VS-150MT060WDF-P
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Vishay Semiconductors
MTP PressFit IGBT Power Module
Primary Dual Forward
FEATURES
• Buck PFC stage with warp 3 IGBT and FRED Pt®
hyperfast diode
• Integrated thermistor
• Isolated baseplate
• Very low stray inductance design for high speed operation
• Ultrafast switching IGBT
• PressFit pins locking technology. Patent # US.263.820 B2
• Designed and qualified for industrial level
MTP PressFit
(package example)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
PRODUCT SUMMARY
• Lower conduction losses and switching losses
IGBT, TJ = 150 °C
VCES
600 V
• Optimized for welding, UPS, and SMPS applications
VCE(ON) at 25 °C at 80 A
2.11 V
• PressFit pins technology
IC at 80°C
96 A
• Direct mounting to heatsink















FRED Pt® AP DIODE, TJ = 150 °C
VRRM
600 V
IF(DC) at 80 °C
11 A
VF at 25 °C at 5 A
1.1 V
FRED
Pt®
CHOPPER DIODE, TJ = 150 °C
VR
600 V
IF(DC) at 80 °C
22 A
VF at 25 °C at 60 A
2.07 V
Speed
30 kHz to 150 kHz
Package
MTP
Circuit
Dual forward
ABSOLUTE MAXIMUM RATINGS
PARAMETER
IGBT
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
VCES
600
V
Gate to emitter voltage
VGE
± 20
V
Maximum continuous collector current
at VGE = 15 V, TJ = 150 °C maximum
Pulse collector current
IC
ICM
TC = 25 °C
138
TC = 80 °C
96
(1)
Clamped inductive load current
ILM
Maximum power dissipation
PD
330
A
330
TC = 25 °C
543
W



PATENT(S): www.vishay.com/patents 
This Vishay product is protected by one or more United States and International patents.
Revision: 15-Feb-17
Document Number: 96009
1
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ABSOLUTE MAXIMUM RATINGS
PARAMETER
Repetitive peak reverse voltage
Antiparallel
Diode
Maximum continuous forward current
TJ = 150 °C maximum
Maximum non-repetitive peak current
Maximum power dissipation
Repetitive peak reverse voltage
Chopper
Diode
Maximum continuous forward current
TJ = 150 °C maximum
Maximum non-repetitive peak current
SYMBOL
TEST CONDITIONS
VRRM
IF(DC)
IFSM
PD
IFSM
UNITS
600
V
TC = 25 °C
17
TC = 80 °C
11
10 ms sine or 6 ms rectangular
pulse, TJ = 25 °C
60
TC = 25 °C
VRRM
IF
MAX.
A
24
W
600
V
TC = 25 °C
33
TC = 80 °C
22
10 ms sine or 6 ms rectangular
pulse, TJ = 25 °C
135
TC = 25 °C
57
A
W
Maximum power dissipation
PD
Maximum operating junction
temperature
TJ
150
Storage temperature range
TStg
-40 to +150
Isolation voltage
VISOL
TJ = 25 °C, all terminals shorted,
f = 50 Hz, t =1 s
°C
3500
V
Notes
• Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
(1) V
CC = 300 V, VGE = 15 V, L = 500 μH, Rg = 4.7 , TJ = 150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)
IGBT
PARAMETER
SYMBOL
Collector to emitter breakdown voltage
BVCES
Temperature coefficient of
breakdown voltage
VBR(CES)/TJ
Collector to emitter voltage
VCE(ON)
Gate threshold voltage
VGE(th)
Chopper
Diode
MIN.
TYP.
600
-
-
V
IC = 1.0 mA (25 °C to 125 °C)
-
0.6
-
V/°C
VGE 15 V, IC = 80 A
-
2.11
2.48
VGE = 15 V, lC = 80 A, TJ = 125 °C
-
2.43
-
3.2
4.4
6.2
V
VCE = VGE,
IC = 1.0 mA (25 °C to 125 °C)
-
-12
-
mV/°C
-
97
-
S
VCE = VGE, IC = 750 μA
MAX. UNITS
V
Temperature coefficient of
threshold voltage
VGE(th)/TJ
Forward transconductance
gfe
VCE = 20 V, IC = 80 A
Transfer characteristics
VGE
VCE = 20 V, IC = 80 A
-
6.6
-
V
VGE = 0 V, VCE = 600 V
-
8
100
μA
Collector to emitter leakage current
ICES
VGE = 0 V, VCE = 600 V,
TJ = 125 °C
-
0.1
-
mA
Gate to emitter leakage
IGES
VGE = ± 20 V
-
-
± 250
nA
BVRRM
IR = 1.5 mA
V
Blocking voltage
AP Diode
TEST CONDITIONS
VGE = 0 V, IC = 1.5 mA
Forward voltage drop
VFM
Forward voltage drop
VFM
Blocking voltage
Reverse leakage current
BVRM
IRM
600
-
-
IF = 5 A
-
1.1
1.27
IF = 5 A, TJ = 125 °C
-
0.96
-
IF = 60 A
-
2.07
2.53
IF = 60 A, TJ = 125 °C
-
1.87
-
IR = 100 μA
600
-
-
VRRM = 600 V
-
2
70
VRRM = 600 V, TJ = 125 °C
-
12
-
V
V
μA
Revision: 15-Feb-17
Document Number: 96009
2
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SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
Qg
Gate to emitter charge (turn-on)
Qge
Gate to collector charge (turn-on)
Qgc
TEST CONDITIONS
IC = 60 A
VCC = 400 V
VGE = 15 V
MIN.
TYP.
MAX.
-
540
-
-
84
-
-
192
-
Turn-on switching loss
Eon
-
0.51
-
Turn-off switching loss
Eoff
-
2.66
-
-
3.17
-
-
173
-
Total switching loss
Etot
Turn-on delay time
td(on)
IC = 150 A, VCC = 300 V,
VGE = 15 V, Rg = 4.7 ,
L = 500 μH, TJ = 25 °C (1)
-
79
-
td(off)
-
374
-
tf
-
66
-
Turn-on switching loss
Eon
-
0.66
-
Turn-off switching loss
Eoff
-
2.75
-
-
3.41
-
-
167
-
Rise time
Turn-off delay time
Fall time
PFC IGBT
SYMBOL
Total gate charge (turn-on)
tr
Total switching loss
Etot
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
IC = 150 A, VCC = 300 V,
VGE = 15 V, Rg = 4.7 ,
L = 500 μH, TJ = 125 °C (1)
-
80
-
td(off)
-
389
-
tr
tf
-
69
-
Input capacitance
Cies
-
14 020
-
Output capacitance
Coes
-
1010
-
Reverse transfer capacitance
Cres
-
174
-
Reverse bias safe operating area
RBSOA
VGE = 0 V
VCC = 30 V
f = 1 MHz
IC = 330 A, VCC = 300 V,
VP = 600 V, Rg = 4.7 ,
VGE = 15 V, L = 500 μH,
TJ = 150 °C
UNITS
nC
mJ
ns
mJ
ns
pF
Full square
Note
(1) Energy losses include “tail” and diode reverse recovery.
RECOVERY PARAMETER (TJ = 25 °C unless otherwise noted)
PARAMETER
Peak reverse recovery current
AP Diode
Chopper
Diode
SYMBOL
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
Peak reverse recovery current
Irr
Reverse recovery time
trr
Reverse recovery charge
Qrr
TEST CONDITIONS
IF = 10 A
dI/dt = 200 A/μs
Vrr = 200 V
IF = 50 A
dI/dt = 200 A/μs
Vrr = 200 V
IF = 50 A
dI/dt = 200 A/μs
Vrr = 200 V, TJ = 125 °C
MIN.
TYP.
MAX.
UNITS
-
10
-
A
-
104
-
ns
-
537
-
nC
-
4.7
-
A
-
73
-
ns
-
171
-
nC
-
10.3
-
A
-
140
-
ns
-
716
-
nC
Revision: 15-Feb-17
Document Number: 96009
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THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Resistance
R
TJ = 25 °C
-
30 000
-

B value
B
TJ = 25 °C/TJ = 85 °C
-
4000
-
K
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
IGBT
Junction to case IGBT thermal resistance
-
-
0.23
AP FRED Pt
Junction to case diode thermal resistance
-
-
5.1
FRED Pt
Junction to case diode thermal resistance
-
-
2.2
-
0.06
-
°C/W
-
-
4
Nm
-
65
-
g
RthJC
Case to sink, flat, greased surface per module
Mounting torque ± 10 % to heatsink
RthCS
(1)
Approximate weight
°C/W
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound.
300
140
250
120
TJ = 25 °C
200
DC
100
IC (A)
Allowable Case Temperature (°C)
160
80
60
TJ = 125 °C
150
TJ = 150 °C
100
40
50
20
0
0
0
20
40
60
80
100
120
140
0
160
1.0
2.0
IC - Continuous Collector Current (A)
3.0
4.0
6.0
VCE (V)
Fig. 1 - Allowable Case Temperature vs. Continuous Collector
Current (Maximum IGBT Continuous Collector Current vs. Case
Temperature)
Fig. 3 - IC vs. VCE
(Typical IGBT Output Characteristics, VGE = 15 V)
1000
300
VGE = 12 V
VGE = 15 V
VGE = 18 V
250
100
VGE = 9 V
IC (A)
200
IC (A)
5.0
10
150
100
1
50
0.1
0
1
10
100
1000
0
1.0
2.0
3.0
4.0
5.0
6.0
VCE (V)
VCE (V)
Fig. 2 - IC vs. VCE
(IGBT Reverse BIAS SOA, TJ = 150 °C, VGE = 15 V)
Fig. 4 - IC vs. VCE
(Typical IGBT Output Characteristics, TJ = 125 °C)
Revision: 15-Feb-17
Document Number: 96009
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160
100
VCE = 20 V
140
TJ = 125 °C
90
80
120
70
60
TJ = 125 °C
80
IF (A)
IC (A)
100
50
40
60
30
TJ = 25 °C
40
TJ = 150 °C
20
20
10
0
0
3
4
5
6
7
8
TJ = 25 °C
0
0.5
1.0
1.5
VGE (V)
3.0
Fig. 8 - IF vs. VFM
(Typical Antiparallel Diode Forward Characteristics)
160
Allowable Case Temperature (°C)
5.5
5.0
TJ = 25 °C
4.5
VGEth (V)
2.5
VFM (V)
Fig. 5 - IC vs. VGE
(Typical IGBT Transfer Characteristics)
4.0
3.5
TJ = 125 °C
3.0
2.5
2.0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
140
120
DC
100
80
60
40
20
0
0
1.0
2
4
6
8
10
12
14
16
18
20
IC (mA)
IF - Continuous Forward Current (A)
Fig. 6 - VGEth vs. IC
(Typical IGBT Gate Threshold Voltage)
Fig. 9 - Allowable Case Temperature vs. Continuous Forward
Current (Maximum Antiparallel Diode Continuous
Forward Current vs. Case Temperature)
1
160
TJ = 150 °C
140
TJ = 125 °C
0.1
120
100
0.01
IF (A)
ICES (mA)
2.0
TJ = 25 °C
80
60
TJ = 150 °C
0.001
40
TJ = 125 °C
20
0.0001
TJ = 25 °C
0
100
200
300
400
500
600
VCES (V)
Fig. 7 - ICES vs. VCES
(Typical IGBT Zero Gate Voltage Collector Current)
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VFM (V)
Fig. 10 - IF vs. VFM
(Typical Chopper Diode Forward Characteristics)
Revision: 15-Feb-17
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1000
td(off)
140
120
Switching Time (ns)
Allowable Case Temperature (°C)
160
DC
100
80
60
40
td(on)
100
tf
tr
20
0
10
0
5
10
15
20
25
30
35
40
0
20
40
60
80
100
120
140
160
IF - Continuous Forward Current (A)
IC (A)
Fig. 11 - Allowable Case Temperature vs. Continuous Forward
Current (Maximum Chopper Diode Continuous Forward Current
vs. Case Temperature)
Fig. 14 - Switching Time vs. IC
(Typical IGBT Switching Time vs. IC)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
0.1
10
TJ = 150 °C
9
8
TJ = 125 °C
7
Energy (mJ)
IRM (mA)
0.01
TJ = 25 °C
0.001
6
Eoff
5
4
Eon
3
2
1
0.0001
0
100
200
300
400
500
600
0
5
10
15
20
25
30
35
40
45
50
VR (V)
Rg (Ω)
Fig. 12 - IRM vs. VR
(Typical Chopper Diode Reverse Leakage Current)
Fig. 15 - Energy Loss vs. Rg
(Typical IGBT Energy Loss vs. Rg)
TJ = 125 °C, VCC = 300 V, IC = 150 A, VGE = 15 V, L = 500 μH
3
10 000
Switching Time (ns)
2.5
Energy (mJ)
2
1.5
Eoff
1
Eon
1000
td(off)
td(on)
tr
100
tf
0.5
0
10
0
20
40
60
80
100
120
140
160
IC (A)
Fig. 13 - Energy Loss vs. IC
(Typical IGBT Energy Loss vs. IC)
TJ = 125 °C, VCC = 300 V, Rg = 4.7 , VGE = 15 V, L = 500 μH
0
5
10
15
20
25
30
35
40
45
50
Rg (Ω)
Fig. 16 - Switching Time vs. Rg
(Typical IGBT Switching Time vs. Rg)
TJ = 125 °C, VCC = 300 V, IC = 150 A, VGE = 15 V, L = 500 μH
Revision: 15-Feb-17
Document Number: 96009
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200
200
180
180
160
160
TJ = 125 °C
140
trr (ns)
trr (ns)
TJ = 125 °C
140
120
120
100
TJ = 25 °C
100
80
80
60
40
60
100
200
300
400
100
500
200
300
400
500
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 17 - trr vs. dIF/dt
(Typical Antiparallel Diode Reverse Recovery Time vs. dIF/dt)
Vrr = 200 V, IF = 10 A
Fig. 20 - trr vs. dIF/dt
(Typical Chopper Diode Reverse Recovery Time vs. dIF/dt)
Vrr = 200 V, IF = 50 A
30
28
26
24
22
20
18
16
14
12
10
8
6
4
20
18
16
TJ = 125 °C
14
TJ = 125 °C
12
Irr (A)
Irr (A)
TJ = 25 °C
TJ = 25 °C
10
TJ = 25 °C
8
6
4
2
0
100
200
300
400
500
100
200
300
400
500
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 18 - Irr vs. dIF/dt
(Typical Antiparallel Diode Reverse Recovery Current vs. dIF/dt)
Vrr = 200 V, IF = 10 A
Fig. 21 - Irr vs. dIF/dt
(Typical Chopper Diode Reverse Recovery Current vs. dIF/dt)
Vrr = 200 V, IF = 50 A
1200
1900
1100
1700
1000
TJ = 125 °C
1500
800
Qrr (nC)
1300
Qrr (nC)
TJ = 125 °C
900
1100
900
700
600
500
400
TJ = 25 °C
700
TJ = 25 °C
300
200
500
100
300
0
100
200
300
400
500
100
200
300
400
500
dIF/dt (A/μs)
dIF/dt (A/μs)
Fig. 19 - Qrr vs. dIF/dt
(Typical Antiparallel Diode Reverse Recovery Charge vs. dIF/dt)
Vrr = 200 V, IF = 10 A
Fig. 22 - Qrr vs dIF/dt
(Typical Chopper Diode Reverse Recovery Charge vs. dIF/dt)
Vrr = 200 V, IF = 50 A
Revision: 15-Feb-17
Document Number: 96009
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ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
0.1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 23 - ZthJC vs. t1 Rectangular Pulse Duration
(Maximum Thermal Impedance ZthJC Characteristics - (IGBT))
ZthJC - Thermal Impedance
Junction to Case (°C/W)
10
1
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 - Rectangular Pulse Duration (s)
Fig. 24 - ZthJC vs. t1 Rectangular Pulse Duration
(Maximum Thermal Impedance ZthJC Characteristics - (Chopper Diode))
Revision: 15-Feb-17
Document Number: 96009
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CIRCUIT CONFIGURATION
E1
F1
Q1
D1
D3
A7
E6
M2
M3
A1
B1
E7
Th
Q4
G6
D2
D4
G7
M7
I1
L1
ORDERING INFORMATION TABLE
Device code
VS-
150
MT
060
W
DF
-P
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating (150 = 150 A)
3
-
Essential part number (MT = MTP package)
4
-
Voltage code x 10 = Voltage rating (example: 060 = 600 V)
5
-
Die IGBT technology (W = Warp Speed IGBT)
6
-
Circuit configuration (DF = Dual forward)
7
-
Pinout code (PressFit pins)
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95567
Revision: 15-Feb-17
Document Number: 96009
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Outline Dimensions
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Vishay Semiconductors
MTP PressFit
3 ± 0.15
DIMENSIONS in millimeters
Ø5
Ø 2.5
8
1.5
20 ± 0.2
2.5
17 ± 0.35
13.5 ± 0.2
Ø 2.1 ± 0.1
SECTION B-B
SCALE 4 : 1
45 ± 0.3
39.5 ± 0.3
1.3
A
B C
D E
F
G H
I
L M
B
1
B
22.8
4
15.2
3
7.6
27.5 ± 0.3
31.8 ± 0.2
33.2 ± 0.3
2
DETAIL A
SCALE 4 : 1
5
6
7
R
6
2.
5°
6
x4
6
12
Pin position
0.4
18
24
30
48.7 ± 0.3
63.5 ± 0.3
Revision: 08-Nov-16
Document Number: 95567
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Revision: 08-Feb-17
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Document Number: 91000