Solid-State Electronics 49 (2005) 1905–1908
InGaN/GaN light emitting diodes with
Ni/Au mesh p-contacts
Shui-Hsiang Su , Cheng-Chieh Hou , Meiso Yokoyama , Shi-Ming Chen
班
學
姓
級：碩研電子二甲
號：M9730208
名：江宥辰
1. Introduction
2. Experimental
3. Results and discussion
4. Conclusion
5. References
Because of the high contact resistance to p-GaN
originated from low doping density of p-GaN, the
current was difficult to be injected into the LED.
For this reason, many solutions have been proposed to
reduce the contact resistance.
Experimental：結構圖
Results and discussion
Fig. 1. Normalized light transmission spectra of Ni/Au film and Ni/Au
mesh on glass substrates.
Fig. 2. Luminescence–current–voltage (L–I–V) characteristics of the
InGaN/GaN LEDs with Ni/Au film and Ni/Au mesh p-contacts,
respectively.
Fig. 3. The output power of the LEDs with Ni/Au film and
Ni/Au mesh p-contacts.
Fig. 4. The electroluminescence (EL) spectra of the
LEDs with Ni/Au film and Ni/Au mesh p-contacts. A
20 mA current is injected.
Fig. 5. Under a 20 mA injection current, the working images of LEDs with (a) Ni/Au
film and (b) Ni/Au mesh p-contacts.
Despite the higher forward voltage of the Ni/Au mesh p-contact, the
higher light transmittance of Ni/Au mesh p-contact leads to the better
output efficiency.
1. InGaN/GaN light emitting diodes with Ni/Au mesh p-contacts
2. SEMICONDUCTOR DEVICES Physics and Technology