11.8 Atomic Force Microscopy Atomic force microscopy (AFM) or scanning force microscopy (SFM) is a very high-resolution type of scanning probe microscopy, with demonstrated resolution on the order of fractions of a nanometer, more than 1000 times better than the limit. Binnig, Quate and Gerber invented the first AFM in 1986 [90-91]. The first commercially available AFM was introduced in 1989. The information is gathered by "feeling" the surface with a mechanical probe. Piezoelectric elements that facilitate tiny but accurate and precise movements on electronic command enable the very precise scanning. Beam deflection system, using a laser and photodector to measure the beam position as shown in Figure 1.29. The AFM consists of a cantilever with a sharp tip (probe) at its end that is used to scan the specimen surface. The cantilever is typically silicon or silicon nitride with a tip radius of curvature on the order of nanometers. When the tip is brought into proximity of a sample surface, forces between the tip and the sample lead to a deflection of the cantilever according to 47 Chapter 1 Semiconductor metal oxides as humidity sensors Hooke's law. Depending on the situation, forces that are measured in AFM include mechanical contact force, Vandar Waals forces, capillary forces, chemical bonding, electrostatic forces, magnetic forces, casmir forces, salvation forces, etc. The parts of an approach-retraction cycle of the tip area shown in Figure 1.30. The deflection is measured using a laser spot reflected from the top surface of the cantilever into an array of photodiodes. Other methods that are used include optical interferometry, capacitive sensing or piezoresistive AFM cantilevers. These cantilevers are fabricated with piezoresistive elements that act as a strain gauge. Using a Wheatstone bridge, strain in the AFM cantilever due to deflection can be measured. If the tip was scanned at a constant height, a risk would exist that the tip collides with the surface, causing damage. Hence, in most cases a feedback mechanism is employed to adjust the tip-tosample distance to maintain a constant force between the tip and the sample. Traditionally, the sample is mounted on a piezoelectric tube that can move the sample in the z direction for maintaining a constant force, and the x and y directions for scanning the sample. Alternatively a 'tripod' configuration of three piezo crystals may be employed, with each responsible for scanning in the x, y and z directions. This eliminates some of the distortion effects seen with a tube scanner. In newer designs, the tip is mounted on a vertical piezo scanner while the sample is being scanned in X and Y using another piezo block. The resulting map of the area s = f(x, y) represents the topography of the sample. The AFM can be operated in number of modes, depending on the application; such as static or contact modes a variety of dynamic or non-contact mode. 1.11.8.1 AFM Modes of Operation (i) Contact Mode As the tip is raster-scanned across the surface, it is deflected as it moves over the surface corrugation. In constant force mode, the tip is constantly adjusted to maintain a constant deflection, and therefore constant height above the surface. This adjustment is displayed as data. However, the ability to track the surface in this manner is limited by the feedback circuit. Sometimes the tip is allowed to scan without this adjustment, and one measures only the deflection. This is useful for small, high-speed atomic resolution scans, and is known as variable-deflection mode. Because the tip is in hard contact with the surface, the stiffness of the lever needs to be lesser than the effective spring constant holding atoms together, which is on the 48 Chapter 1 Semiconductor metal oxides as humidity sensors order of 1-10 N/m. Most contact mode levers have a spring constant of <1N/m. The contact mode of AFM is shown in the Figure 1.31. Figure 1.29: Beam deflection system, using a laser and photodector to measure the beam position. Figure 1.30: The parts of an approach-retraction cycle of the tip. 49 Chapter 1 Semiconductor metal oxides as humidity sensors (ii) Non-contact Mode The non-contact mode of AFM is shown in Figure 1.31. In this mode, the tip of the cantilever does not contact the sample surface. The cantilever is instead oscillated at a frequency slightly above its resonance frequency where the amplitude of oscillation is typically a few nanometers (<10 nm). The Van Der Waals forces, which are strongest from 1 to 10 nm above the surface, or any other long range force which extends above the surface acts to decrease the resonance frequency of the cantilever. This decrease in resonance frequency combined with the feedback loop system maintains a constant oscillation amplitude or frequency by adjusting the average tip-to-sample distance. Measuring the tip-to-sample distance at each (x, y) data point allows the scanning software to construct a topographic image of the sample surface. Non-contact mode AFM does not suffer from tip or sample degradation effects that are sometimes observed after taking numerous scans with contact AFM. This makes non-contact AFM preferable to contact AFM for measuring soft sample. In the case of rigid samples, contact and non-contact images may look the same. However, if a few monolayers of adsorbed fluid are lying on the surface of a rigid sample, the images may look quite different. An AFM operating in contact mode will penetrate the liquid layer to image the underlying surface, whereas in noncontact mode an AFM will oscillate above the adsorbed fluid layer to image both the liquid and surface. Schemes for dynamic mode operation include frequency modulation and the more common amplitude modulation. In frequency modulation, changes in the oscillation frequency provide information about tip-sample interactions. Frequency can be measured with very high sensitivity and thus the frequency modulation mode allows for the use of very stiff cantilevers. Stiff cantilevers provide stability very close to the surface and, as a result, this technique was the first AFM technique to provide true atomic resolution in ultra-high vacuum conditions. (iii) Tapping Mode In this mode, the cantilever is driven to oscillate up and down at near its resonance frequency by a small piezoelectric element mounted in the AFM tip holder similar to non-contact mode. However, the amplitude of this oscillation is greater than 10 nm, typically 100 to 200 nm. Due to the interaction of forces acting on the cantilever when the tip comes close to the surface, Vander Waals force, dipole-dipole 50 Chapter 1 Semiconductor metal oxides as humidity sensors interaction, electrostatic forces etc. cause the amplitude of this oscillation to decrease as the tip gets closer to the sample. Figure 1.31 1.11.9 Porosimetry Porosimetry is an analytical tool used to determine various quantifiable aspects of a material's porous nature, such as pore diameter, total pore volume, surface area, and bulk and absolute densities. The technique involves the intrusion of a non-wetting liquid (usually mercury) at high pressure into a material through the use of a porosimeter. The pore size can be determined based on the external pressure needed to force the liquid into a pore against the opposing force of the liquid's surface tension. A force balance equation known as Washburn's equation for the above material having cylindrical pores is given as: 𝑷𝑳 − 𝑷𝑮 = 𝟒𝝈 𝒄𝒐𝒔𝜽 𝑫𝑷 Where PL = pressure of liquid, PG = pressure of gas, σ = surface tension of liquid, θ = contact angle of intrusion liquid, DP = pore diameter. Since the technique is usually done under vacuum, the gas pressure begins at zero. The contact angle of mercury with most solids is between 135º and 142º, so an 51 Chapter 1 Semiconductor metal oxides as humidity sensors average of 140º can be taken without much error. The surface tension of mercury at 20ºC under vacuum is 480 mN/m. With the various substitutions, the equation becomes: 𝑫𝑷 = 𝟏𝟒𝟕𝟎𝒌𝑷𝒂 . 𝝁𝒎 𝑷𝑳 As pressure increases, so does the cumulative pore volume. From the cumulative pore volume, one can find the pressure and pore diameter where 50% of the total volume has been added to give the median pore diameter. 1.12 Object of the present investigation There are a large number of materials and techniques used for humidity sensing measurements depending upon the purpose of measurement and the environment in which these measurements are made. The humidity sensors based on electrical methods are best suited for high sensitivity and compactness of the device. Also since the number of humidity sensitive materials is based on inorganic acetates, halides, nitrates, sulphates, carbonates, phosphates and oxides, the choice of a suitable material is difficult to make. We have been interested in carrying out our investigations with material that possess good sensitivity over the entire range of RH, i.e. from 10 to 90 %RH with properties which are stable over time and thermal cycling after exposure to the various chemical species likely to be present in the ambient. Out of above mentioned humidity sensitive compounds, metal oxides were considered to be the most promising materials for study because of their inherent chemical and physical stability. Earlier investigations have however, shown that tin oxide is one of the promising material among metal oxides for use in humidity and gas sensors. Tin dioxide (SnO2) is an n-type broad-band gap (3.6 eV) oxide semiconductor with high chemical and mechanical stabilities [68]. SnO2, which has outstanding optical, electrical and mechanical properties, is a versatile material and is also widely used as the most attractive materials for gas sensor applications [69], as a catalyst during the oxidation of organic compounds, as a key component in rechargeable Li batteries, and as a master element in opto-electronic devices. Porous microstructure of the materials with controlled pore size is preferred always. The sensitivity and response time of SnO2 based sensors strongly depend on the porosity of the material. 52 Chapter 1 Semiconductor metal oxides as humidity sensors In the present work, Tin Oxide nanomaterial and its nanocomposite have been synthesized by using different routes [70-76] and an extensive investigation has been carried out with its humidity sensing properties. Pellets and films of SnO2 have been annealed at different temperatures and exposed to humidity inside a constant humidity chamber. The variations in electrical resistance with variations in %RH have been recorded. 1.13 Organization of the Thesis Chapter 1 introduces the subject of study of the thesis and describes the objective of the present investigations. It deals with the synthesis and characterization methods of nanomaterials and their application as Humidity Sensors. The working principles of different type of Humidity Sensors have also been described. Chapter 2 deals with synthesis of SnO2 nanomaterials through mechanochemical route, its characterization and application as Humidity Sensor. Again in order to improve the sensitivity of sensor, CuO has been doped in SnO2 and its humidity sensing properties has been investigated thoroughly in Chapter 3. Chapter 4 deals with synthesis and characterization of antimony doped tin oxide via chemical precipitation method and their application as Humidity Sensor. Chapter 5 deals with synthesis and characterization of zinc doped tin oxide via chemical precipitation method and their application as Humidity Sensor. Conclusions and scope of further research work arrived at on the basis of the studies made in the thesis are described in Chapter 6. 53
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