Simulation of Power Gain and Dissipation in Field-Coupled Nanomagnets G. Csaba, A. Csurgay, P. Lugli and W. Porod University of Notre Dame Center for Nano Science and Technology Technische Universität München Lehrstühl für Nanoelektronik Outline The Magnetic Quantum Cellular Automata Concept Power Dissipation in Nanoscale Magnets Hin/out VM x Lx VM y Ly VM z Lz Lin Vin Power Gain in Nanoscale Magnets The Quantum Cellular Automata ‘1’ ‘0’ ‘0’ ‘1’ Main idea: Interconnection by stray fields Wire Coulomb-repulsion ‘0’ ‘1’ Signal in Signal out Majority gate Driver Cell Input 1 Driven Cell By changing the geometry one can perform logic functions as well Output Input 2 Input 3 Magnetic Nanopillars ‘1’ ‘0’ Due to shape anisotropy there is a typically few hundred roomtemperature kT energy barrier between the two stationary states. Energy Bistable switch: 0 90 270 Interaction Between Two Nanoscale Magnets Magnetostatic energy M 20nm kT 100nm 50nm 300 15nm 150 0 90 270 The Nanomagnet Wire H ext 0.5μm Signal flow t Clocking results in predictable switching dynamics Micromagnetic Simulation of the Nanomagnet Wire 0.5μm H pump Input dot: retains its magnetization The Magnetic Majority Gate Top view: Input 1 Input 3 Input 2 Output ‘Central dot’ Input 1 Input 2 Input 3 Output 1 0 0 0 1 0 1 1 1 1 0 1 1 1 1 1 0 0 0 0 0 0 1 0 0 1 0 0 0 1 1 1 Input 2 OR Input 3 Input 2 AND Input 3 Investigations of permalloy nanomagnets (thermally evaporated and patterned by electron beam lithography) confirm the simulation results MFM Fabrication and pictures by A. Imre Simulated field AFM Simulation Experimental Progress Approaches to Magnetic Logic Devices Soliton – propagation in coupled dots Manipulation of domain wall propagation (Cowburn, Science, 2000) (Cowburn, Science, 2002) Joint ferro- and antiferromagnetic coupling Coupling between magnetic vortices, domain walls (Our group) (Parish and Forshaw, 2003) Pictures and fabrication by A. Imre Larger-Scale Systems Input currents Dot Array Output sensors Small building blocks ? Complex systems Magnetic Signal Propagation Fundamental questions from the system perspective: •What is the amount of dissipated power? •Do nanomagnets show power gain? Model of Dissipation in Magnets M M H eff Magnetic moments (spins) of the ferromagnetic material perform a damped precession motion around the effective field. The Landau-Lifschitz Equation (fundamental equation of domain theory) gives quantitative description of this motion: H eff M(r, t ) M(r, t ) H eff (r, t ) t M Heff M M(r, t ) M(r, t ) H eff (r, t ) Ms Dissipative term Power density: Pdiss (r, t ) H eff M t M(i) (r, t ) M(i) (r, t ) H(i) H eff eff (r, t ) Ms diss Switching of a Large Magnet Magnetization dynamics: M (r, t ) Hysteresis curve: Mx 7μm Hx Dissipated power: P(r, t ) Dissipated power density M x (H x ) Pdiss (t ) Ediss 1.5 105 kT 107 W H 0 10 ns Dissipation in a Domain-wall P 10 Conductor 7 Dissipated power density diss Simulation of a 50 nm by 20 nm permalloy strip W Minimizing the Dissipation Rapidly moving domain walls are the main source of dissipation in magnetic materials Make the magnets sufficiently small (submicron size magnets has no internal domain walls) Dissipation is strongest around domain walls Switch them slowly (use adiabatic pumping) Small magnets have no internal domain walls Non – Adiabatic Switching of Small Magnets Hz 0 System state H z small Energy landscape of a pillar-shaped single–domain nanomagnet 90 90 Energy wasted during switching H z at switching Energy barrier at zero field E Hz Micromagnetic Simulation of the Non-Adiabatic Switching Process M S Hy 20 nm M y (t ) 120 nm 60 nm M S 0 107 W 10 ns Total dissipation: Pdiss (t ) Ediss 4000 kT Micromagnetic simulation M (r, t ) 0 10 ns Adiabatic Switching E Energy barrier at zero field Hy 0 1. 1. Ηy H y small 2. Hz 3. H y large Hy 90 3. 2. 90 4. By adiabatic clocking, the system can be switched with almost no dissipation, but at the expense of slower operation. 4. Simulation of Adiabatic Switching 20 nm M S 120 nm M z (t ) 60 nm M S 0 100 ns 10 11 W Total dissipation: Ediss 30 kT Pdiss (t ) Dynamic simulation M (r, t ) 0 100 ns Switching Speed vs. Dissipated Power 104 20 nm Ediss [kT ] Full micromagnetic model 103 120 nm 60 nm 102 101 ~ 20kT Single-domain approx. 100 1010 101 109 108 107 106 trise [s] ~ 0.15 kT Adiabatically switched nanomagnets can dissipate at least two orders of magnitude less energy than the height of the potential barrier separating their steady-states The Lowest Limit of Dissipation in Magnetic QCA Deviations from the ideal single-domain behavior abrupt domain wall switches will always cause dissipation (few kT) Coupling between dots should be stronger than few kT dot switching cannot be arbitrarily slow few kT dissipation unavoidable The minimal dissipation of nanomagnetic logic devices is around a few kT per switching. Power Gain of Adiabatically Pumped Nanomagnets Schematic: 1.0 Mz / Ms Single-domain model External field Micromagnetic simulation: Magnetization 0.5 How energy flows, when magnets flip to their ground state? 0.0 -0.5 -1.0 0 50 100 150 200 250 300 350 Time (ns) 400 450 500 Detailed View of the Switching Process Pz(3)in kT P ns Ppump Pz(2)in 0.01 Pz(1)in 0.005 0.0 1.0 0.5 1.0 t ns 1.0 t ns M z(2) M Z / MS Pin Pout Energy of the magnetic signal increases as the soliton propagates along the wire M z(3) 0.0 M z(1) 1.0 0.0 0.5 Hysteresis Curves of SingleDomain Nanomagnets 1.0 M out z iyext 0.3M s Ms iyext 0.25M s 0.5 100 nm iyext 0.2M s 50 nm 50 nm 0.1 0.05 0 0.05 0.1 H zext M s 0.5 1.0 A Nanomagnet Driven by Current Loops High inductance ipump idc ipump small Inductance control ipump large iin iin iac Low inductance iin iac ipump idc This is a circuit with a variable inductance. Does it have applications? Magnetic Amplifiers Low impedance circuit High impedance circuit 1.Ettinger, G. M.: “Magnetic Amplifiers”, Wiley, New York, 1957 Nonlinearity of the hysteresis curve Tunable inductances Power gain Magnetic Computers iin iout iout idc 10 A vout vin idc 0 ipump vpump A magnetic shift register from Gschwind: Design of Digital Computers, 1967 Multi Apertured Device (MAD) This three-coil device behaves like a common-base transistor amplifier vout Coupled Nanomagnets as Circuits i pump Left neighbor (Equivalent circuit) Right neighbor (Equivalent circuit) Hy i in H zin H out z i out The origin of power gain in field-coupled nanomagnets can be understood on the same basis as the operation of magnetic parametric amplifiers Nanoelectronic circuit design Conclusions 1.0μm Magnetic field-coupling is an idea worth pursuing… Low dissipation, robust operation, high integration density and reasonably high speed 1cm As they are active devices, there is no intrinsic limit to their scalability Field-coupling is functionally equivalent to electrically interconected device architectures Our Group Prof. Vitali Metlushko Prof. Wolfgang Porod Prof. Paolo Lugli Prof. Arpad Csurgay (Circuit modeling) Prof. Gary H. Bernstein (Experiments) (Fabrication) Prof. Alexei Orlov (Electrical measurements) Alexandra Imre (Fabrication, Characterization) Ling Zhou (Electrical measurements) Our work was supported by the Office of Naval Research, the National Science Foundation and the W. M. Keck Foundation
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