Processing of a structured scintillator
for high-resolution X-ray imaging
Yashar Hormozan, Sang Ho Yun, Prof. Jan Linross
Dept. Of Material Physics , Royal Institute of Technology (KTH), Stockholm, Sweden
X-ray
CsI(Tl)
Si
SiO2
Visible light
X-ray
absorption
CCD
Filling
temperature
Filling time
Light yield
Processing of a structured scintillator
for high-resolution X-ray imaging
Yashar Hormozan, Sang Ho Yun, Prof. Jan Linross
Dept. Of Material Physics , Royal Institute of Technology (KTH), Stockholm, Sweden
Filling temperature
Filling time and Doping
Size dependence
▲1.4 µm pitch
■ 4 µm pitch
+ 26 µm pitch
♦ 45 µm pitch
▲ Undoped
♦ Doped
625 ˚C
645 ˚C
690 ˚C
▲1.4 µm pitch
■ 4 µm pitch
+ 26 µm pitch
♦ 45 µm pitch
▲ Undoped
♦ Doped
TL loss during the filling
Less light yield efficiency
Evaporation of Thallium due to its high vapor pressure
 Tl segregation at the solidification front due to different solubilities of
thallium in the liquid and solid phases
 Thallium agglomeration in the CsI lattice
Higher aspect ratio of small pores
(The ratio of light yeild and absorbed X-ray in the pores)