DOI 10.4010/2016.742
ISSN 2321 3361 © 2016 IJESC
Research Article
Volume 6 Issue No. 3
Virtual Fabrication of Novel IDE Based Bimorph Piezoelectric
Energy Harvester
R.Nandhini
Assistant Professor
Department of ECE
C K College of Engineering and Technology, Cuddalore, India
[email protected]
Abstract:
This paper describes the virtual fabrication process flow of the IDE based bimorph piezoelectric cantilever structure. The
piezoMUMPS design rule is used for this fabrication. Virtual fabrication is done in Intellisuite software. The dimension of the
novel structure is 7x0.025x0.0025 mm.
Keywords: Virtual Fabrication, PiezoMUMPS, Blueprint, FabSim, Etching, Deposition, Trench.
I.INTRODUCTION
The bimorph cantilever structure can be described
as a sandwich-type cantilever in which two layers of a
piezoelectric material are laminated onto one surface of a
supporting beam or plate. The two piezoelectric layers are
generally poled in the same direction, typically in the
direction normal to the supporting beam/plate. When
opposing electric fields are applied to the two piezoelectric
layers, their corresponding dimensional changes are of the
opposite character, which gives rise to bending of the beam.
Thus due to this phenomenon the bimorph structure
generates potential more than the unimorph structure.
The zeroth layer is base silicon, the first layer is PZT strips
and the second layer is the aluminum strips then the third
layer is again PZT strips. Fourth layer is two platinum
strips placed over the first and last PZT strips and the
platinum electrode and finally fifth layer is for trench. The
blueprint of the novel structure is shown in figure 1.
Figure 1: Blueprint of Structure
The virtual fabrication is done using Intellisuite
software. With the help of Intellisuite the MEMS device
can be prototyped. The novel structure designed is virtually
fabricated using PiezoMUMPS design rule. PiezoMUMPs
is designed for general purpose micromachining of
piezoelectric devices in a Silicon-on-Insulator. The
PiezoMUMPs process is a simple 5-level mask SOI
patterning and etching process derived from work
performed at MEMSCAP. The blueprint is made ready for
the novel structure in 3D builder using their co-ordinate
points. Then the blueprint is loaded in Intellifab or Fabsim
and corresponding materials and process are selected.
In this paper sec 2 describes the virtual fabrication
of novel structure ,sec 3 describes the conclusion of this
work and sec 4 list the references.
The fab file is generated by uploading the blueprint to
the designing process. The first step in the fabrication
process is the definition of Si ie substrate Si using process
SOI (generic) with the thickness of 2.5μm.
II. VIRTUAL FABRICATION
The outline of the structure is first drawn in
blueprint. The dimension of the novel structure is
7x0.025x0.0025 mm. The blueprint contains six layers.
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The second step is the deposition of 100nm thick SiO2
bulk using non-conformal deposition method and this layer
is used to provide isolation between base Si layer and the
PZT strips.
The third step is deposition of 200nm PSG using nonconformal deposition method. This layer is called sacrificial
layer which helps in etching.
The fourth step is the deposition of PR-AZ5214 using
non-conformal method.
The fifth step is the exposure to UV where layer 1
mask level is chosen for exposure.
The sixth step involves the sacrificial etching of
PSG layer to form a SiO2 strips
The ninth step includes the non-conformal
deposition of 2500nm thick PZT using sol-gel process.
The tenth step is the deposition of 300nm thick
PR-AZ5214 using non-conformal method.
The eleventh step is the exposure to UV where layer 1
mask level is chosen for exposure.
The twelveth step involves the partial etching of
PZT using wet process.
The thirteenth step involves the partial etching of PRAZ5214 using wet process now the PZT strips are obtained.
The seventh steps contains the partial etching of
SiO2 using RIE process.
The fourteenth step is the
deposition of 5000nm thick aluminum.
non-conformal
The eighth step involves the partial etching of PRAZ5214 using wet process now the SiO2 strips are obtained.
The fifteenth step is the deposition of 300nm thick
PR-AZ5214 using non-conformal method.
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The sixteenth step shows the exposure to UV
where layer 2 mask level is chosen for exposure.
The seventeenth step involves partial etching of
aluminum using wet process.
The twenty third step involves partial etching of
PR-AZ5214 using wet process now the aluminum strips are
obtained.
The twenty fourth step is deposition of 200nm
PSG using planarization deposition method. This layer is
called sacrificial layer which helps in etching.
The eighteenth step involves partial etching of PRAZ5214 using wet process now the aluminum strips are
obtained.
The twenty fifth step is the non-conformal
deposition of 100nm thick aluminum.
The nineteenth step includes the non-conformal
deposition of 2500nm thick PZT using sol-gel process.
The twenty sixth step is the deposition of 300nm thick
PR-AZ5214 using non-conformal method.
The twentieth step is the deposition of 300nm
thick PR-AZ5214 using non-conformal method.
The twenty seventh step is the exposure to UV where
layer 4 mask level is chosen for exposure.
The twenty first step is the exposure to UV where
layer 3 mask level is chosen for exposure.
The twenty eighth step involves partial etching of
aluminum using RIE process.
The twenty second step involves the partial etching of
PZT using wet process.
The twenty ninth step involves the sacrificial
etching of PSG layer to form a aluminum electrode.
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The thirtyeth step involves sacrificial etching of PRAZ5214 using wet process and now the electrodes are
obtained.
The thirty first step is the deposition of 300nm
thick PR-AZ5214 using conformal method.
The thirty second step is the exposure to UV
where layer 5 mask level is chosen for exposure to form
trench at the bottom.
The thirty third step involves etch through of
silicon using RIE process.
The thirty fourth step involves partial etching of
PR-AZ5214 using wet process and now the trench is
formed at the bottom.
The thirty fifth step is the deposition of 300nm
thick PR-AZ5214 using conformal method.
The thirty sixth step is the exposure to UV where
layer 5 mask level is chosen for exposure to form trench at
the bottom.
The thirty seventh step involves the partial etching
of SiO2 using wet(BOE) process.
The thirty eighth step involves partial etching of
PR-AZ5214 using wet process and now the trench is
formed at the bottom.
III. CONCLUSION
Thus the virtual fabrication of the novel IDE based
bimorph piezoelectric cantilever is done using piezomumps
design rules and consideration. The intellisuite software is
used for the effective prototyping of MEMS device and to
evaluate their performance and specifications.
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