Noise Analysis of CMOS Readouot Ciruits “A CMOS 0.35 μm Analog Front-End Electronics for Gamma Ray Medical Imaging” suggest a noise model and analysis for circuit of analog signal processing circuit as following figure and equations. They focus on three separate contributions determine the ENC: 1) ENCd : The input transistor channel thermal 2) ENCf : Flicker noise 3) ENCo : Detector leakage current and feedback resistor thermal noise These factors are depend on the circuit design. ENC They figure out a optimum transistor width(W) which makes noise minimized with fixed drain current of CSA. Following their analysis, optimum width of input transistor is about 1 mm. Although the optimal value from the analysis minimize the noise, 1 mm is too large to be integrated. And also, we have to consider about gain and linearity of CSA. If W is increased with fixed ID (100 μA), VOV and gm would be decreased by W. Input Transistor Width [Meter] Large transistor with respectively low drain current causes low gain and linearity. Noise Analysis of CMOS readouot ciruits gm As we mentioned above, 1mm width transistor has only 0.02 V overdrive voltage depicted on a left figure. 0.02 V of overdrive voltage is very close to threshold voltage of transistor. In the right graph, we can see the gm which is small and nonlinear. New Value => good gain & linearity Old Value => Poor gain & linearity Gate Voltage [V] ENC We suggest constant overdrive voltage analysis to find out the optimum width of the transistor has small size and high linearity. Fixing the overdrive voltage to 1 V, we recalculate ENC and show on the left figure. With same noise performance, new optimum value of transistor width is much smaller size (15 μm), much higher linearity. Input Transistor Width [Meter] Input Transistor Width [Meter]
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