Light Emitting Diodes for 2800-5000 nm spectral range
Light Emitting Diodes for 2800‐5000 nm spectral range are fabricated from narrow band‐gap InAsSb/InAsSbP‐based heterostructures lattice‐matched to InAs substrate. 



Maximum operating current at quasi‐CW mode is 250 mA;
Maximum operating current at pulse mode is 2 000 mA;
Switching time is 30‐50 ns;
Operating temperature range is ‐200...+50 °C.
Model
LMS34LED
LMS34LED high power
Lms38LED
Lms39LED
Lms41LED
Lms43LED
Lms46LED
Peak emission FWHM of the
wavelength, emission nm
band, nm
Power, µW
QCW Pulse *
mode mode **
Maximum operating current, mA
Operating Switching
temperature time, ns range, OC
QCW Pulse min max min max min max min max
mode mode
Standard LED models (LED chip with circular or ring top contact) ‐ LmsXXLED
3.30 3.49 400 600
25 45 320 480 0.2‐0.5 250
2000
10‐30
‐200...+50
Voltage, V
3.30
3.49
400
500
45
80
480 720
0.2‐0.5
250
2000
10‐30
‐200...+50
3.70
3.85
3.95
4.10
4.40
3.84
3.94
4.09
4.30
4.60
500
550
700
700
700
700
750
1000
1000
1100
20
15
15
8
2
40
30
30
12
4
180
180
180
180
100
0.5‐0.8
0.5‐0.8
0.5‐0.7
0.2‐0.8
1.5‐3.0
250
250
250
250
250
2000
2000
2000
2000
2000
10‐30
10‐30
10‐30
10‐30
10‐30
‐200...+50
‐200...+50
‐200...+50
‐200...+50
‐200...+50
220
220
220
220
140
* Repetition rate: 0.5 kHz, pulse duration: 1 ms, duty circle: 50%, current: 200 mA ** Repetition rate: 1 kHz, pulse duration: 1 µs, duty circle: 0.1%, current: 1 A
Prolinx Corporation Tel:81-3-5256-2052 Fax:81-3-5256-2272 [email protected]
SIA Kanda Squre 3F, 17 Kandakonya-cho, Chiyoda-ku, Tokyo JAPAN Zip101-0035