MIGRATING FROM SDRAM TO DDR Bill Gervasi Vice Chairman, JEDEC Memory Timing Technology Analyst [email protected] Topics to Cover About JEDEC & DDR Market Segments & Fragments Design Architectures DDR Solutions Changes from SDR to DDR Timing Diagrams Impact to board design Why Not Rambus? 2 About JEDEC & DDR Setting open standards for >25 years Consortium of 350 companies Memory suppliers Users from all market segments Double Data Rate (DDR) SDRAM Latest approved JEDEC standard Results of collaborative market analysis 3 Segments & Fragments Servers PC100 PC133 DDR Workstations PC100 PC133 DDR PC Segment 2 PC Segment 1 PC Segment 0 Mobile Graphics Rambus DDR PC100 PC100 PC100 PC66 SS167 Rambus DDR PC133 DDR PC133 PC100 PC133 DDR SDRAM (x16) DDR DDR SDRAM(x32) 2H99 1H00 2H00 1H01 2H01 4 Market Factors Server per-system memory capacity increasing faster than PC Segments 1, 2 split Intel & non-Intel UMA graphics takes over Segs 0 & 1 “Sealed Box” PC for home market Mobile market mostly skips PC-133 DDR power lower than SDR Graphics early: short design cycles 5 RAM Evolution 3200MB/s Mainstream Memories 2100MB/s 1000MB/s 400MB/s 320MB/s Simple, incremental steps 6 Continued Tradition DDR is the logical incremental step Performance enhancements Detailed documentation Full support from vendors & users 7 System Designs PC/Server Small Memory Systems Controller* Controller * Single chip or separate clock, data & address chips Point to point 200MHz clock 3.2GB/s transfer Sockets & Stubs 133MHz clock 2.1GB/s transfer 8 DDR Solutions PC/Server Applications Small Systems 9 How Different is DDR? Simple upgrade to SDR designs Similar PCB characteristics Same fast RAS/CAS command set A few evolutionary improvements Bidirectional data strobe Low voltage swing I/O JEDEC Standards Data sheet including IBIS curves Module gerbers, application notes 10 From SDR to DDR Signaling Clocks Pin Count Data Strobe Packages 11 From SDR to DDR Signaling Clocks Pin Count Data Strobe Packages 12 DDR Signaling SSTL_2 low voltage swing inputs 2.5V I/O with 1.25V reference voltage Low voltage swing with termination Rail to rail if unterminated 13 From SDR to DDR Clocks Signaling Pin Count Data Strobe Packages 14 DDR Clocks Differential clocks on adjacent traces Timing is relative to crosspoint Helps insure 50% duty cycle 15 “Slow” Signal Timing on CK Loading mismatch, single data rate Addresses & Control signals Based 16 From SDR to DDR Signaling Clocks Pin Count Data Strobe Packages 17 “Fast” DDR Read Timing Data valid on rising & falling edges Source Synchronous: Data Strobe “DQS” travels with data 18 Read Timing 200MHz CK tDV insures worst case shift on DQS can’t happen (sufficient timing margin for system design!) 19 A Totally Sync Design Operate solely in memory clock timing domain Fast design for small systems Tight layout required 20 “Fast” DDR Write Timing DQS centered in data valid eye DM timing & loading identical to DQ Flexible to support large systems 21 DDR Write Design Hint Early DQS stresses back to back ops Late stresses the array update 1.0 * tCK is best “Perfect” alignment at 1.0 * tCK Good solution for single chip controllers 22 Emphasis on “Matched” DM/DQS loading identical to DQ Route as independent 8bit buses CONTROLLER DDR SDRAM DQ/DQS VREF VREF DM VREF VREF Disable 23 64 = 8 x 8 64bit bus is 8 sync’ed 8bit buses Allows external “copper” flexibility 8 buses resync upon entry to FIFO x16 DDR SDRAM Copper from controller to SDRAMs Inside Controller Sync to Controller clock 8 DQ 1 DM 1 DQS x16 DDR SDRAM x16 DDR SDRAM 8 DQ 1 DM 1 DQS x16 DDR SDRAM 8 DQ 1 DM 1 DQS 8bit Buffer 8bit Buffer 64bit Memory Controller Internal FIFO 24 From SDR to DDR Signaling Clocks Pin Count Data Strobe Packages 25 Packages Device 66pin TSOP same size as 54pin TSOP Same 400x875mil, .65mm vs .80mm DIMM 184pin same size as 168pin Same 5.25”, same pin pitch (key filled) SO-DIMM 200pin slightly longer than 144pin 73mm vs. 68mm, .65mm vs. .80mm 26 From SDR to DDR Signaling Clocks Pin Count Data Strobe Packages 27 Pin Count Versus SDR One DQS for 8 DQ (x8, x16 SD) --- or -- One DQS for every 32 DQ (x32 SG) One /CK adjacent to every CK One VREF Additional VDDQ, VSS? DQ/DM/DQS:VDDQ:VSS ratio of 4:1:1 Total: 5-12 more pins 28 Combined SDR/DDR SDR DDR 3.3V I/O supply Single ended CLK Echo CLK for reads No write latency CAS latency 2, 3 Series termination Burst length 1, 2, 4, 8 No reference voltage Combined 2.5V I/O supply Differential CK and CK DQS for reads Write latency one clock CAS latency 2, 2.5, (3) Series & parallel term’n Burst length 2, 4, 8 Reference voltage VREF SDR & DDR controller is a reasonable way to minimize risks 29 Hints for the Future You’ll get the fastest designs if you: Don’t use command interrupts Don’t use autoprecharge Fixed burst length 4 Programmable drive impedance Weak and strong drivers are standard Unbroken ground planes & islands 30 Why Not Rambus? 31 Compare DDR & Rambus 32 DDR Versus Rambus DIMM cost: PCB cost: Latency: Peak BW: Power: DDR Advantage Reason $10 Die, Heat sinks, + royalties dummy modules 15% 28 ±10% vs. 55 ±15% 27% Packet protocol 33% Frequency * width 40% Frequency Email me to get the white paper detailing this analysis 33 Rambus Market Issues High Poor fit for UMA graphics High latency power Poor fit for mobile Costly materials Poor fit for cost sensitive systems Leaves the $2500+ PC market as a fit Insufficient volumes to create a market Other solutions needed anyway 34 Summary DDR is here today Double the bandwidth Evolutionary design change over SDR Cheaper, faster, & cooler than Rambus Applies to all market segments Industry Standards Detailed complete data sheet & models Module designs on the web Visit http://www.jedec.org 35 Call to Action Watch all the market trends Let your memory vendor know about your commitment to DDR Let the trade press know your choice Use smart engineering to push limits Join JEDEC and influence the future 36 Thank You 37
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