Me-C:H by CAAD
Me-C:H layer
Transition layer
Metal nitride/carbide
Substrate
 PVD/CAAD single synthesis
 Adhesion
 high ionization
 Low cost investment
 Industrialized production
 Plasma diagnostics
 Catalysis effect of metal doping
 Nitrogen doping effect
Schematic of deposition process
Emission of
metal species
Transport from
source to
substrate
SUBSTRATE
Me++ e- + CxHy → Me, CmHn, Ci, H ..
FILM
e-, particles
Dissociation
of reactive species
EVAPORATOR
SOURCE
Me+,
Film growth
on substrate
Chemical analysis of Cr-C:H
-- RBS and ERD
Energy (MeV)
0.5
1.0
1.5
2.0
1000
RBS
RBS simulated
Cr-C:H layer composition:
C=63%; Cr=4%; H=33%
Normalized yield
800
C2H
H
Cr
600
400
200
C
Cr
Substrate
0
500
1000
Channel
1500
2000
P(C2H2)=1.5Pa
(H/C)at% ~ 1:2
Cross Sectional TEM of Cr-C:H/N
(N/C atomic ratio of 3.5%)
Cr-C:H/N layer
transition layer
CrN layer
Cr-C:H/N layer (d)