V RM
I T(AV)M
I T(RMS)
I TSM
V T0
rT
=
6500 V
=
1580 A
=
2480 A
= 29.7×103 A
=
1.2 V
=
0.458 m
Bi-Directional Control Thyristor
5STB 18U6500
Doc. No. 5SYA1037-03 Aug. 10

Two thyristors integrated into one wafer

Patented free-floating silicon technology

Designed for energy management and industrial applications

Optimum power handling capability

Interdigitated amplifying gate
The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)
Blocking
Maximum rated values 1)
Parameter
Max. surge peak forward
blocking voltage
Symbol Conditions
V SM
t p = 10 ms, f = 5 Hz
T vj = 5…110°C, Note 1
Max repetitive peak forward V RM
blocking voltage
Max crest working forward
voltages
V WM
Critical rate of rise of offstate voltage
dv/dt crit
5STB 18U6500
6500
f = 50 Hz, t p = 10 ms, t p1 = 250 s,
T vj = 5…110°C, Note 1
Exp. to 3750 V, T vj = 110°C
Unit
V
6500
V
3300
V
2000
V/s
Characteristic values
Parameter
Max reverse leakage
current
Symbol Conditions
I R(M)
V RM , T vj = 110 °C
min
typ
max
600
Unit
mA
typ
135
max
160
Unit
kN
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C
Note 2: Recommended minimum ratio of V DRM / V DWM or V RRM / V RWM = 2. See App. Note 5SYA 2051.
Mechanical data
Maximum rated values 1)
Parameter
Mounting force
Symbol Conditions
FM
min
120
Acceleration
a
Device unclamped
50
m/s2
Acceleration
a
Device clamped
100
m/s2
Characteristic values
Parameter
Weight
Symbol Conditions
m
Housing thickness
H
F M = 135 kN, T a = 25 °C
min
typ
34.8
max
3.6
35.5
Unit
kg
mm
Surface creepage distance D S
53
mm
Air strike distance
22
mm
Da
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STB 18U6500
On-state
Maximum rated values 1)
Parameter
Average on-state current
Symbol Conditions
I T(AV)M
Half sine wave, T c = 70 °C
RMS on-state current
I T(RMS)
RMS on-state current
I T(RMS)
Peak non-repetitive surge
current
I TSM
Limiting load integral
It
Peak non-repetitive surge
current
I TSM
Limiting load integral
It
min
typ
Full sine wave, T c = 70 °C
max
1580
Unit
A
2480
A
3510
t p = 10 ms, T vj = 110 °C, sine wave
after surge:V D = V R = 0 V
29.7×10
2
t p = 8.3 ms, T vj = 110 °C, sine wave
after surge: V D = V R = 0 V
2
A
3
A
2
4.40×106
As
31.8×103
A
4.19×106
As
2
Characteristic values
Parameter
On-state voltage
Symbol Conditions
VT
I T = 1600 A, T vj = 110 °C
Threshold voltage
V T0
Slope resistance
rT
Holding current
IH
Latching current
IL
min
typ
max
1.93
Unit
V
1.2
V
0.458
m
T vj = 25 °C
125
mA
T vj = 110 °C
75
mA
T vj = 25 °C
600
mA
T vj = 110 °C
500
mA
max
250
Unit
A/µs
1000
A/µs
I T = 1000 A - 3000 A, T vj = 110 °C
Switching
Maximum rated values 1)
Parameter
Critical rate of rise of onstate current
Symbol Conditions
di/dt crit T vj = 110 °C,
Critical rate of rise of onstate current
di/dt crit
Circuit commutated turn-off t q
time
Critical rate of rise of
commutating voltage
min
typ
Cont.
I TRM = 2000 A,
f = 50 Hz
V D  3750 V,
Cont.
I FG = 2 A, t r = 0.5 µs
f = 1Hz
T vj = 110 °C, I TRM = 2000 A,
V R = 200 V, di T /dt = -1.5 A/µs,
V D  0.67V RM , dv D /dt = 20 V/µs,
800
µs
dv/dt com T vj = 110 °C, V R  0.67V RM
500
V/µs
max
3500
Unit
µAs
Characteristic values
Parameter
Reverse recovery charge
Reverse recovery current
Symbol Conditions
T vj = 110 °C, I TRM = 2000 A,
Q rr
V R = 200 V, di T /dt = -1.5 A/µs
I
Gate turn-on delay time
t gd
RM
min
2100
typ
48
T vj = 25 °C, V D = 0.4V RM , I FG = 2 A,
t r = 0.5 µs
70
A
3
µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-03 Aug. 10
page 2 of 7
5STB 18U6500
Triggering
Maximum rated values 1)
Parameter
Peak forward gate voltage
Symbol Conditions
V FGM
Max. rated peak forward
gate current
Peak reverse gate voltage
max
12
Unit
V
I FGM
10
A
V RGM
10
V
3
W
Max. rated gate power loss P G
Max. rated peak forward
gate power
min
typ
For DC gate current
see Fig. 9
P GM(AV)
W
Characteristic values
Parameter
Gate trigger voltage
Symbol Conditions
V GT
T vj = 25 °C
min
typ
max
2.6
Gate trigger current
I GT
T vj = 25 °C
Gate non-trigger voltage
V GD
V D = 0.4 x V RM , T vj = 110 °C
0.3
V
Gate non-trigger current
I GD
V D = 0.4 x V RM
10
mA
400
Unit
V
mA
Thermal
Maximum rated values 1)
Parameter
Operating junction
temperature range
Symbol Conditions
T vj
min
max
110
Unit
°C
140
°C
max
8.5
Unit
K/kW
Single-side cooled
F m = 120...160 kN
17
K/kW
Double-side cooled
F m = 120...160 kN
1.6
K/kW
Single-side cooled
F m = 120...160 kN
3.2
K/kW
Storage temperature range T stg
typ
-40
Characteristic values
Parameter
Symbol Conditions
Thermal resistance junction R th(j-c)
Double-side cooled
to case
F m = 120...160 kN
(Valid for one thyristor half
no heat flow to the second
half.)
R th(j-c)
Thermal resistance case to R th(c-h)
heatsink
R th(c-h)
min
typ
Analytical function for transient thermal
impedance:
n
Z th(j- c) (t) =  R i (1- e- t/ i )
i 1
i
1
2
3
4
R i (K/kW)
5.748
1.731
0.688
0.333
 i (s)
0.9531
0.1240
0.0144
0.0031
Fig. 1 Transient thermal impedance (junction-tocase) vs. time
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-03 Aug. 10
page 3 of 7
5STB 18U6500
Max. on-state characteristic model:
Max. on-state characteristic model:
V T25  ATvj  BTvj  IT  CTvj  ln(IT 1)  DTvj  IT
V T110  ATvj  BTvj  IT  CTvj  ln(IT 1)  DTvj  IT
A 25
278.1×10-6
Valid for I T = 400 – 18000 A
B 25
C 25
D 25
87.42×10-6 172.0×10-3 13.54×10-3
Valid for I T = 400 – 18000 A
A 110
442.3×10-6
B 110
169.2×10-6
C 110
125.0×10-3
D 110
18.39×10-3
Fig. 2 On-state voltage characteristics
Fig. 3 On-state voltage characteristics
Fig. 4 On-state power dissipation vs. mean on-state
current. Switching losses excluded.
Fig. 5 Max. permissible case temperature vs. mean
on-state current. Switching losses ignored.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-03 Aug. 10
page 4 of 7
5STB 18U6500
Fig. 6 Surge on-state current vs. pulse length.
Half-sine wave.
IG (t)
100 %
90 %
IGM
IGM
IGon
diG/dt
tr
tp(IGM)
Fig. 7 Surge on-state current vs. number of pulses.
Half-sine wave, 10 ms, 50Hz.
2..5 A
 1.5 IGT
2 A/s
 1 s
 5...20 s
diG/dt
IGon
10 %
t
tr
tp (IGM)
tp (IGon)
Fig. 8 Recommended gate current waveform
Fig. 9 Max. peak gate power loss
Fig. 10 Reverse recovery charge vs. decay rate of
on-state current
Fig. 11 Peak reverse recovery current vs. decay
rate of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-03 Aug. 10
page 5 of 7
5STB 18U6500
Turn-on and Turn-off losses
Fig. 12 Turn-on energy, half sinusoidal waves
Fig. 13 Turn-on energy, rectangular waves
Fig. 14 Turn-off energy, half sinusoidal waves
Fig. 15 Turn-off energy, rectangular waves
Total power loss for repetitive waveforms:
IT(t)
IT(t), V(t)
PTOT  PT  Won  f  Woff  f
-diT/dt
where
t
Qrr
V(t)
-IRM
-V0
T
1
PT   IT  VT (IT ) dt
T 0
dv/dtcom -VRM
Fig. 16 Current and voltage waveforms at turn-off
Fig. 17 Relationships for power loss
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1037-03 Aug. 10
page 6 of 7
5STB 18U6500


Fig. 18 Device Outline Drawing
Related documents:
5SYA 2020
5SYA 2049
5SYA 2051
5SYA 2034
5SYA 2036
5SZK 9104
5SZK 9105
Design of RC-Snubber for Phase Control Applications
Voltage definitions for phase control thyristors and diodes
Voltage ratings of high power semiconductors
Gate-Drive Recommendations for PCT's
Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please
contact factory
Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on
request, please contact factory
Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
[email protected]
www.abb.com/semiconductors
Doc. No. 5SYA1037-03 Aug. 10