졸업작품계획서
1. 작품유형
- 논문
- 팀프로젝트
2. 작품제목 : Negative bias illumination stress instability in amorphous InGaZnO
thin film transistors with transparent source and drain
3. 제 작 자
학번
성명
연락처
담임교수
201101237
이종훈
010-7173-8781
박종태교수님
201301133
유슬기
010-3176-7637
박종태교수님
201301037
김재원
010-8832-4005
박종태교수님
Contents
Background/Motivation
Design Goal and Problem Definition
Solution Approach to the Problem
Team Activity Structure and
Required Activity for the Solution
• Expected Result/Output
• Team Resources and Time Line
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Background/Motivation
IGZO
indium
zinc
oxygen
gallium
Amorphous semiconductor
transparent crystalline semiconductor
→ High Resolution
Less leakage → reduce recharge time
→ Power Consumption 1/5
Design Goal and Problem Definition
For Ni, ITO, a-IGZO
Basic Property
Mobility
ΔVTH
Leff
ION/IOFF
Stress
Negative
Negative
Negative
Negative
Bias
Bias
Bias
Bias
Stress (NBS)
Temperature Stress (NBTS)
Illumination Stress (NBIS)
Temperature Illumination Stress (NBTIS)
Problem Definition : Only one measurement result → less reliability
Solution Approach to the Problem
The multiple measurements
Team Activity Structure and
Required Activity for the Solution
Probe station
Parameter Analyzer (B1500)
Expected Result/Output
Negative Bias Stress (NBS)
Unstability : Ni>ITO>a-IGZO
Negative Bias Temperature Stress (NBTS)
Unstability : Ni>ITO>a-IGZO
Negative Bias Illumination Stress (NBIS)
Unstability : a-IGZO>ITO>NI
Negative Bias Temperature Illumination Stress (NBTIS)
Unstability : Ni>a-IGZO, ITO
Ni is more unstable than ITO & a-IGZO
Team Resources and Time Line
Lee Jonghoon
Kim Jaewon
Yu Seulki
a-IGZO TFTs with Ni
a-IGZO TFTs with ITO
a-IGZO TFTs with InGaZnO
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Topic
Proposal
Basic Property
NBS
NBIS
NBTS & NBTIS
Write paper
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Thank you