PhD Position: Light-Matter Interaction in Semiconductor Nanowires
An increasing demand for fast communication technologies and the limitations inherent to electronic integrated circuits
has been stimulating the research of nanophotonic components. In particular semiconductor nanowires have gathered
widespread interest due to their simple fabrication, their high crystal quality and their remarkable photonic properties,
which allow them to act as efficient waveguides and as resonators either for photonic and plasmonic lasing or for the
harnessing of polaritonic effects.
Semiconductor nanowires are complex photonic structures supporting several longitudinal and sometimes also
transverse modes, which are coupled by the nonlinear material response, which in turn is determined by many-body
effects of the excited carriers [2].
In ongoing research we are developing a toolbox for the simulation of light-matter interaction in semiconductors under
varying excitation conditions [3] and at varying levels of simplicity.
In the framework of the DFG Forschergruppe 1616, the optics group at the Institute of Solid State Physics and Optics
headed by Prof. Ulf Peschel offers a PhD position (3 year 0.75 position) in this area of research.
Research topics will include both numerical simulations and theoretical analysis. The work will be performed in close
cooperation with experimental as well as other theoretical groups.
Possible topics include
 Semiclassical incorporation of phonon coupling to existing material models
 Investigation of exciton-polariton coupling in nanowires and nanostructures
 Investigation of electrically driven nanowire lasers
 Simulation of nanowires in bent, folded or coupled geometries
 Study of nanowire arrays and photonic crystal structures
 Quantum optics in nanowires
In case of interest please contact:
Robert Buschlinger, Helmholtzweg 4, Room 111, [email protected]
Electric field intensity in an optically pumped lasing semiconductor nanowire calculated using coupled FDTD and semiconductor
Bloch equations.
References:
1. R. Roeder, M. Wille, S. Geburt, J. Rensberg, M. Zhang, J. G. Lu, F. Capasso, R. Buschlinger, U. Peschel, and C. Ronning, Nano Lett. 13, 3602(2013)
2. C. P. Dietrich, R. Johne, T. Michalsky, C. Sturm, P. Eastham, H. Franke, M. Lange, M. Grundmann, and R. Schmidt-Grund, Phys. Rev. B 91, 041202
3. W.W. Chow and S.W. Koch. Semiconductor-Laser Fundamentals: Physics of the Gain Materials. Springer, 1999.
4. R. Buschlinger, M. Lorke, and U. Peschel, Phys. Rev. B, 91:045203, 2015