Guidelines for an IEDM Paper
M. Takayanagi1, K. Rim2, and S. De Gendt3
1
Mixed Signal IC Div, Toshiba Corp, Tokyo, Japan, email: [email protected]
2
Qualcomm Inc, San Diego, CA, USA, 3imec, Leuven, Belgium
Abstract—Basic guidelines for the preparation of a technical
paper for an IEEE International Electron Device Meeting are
presented. This electronic document is a “live” template. The
various components of your paper [title, text, headings, etc.]
are already defined, as illustrated by the portions given in this
document. The maximum paper length is 4 pages consisting of
up to 2 pages of text and up to 2 pages of figures. It should
concisely state what was done, how it was done, principal
results, and their significance.
I.
INTRODUCTION
This template provides authors with most of the formatting
specifications needed for preparing electronic versions of
IEDM papers. All standard paper components have been
specified for three reasons: (1) ease of use when formatting
individual papers, (2) automatic compliance to electronic
requirements that facilitate the concurrent or later production of
electronic products, and (3) conformity of style throughout a
conference’s proceedings. Margins, column widths, line
spacing, and type styles are built-in; examples of the type styles
are provided throughout this document and are identified in
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components, such as multi-leveled equations, graphics, and
tables are not prescribed, although the various table text styles
are provided. The formatter will need to create these
components, incorporating the applicable criteria that follow.
II.
EASE OF USE
A. Template (Heading 2)
This template has been tailored for output on US letter-sized
paper.
B. Maintaining the Integrity of the Specifications
The template is used to format your paper and style the text.
All margins, column widths, line spaces, and text fonts are
prescribed; please do not alter them. You may note
peculiarities. For example, the heading margin in this template
measures proportionately more than is customary. This
measurement and others are deliberate, using specifications that
anticipate your paper as one part of the entire proceedings, and
not as an independent document. Please do not revise any of the
current designations.
III. CONFERENCE PAPER PREPARATION
The maximum length of a paper for all invited, regular and
late news is 4 pages, consisting of up to 2 pages of text and up
to 2 pages of figures. Please use automatic hyphenation. Be sure
your sentences are complete and that there is continuity within
your paragraphs. Check the numbering of your graphics
(figures and tables) and make sure that all appropriate
references are included.
Please take note of the following items when proofreading
spelling and grammar:
A. Abbreviations and Acronyms
Define abbreviations and acronyms the first time they are
used in the text, even after they have been defined in the
abstract. Abbreviations such as IEEE, SI, ac, dc, and rms do not
have to be defined. Do not use abbreviations in the title or
section headings unless they are unavoidable.
B. Units

Metric units are preferred for use in IEEE publications
in light of their global readership and the inherent
convenience of these units in many fields. In particular,
the use of the International System of Units (SI Units)
is advocated. An exception is when U.S. Customary
units are used as identifiers in trade, such as 3.5-inch
disk drive.

Avoid combining SI and U.S. Customary units, such as
current in amperes and magnetic field in oersteds. This
often leads to confusion because equations do not
balance dimensionally. If you must use mixed units,
clearly state the units for each quantity that you use in
an equation.

Do not mix complete spellings and abbreviations of
units: “Wb/m2” or “webers per square meter”, not
“webers/m2”. Spell out units when they appear in text:
“. . . a few henries”, not “. . . a few H”.

Use a zero before decimal points: “0.25”, not “.25”.
Use “cm3”, not “cc”. (bullet list)
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your paper is permissible (Insert | Equation or MathType
Equation). "Float over text" should not be selected.
Number equations consecutively. Equation numbers, within
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tab stop. To make your equations more compact, you may use
the solidus ( / ), the exp function, or appropriate exponents.
Italicize Roman symbols for quantities and variables, but not
Greek symbols. Use a long dash, as shown in (1), rather than a
hyphen for a minus sign. Punctuate equations with commas or
periods when they are part of a sentence, as in



Note that the equation above is centered using a center tab stop.
Be sure that the symbols in your equation have been defined
before or immediately following the equation. Use “(1)”, not
“Eq. (1)” or “equation (1)”, except at the beginning of a
sentence: “Equation (1) is . . .”
IV. USING THE TEMPLATE
This document is highly recommended to use as a template
for preparing your Conference paper. You may type over
sections of the document, cut and paste into it, and/or use
markup styles.
Duplicate the template file by using the Save As command,
and use the naming convention prescribed by your conference
for the name of your paper.
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Please keep your affiliations as succinct as possible (for
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E. Identify the Headings
Headings are organizational devices that guide the reader
through your paper. There are two types: component headings
and text headings.
Component headings identify the different components of
your paper and are not topically subordinate to each other.
Examples include ACKNOWLEDGMENTS and REFERENCES.
Run-in headings, such as “Abstract”, will require you to apply
a style (in this case, italic) in addition to the style provided by
the drop down menu to differentiate the heading from the text.
Text headings organize the topics on a relational,
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text heading because all subsequent material relates and
elaborates on this one topic. If there are two or more sub-topics,
the next level heading (uppercase Roman numerals) should be
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then no subheadings should be introduced.
F. Figures and Tables
1) Positioning Figures and Tables: Large figures and
tables may span across both columns. Captions should be below
the figure or table. You can have up to 2 pages of figures and
tables following your 2 pages of text. Use the abbreviation “Fig.
1”, even at the beginning of a sentence.
Figure Labels: Use 8 point Times New Roman for Figure
labels. “Magnetization, M”, not just “M”. If including units in
the label, present them within parentheses. Do not label axes
only with units. In the example, write “Magnetization (A/m)”
Do not label axes with a ratio of quantities and units. For
example, write “Temperature (K)”, not “Temperature/K”.
Figures and tables should be numbered consecutively. Use
Arabic numerals for figures and Roman numerals for tables.
We suggest that you use a text box to insert a graphic
(which is ideally a 300 dpi TIFF or EPS file, with all fonts
embedded) because, in an MSW document, this method is
somewhat more stable than directly inserting a picture.
To have non-visible rules on your frame, use the
MSWord “Format” pull-down menu, select Text Box >
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Figure 1. Example of a figure caption. (figure caption)
ACKNOWLEDGMENT
The following is an example of an acknowledgment.
The authors gratefully acknowledge the contributions of T.
Edison, G. Westinghouse, N. Tesla, A. Volta and A. Ampere to
the electric power industry.
REFERENCES
[1] J. F. Fuller, E. F. Fuchs, and K. J. Roesler, "Influence of harmonics on
power distribution system protection," IEEE Trans. Power Delivery, vol.
3, pp. 549-557, Apr. 1988.
[2] R. J. Vidmar. (1992, Aug.). On the use of atmospheric plasmas as
electromagnetic reflectors. IEEE Trans. Plasma Sci. [Online]. 21(3), pp.
[3] E. Clarke, Circuit Analysis of AC Power Systems, vol. I. New York: Wiley,
1950, p. 81.
[4] E. E. Reber, R. L. Mitchell, and C. J. Carter, "Oxygen absorption in the
Earth's atmosphere," Aerospace Corp., Los Angeles, CA, Tech. Rep. TR0200 (4230-46)-3, Nov. 1968.
[5] Y. Yorozu, M. Hirano, K. Oka, and Y. Tagawa, “Electron spectroscopy
studies on magneto-optical media and plastic substrate interface,” IEEE
Transl. J. Magn. Japan, vol. 2, pp. 740–741, August 1987 [Digests 9th
Annual Conf. Magnetics Japan, p. 301, 1982].
[6] L. Alqueres and J. C. Praca, "The Brazilian power system and the challenge
of the Amazon transmission," in Proc. 1991 IEEE Power Engineering
Society Transmission and Distribution Conf., pp. 315-320
80%
60%
20
35%
15
25%
10
5
0
Without Hf-N
15%
With Hf-N
0.6
(HfSiO,HfO2)
0.2
Kaneko et al.
0
10 20 30 40 50
100
20
10
Hf-gradient HfSiON
p Si
15
10
p+Si
Si
B
1022
1021
1020
1019
1018
1017
1016
1015
Si-sub
No B penetration
Hf
200
300
Hf, Si int.[a.u.]
+
B conc. [/cm3]
Capacitance [pF]
Hf,Si-conc. [at.%]
Hf,Si-conc.
[at.%]
30
400
Depth [nm]
EOT=
2.9nm
Vfb=0.64V
5
0
0
2
3
4
5
depth [nm]
[nm]
6
0.0
[cm2/Vsec]
500
400
423K
373K

 [cm 2/Vsec]
600
300K
300
1000
900
800
700
600
Ns=5x1012cm-2
500
Ns=2x1011cm-2
400
223K
Nsub=3x1016cm-3
Nsub=3x1016cm-3
200
10
11
10
12
Ns [cm-2]
10
13
Fig. 7 Additional mobility component, ,
extracted using Matthiessen’s rule plotted as a
function of inversion-layer carrier density, Ns.
223K
300K
373K
423K
HfSiON
473K
0.1
1
Eeff [MV/cm]
300
200
Nsub=3x1016cm-3
SiO2
Vg [V]
7
473K
40
Fig. 3. m,eff of p+Si and n+Si gate electrodes
on HfSiON films as a function of the Hf-ratio.
0.5
Fig. 5. C-V for n+ or p+Si/Hf-gradient
Fig. 4. (a)Cross-sectional TEM and (b) depth
HfSiON/
p-Si MOS capacitors. Inset shows no
profiles of Hf and Si (high-resolution RBS) in
B penetration occurs at the p+ device to the Sithe Hf-composition gradient HfSiON film.
sub.(backside-SIMS).
1000
900
800
700
30
100
-2.0 -1.5 -1.0 -0.5
1
20
1000
+
n Si
20
10
Hf/(Hf+Si) [%]
Fig. 2. Dependence of Vfb(p+Si)- Vfb (n+Si)
on the Hf-ratio in HfSiON films. Results
for HfO2 and HfSiO are also shown.
25
40
n+Si
ideal
0
Hf/(Hf+Si) [%]
Sisub.
Hf-gradient
HfSiON
p+Si
4.5
4.0
(HfSiO)
(a)
Poly
-Si
5.0
0.0
0 10 20 30 40 50 60
[N] (at.%)
Fig. 1. Dielectric constant of various
HfSiON with different Hf, N content.
Hobbs et al.
0.4
poly-Si/HfSiON/p-Si
ideal
This work
(HfSiON)
0.8
m,eff [eV]
25
1.0
Electron Mobility [cm 2/Vsec]
100%
5.5
poly-Si/Hf-based high-k/p-Si
200
300
400
500
Temperature [K]
Fig. 8. Temperature dependence of  at low
Ns (2x1011 cm-2) and high Ns (5x1012 cm-2).
Fig. 6. Dependence of eff on Eeff of HfSiONnMOSFET compared to SiO2-nMOSFET at 223
K to 473 K.
Threshold voltage ( V )
As-depo.
30 Hf/(Hf+Si):
Vfb(p+Si)-Vfb(n+Si) [V]
Dielectric Constant (Static)
35
0.6
0.5
0.4
0.3
0.2
Hf 30%, 2nm
Hf 50%, 3nm
0.1
0.0
0.05
0.10
0.15
0.20
0.25
0.30
Gate length ( m )
Fig. 9. Vth vs. Lg compared between Hf30%
and Hf50%. EOT=1.8 nm for both Hf30% and
Hf50%.
25
Hf(30%)
Hf(50%)
SiO2
Vth ( mV )
20
15
10
5
200 nMOSFET
0
0
Fig. 10. Distribution of electric field at gate-to-extension
region of k=3.9((a)) and 15 ((b))
1
2
3
4
5
6
7
-1/2
Fig. 11. Ion-Ioff characteristics
compared
between
(Weff x Leff
)
Hf30% and Hf50%. EOT=1.8 nm for both Hf30%
and Hf50%.
Vd ( V )
Lifetime (Ion=10%) ( s )
Vth ( V )
10
0.513
10
Hf30%, CVD-SiO2
0.012
Hf50%, CVD-SiO2
10
Hf50%, CVD-SiN
-0.511
10
104
HfSiON(50%)
2
10
SiO12 interfacial layer
Hf(30%)
SiO2
Hf(50%)
10
10
Lg
EOT( m
( nm))
0.7
0.8
100
10-1
10
Hf30%
SiO2
HfSiON(50%)
-2
-3
SiO2 interfacial layer
0.9
10-5
101
102
103
104
105
Frequency ( Hz )
800
Drain current ( A/m )
-5
10-6
Vd=0.05 V
10-7
10-8
10-9
10-10
10-11
10-12
600
400
200
10-13
-1.0
-0.5
0.0
0.5
This work
ITRS
hp90 nm
Vdd [V]
1.2
1.2
Lg [nm]
65
65
EOT [nm]
2.0
2.1
Ion(n/p) [µA/µm]
400 / 160
440
Ioff(n/p) [pA/µm]
18 / 16
10
Ig [pA/µm]
1
3
Vg=0.7-1.5 V, 0.1 V step
Vd=1.2 V
10-4
10-14
-1.5
101
Fig. 13. Cross sectional TEM images at the gate edge of HfSiON-MOSFETs with (a) Hf30%
with CVD-SiO2, (b)Hf50-% with CVD-SiO2 and (c)Hf50% with CVD-SiN offset spacers.
10-3
Drain current ( A/m )
5 0.6
nm
SiN
102
1/Vd ( V )
Fig. 12 Roll-off curve of HfSiON- CMOSFETs
compared among Hf30% with CVD-SiO2, Hf50% with CVD-SiO2 and Hf50% with CVD-SiN
offset spacers.
10
0.5
Hf50%
SiO2
10-4
Si-sub.
10-1
0.4
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
Poly-Si
103
interfacial 10
layer
0
-1.010
100.00 0.05 0.10 0.15 0.20 0.25 0.30
104
SiO2 layer
Lg=65 nm
n-FET
Vd=Vg stress
5
HfSiON(30%)
103
Hf(30%)
Hf(50%)
10
1.2
SiO2
10 years
107
106
1.4
2
Predicted by V-model
1.6
Poly-Si
Poly-Si
8
2
109
10
Lifetime @1.2V ( s )
2.2 2.0 1.8
1/f - noise ( V m /Hz )
1.014
1.0
1.5
Gate voltage ( V )
Fig. 14. Sub-threshold characteristics of 65 nm
gate length CMOSFET with optimized process
0
-1.5
-1.0
-0.5
0.0
0.5
1.0
1.5
Drain voltage ( V )
Fig. 15. Drain current for 65 nm gate length
CMOSFET.
Table 1. Summary of performance for 65 nm
gate length CMOSFET with HfSiON.