RPC56EL70L5 Heavy Ions
radiation test TRB
Technology Transfer Activity Objectives
The main target was to verify SEL occurencies on 6 different samples at
80°C while irradieting. The irradiation cockatil was choosen to obtain:
 Surface LET 65MeV*cm2/mg (3 samples)
 Surface LET 34MeV*cm2/mg (3 samples)
Total fluence for each sample was 107/cm2, the flux was around 104/cm2/s.
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Connections
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Evaluation of Ion Energy Deposition
SRIM 2013 simulator:
technology/material info by STM
ion typology/energy info by LNS
Energy
deposition
Passivation
Metal layer
129Xe ions simulated LET in silicon wafer in
MeV*cm2/mg units as a function of depth.
Passivation
Metal layer
Passivation
Metal layer
Active Layer
Silicon Die
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78Kr
ions simulated LET in silicon wafer in
MeV*cm2/mg units as a function of depth.
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Test Setup
PCB ready for the ion irradiation
Block schematic of uC under test
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Decapped DUT placed
on dedicated PCB
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Test Setup – misura flusso
Chip Irradiation Phase
ST chip under
test
Kapton film
Vacuum
tube
Ion counting
system
Ion beam flux
measurement phase
Kapton film
Vacuum
tube
Ion counting
system
PCB
PCB
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Test Setup – Software di controllo
• Controllo real time stato DUT
• Controllo real time posizione
motore
• Scrittura su file binario di correnti,
tensioni, numero interruzioni FW,
latchup… etc
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Test Result – Level 0
Campione
Ione
ST02
ST04
ST06
ST10
ST11
ST16
129Xe
Campione
Ione
ST02
ST04
ST06
ST10
ST11
ST16
129Xe
Fluenza
Flusso
Numero
(107 ioni/cm2) medio (104 avvenuti
ioni/s/cm2)
lacth-up
1.05
129Xe 1.04
129Xe 1.10
78Kr
1.01
78Kr
1.43
78Kr
1.06
1.50
0.84
1.13
0.77
0.97
1.13
1
500
0
148
434
313
Fluenza
Sezione d’urto SEL
7
2
(10 ioni/cm ) ed interruzioni FW
1.05
129Xe 1.04
129Xe 1.10
78Kr
1.01
78Kr
1.43
78Kr
1.06
1.12*10-5
4.76*10-5
1.4*10-5
2.91*10-5
4.65*10-5
3.24*10-5
Numero
interruzioni
firmware
Corrente
assorbita
(mA)
117
0
147
158
55
28
298±39
488±141
556±45
557±144
682±76
691±60
• Numerosi eventi di latch-up/interruzione su tutti i campioni
irraggiati. Il numero di eventi è limitato dai tempi di
rivelazione del malfunzionamento e dal tempo di POR
• Tempi di POR ≈ 2 s
• Tempi discriminazione interruzione ≈ FW 5 s
• Tempi discriminazione sovracorrente ≈ 100 ns
• Tutti i chip sono risultati non funzionanti a termine degli
irraggiamenti (minore assorbimento di corrente, nessuna risposta a
stimoli esterni, impossibilità di riprogrammazione)
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Test Result – Absorbed Currents
Sample ST02: details of aborbed currents. The time
span is the five seconds before a FW interruption.
Sample ST06: details of aborbed currents. The time span
is the five seconds before a Latch-Up occurence.
N. B. the obtained results are under NDA.
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Conclusions
• The activity started last April.
• Tests was executed in July.
• Test results was sent to Thales
at the end of July.
• The activity was formally closed
last week.
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Thank you!!!
Test Setup – Alimentazioni
Numero
Pin
6
16
21
27
50
56
58
72
91
95
97
126
130
Alimentazione
Funzione
VDD_HV_IO
VDD_HV_REG_0
VDD_HV_IO
VDD_HV_OSC
VDD_HV_ADDR0
VDD_HV_ADDR1
VDD_HV_ADV
VDD_HV_PMU
VDD_HV_IO
VDD_HV_REG_1
VDD_HV_FLA
VDD_HV_IO
VDD_HV_REG_2
Alimentazione pin I/O
Alimentazione regolatore PMU
Alimentazione pin I/O
Alimentazione oscillatori interni
Reference ADC0
Reference ADC1
Alimentazione ADC integrato
Alimentazione Power Management Unit
Alimentazione pin I/O
Alimentazione regolatore PMU
Alimentazione memoria FLASH
Alimentazione pin I/O
Alimentazione regolatore PMU
Block schematics of single supply chain
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