Data Sheet
Low Voltage Advance Barrier Rectifier
Main Product Characteristics
General Description
Low voltage advance barrier rectifier is suited for
switch mode power supplies and other power
converters. This device is intended for use in low
voltage operation, and particularly, in high frequency
circuits where low switching losses and low noise are
required.
The ABR1045 is available in PDFN-5×6-8 and
TO-277 packages.
IF(AV)
10A
VRRM
TJ(max)
45V
150C
VF (max) (TC=25C)
0.47V
Mechanical Characteristics
•
•
•
Features
•
•
•
•
•
ABR1045
•
Ultra Low Forward Voltage
High Surge Capacity
High Operating Junction Temperature
Pb-free Package is Available
Low Thermal Resistance
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V-0@ 0.125in.
Weight (Approximately):
0.09 Grams (PDFN-5×6-8 Package)
0.0965 Grams (TO-277 Package)
Finish: All External Surfaces Corrosion
Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C (Max) for 10 Seconds
Applications
•
•
•
PDFN-5×6-8
Power Supply Output Rectification
Mobile Charger
Adapter
TO-277
Figure 1. Package Types of ABR1045
May 2013
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
1
Data Sheet
Low Voltage Advance Barrier Rectifier
ABR1045
Pin Configuration
DNP Package
(PDFN-5×6-8)
VB Package
(TO-277)
Figure 2. Pin Configuration of ABR1045 (Top View)
Ordering Information
ABR1045
Package
PDFN-5×6-8
TO-277
-
Circuit Type
G1: Green
Package
DNP: PDFN-5×6-8
VB: TO-277
TR: Tape & Reel
Part Number
Marking ID
Packing Type
ABR1045DNPTR-G1
A1045DNP-G1
Tape & Reel
ABR1045VBTR-G1
A1045VB-G1
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
May 2013
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
2
Data Sheet
Low Voltage Advance Barrier Rectifier
ABR1045
Absolute Maximum Ratings (Per Diode Leg) (Note 1)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC=TBD
Non Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions, Half Wave, Single
Phase, 60Hz)
Operating Junction Temperature Range (Note 2)
VRRM
VRWM
VR
45
V
IF(AV)
10
A
IFSM
200
A
TJ
-65 to 150
C
Storage Temperature Range
TSTG
-65 to 150
C
Voltage Rate of Change (Rated VR)
dv/dt
10000
V/s
ESD (Machine Model=3C)
> 400
V
ESD (Human Body Model=3B)
> 8000
V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Note 2: The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ <
1/JA.
Recommended Operating Conditions
Parameter
Symbol
Condition
JA
Junction to Ambient
Maximum Thermal Resistance
Value
Unit
PDFN-5×6-8
70
C/W
Value
Units
TO-277
Electrical Characteristics
Parameter
Symbol
Maximum Instantaneous Forward
Voltage Drop (Note 3)
VF
Maximum Instantaneous Reverse
Current (Note 3)
IR
Conditions
IF=10A, TC=25C
0.47
IF=10A, TC=125C
0.41
Rated DC Voltage, TC=25C
0.3
Rated DC Voltage, TC=100C
15
V
mA
Note 3: Pulse Test: Pulse Width=300s, Duty Cycle ≤ 2.0%.
May 2013
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
3
Data Sheet
Low Voltage Advance Barrier Rectifier
ABR1045
Typical Performance Characteristics
IF,Instantaneous Forward Current (A)
100
10
1
o
25 C
o
100 C
o
125 C
o
150 C
0.1
0.01
0
100
200
300
400
500
600
VF,Instantaneous Forward Voltage (mV)
Figure 3. Typical Forward Characteristics
100
IR,Reverse Current (mA)
10
o
1
25 C
o
100 C
o
125 C
o
150 C
0.1
0.01
0
5
10
15
20
25
30
35
40
45
50
VR,Reverse Voltage (V)
Figure 4. Typical Reverse Characteristics
May 2013
Rev. 1. 1
BCD Semiconductor Manufacturing Limited
4
Data Sheet
Low Voltage Advance Barrier Rectifier
ABR1045
Mechanical Dimensions
PDFN-5×6-8
4.800(0.189)
5.000(0.197)
1.000(0.039)
1.200(0.047)
Unit: mm(inch)
0.900(0.035)
1.000(0.039)
0.510(0.020)
0.710(0.028)
3.820(0.150)
4.020(0.158)
1.20±0.10
+0
E2
DEPTH 0.05 -0.05
5.700(0.224)
5.800(0.228)
5.900(0.232)
6.100(0.240)
0.100(0.004)
MAX
5.100(0.201)
MAX
0.060(0.002)
0.200(0.008)
1.100(0.043)
MIN
0.510(0.020)
0.710(0.028)
0.350(0.014)
0.450(0.018)
0.210(0.008)
0.340(0.013)
1.170(0.046)
1.370(0.054)
8
12
E2
Symbol
min(mm) max(mm) min(inch) max(inch)
May 2013
Rev. 1. 1
Option 1 3.340
3.540
0.131
0.139
Option 2 3.180
3.380
0.125
0.133
BCD Semiconductor Manufacturing Limited
5
Data Sheet
Low Voltage Advance Barrier Rectifier
ABR1045
Mechanical Dimensions (Continued)
TO-277
May 2013
Rev. 1. 1
Unit: mm(inch)
BCD Semiconductor Manufacturing Limited
6
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