Surface Science 488 (2001) 23±31 www.elsevier.com/locate/susc Adsorption and decomposition of C60 on Ni(1 1 0) surfaces V. Saltas, C.A. Papageorgopoulos * Department of Physics, University of Ioannina, P.O. Box 1186, GR-451 10 Ioannina, Greece Received 12 May 2000; accepted for publication 12 April 2001 Abstract In the present paper we study the adsorption of C60 on Ni(1 1 0) surfaces at RT and 650 K, as well as the desorption/ decomposition process. The investigation took place in UHV by means of Auger electron spectroscopy, low energy electron diraction, thermal desorption spectroscopy and work function (WF) measurements. The observed overlayer structures during C60 deposition at 650 K are in complete agreement with reported results. The sticking coecient is nearly the same for both RT and 650 K. Heating of the 1 ML C60 -covered Ni(1 1 0) surface, however, at 750 K, causes a partial fragmentation of C60 to a 2D graphite-like layer, while the remaining C60 molecules are rearranged in the 5 3 structure, in contrast to reported results. Further heating to 800 K results in the complete fragmentation of C60 accompanied by carbon desorption, possibly in molecular Cn n > 10 form. Above 800 K, the C of the graphite-like layer is desorbed in both atomic and molecular form. The WF at saturation coverage was found to be 5.61 eV for both deposition at RT and 650 K. This value is substantially greater than the average value of 5 eV, which has been suggested to hold for C60 overlayer systems, regardless of the metal substrate. Ó 2001 Elsevier Science B.V. All rights reserved. Keywords: Auger electron spectroscopy; Low energy electron diraction (LEED); Thermal desorption spectroscopy; Work function measurements; Adsorption kinetics; Carbon 1. Introduction Since the discovery of a method for producing macroscopic quantities of C60 [1], the interaction of C60 with metal surfaces has been studied intensively, by using a variety of surface analysis techniques [2±15]. This great interest arises mainly from the signi®cant physical properties of C60 based compounds, such as superconductivity, and possible applications of C60 in microelectronics [16±19]. In all cases, it is important to determine * Corresponding author. Tel.: +30-651-98570; fax: +30-65145381. E-mail address: [email protected] (C.A. Papageorgopoulos). the charge state of the C60 molecules. It is by now well established that C60 (with a coverage up to one physical monolayer) forms a chemical bond with metal surfaces and the electronic charge is transferred from the substrate to the overlayer C60 molecules [3,20±23]. The type of interaction and the charge transfer (CT) is strongly dependent upon the kind of the metal substrate [13]. The transferred charge has been found to vary from less than one electron up to six electrons per C60 molecule. The latter case appears when the metal substrates are covered by alkali [3,24]. When the alkali, however, are intermixed with fullerenes (superfullerides) up to 11 electrons are donated to each C60 molecule [25±27]. According to Maxwell et al., the bonding of C60 with metal substrates, 0039-6028/01/$ - see front matter Ó 2001 Elsevier Science B.V. All rights reserved. PII: S 0 0 3 9 - 6 0 2 8 ( 0 1 ) 0 1 1 0 5 - 0 24 V. Saltas, C.A. Papageorgopoulos / Surface Science 488 (2001) 23±31 can be intermediate up to strong covalent or intermediate ionic [28]. A strong predominately covalent bonding has been reported for one monolayer of C60 on Ni(1 1 0) surfaces and the CT has been found to be 2 1 electrons per molecule, leading to a metallic C60 overlayer [29]. In the latter case, the metal surface acts as catalyst for the thermal decomposition process of the deposited C60 molecules [23,30]. More recent reported photoemission studies suggest that 1 ML of C60 adsorbed on various metal substrates appears to have a work function (WF) value close to 5 eV, regardless of the metal substrate [28,31]. However, the existing WF measurements of the metallic C60 overlayer on dierent substrates are spread from 4.8 to 5.4 eV. In all the above cases the measured WF values arise from the cut o of the UPS spectra and there are no detailed WF studies during C60 deposition on metal substrates at room and elevated temperatures. In the present work we study the C60 adsorption on Ni(1 1 0) at RT and 650 K, using low energy electron diraction (LEED), Auger electron spectroscopy (AES), thermal desorption spectroscopy (TDS) and WF measurements. The thermal stability and the decomposition mechanism of the ordered C60 monolayer have been investigated as compared to the existing literature [23,30]. 2. Experiment The experiments were carried out in an ultrahigh vacuum chamber (base pressure 1 10 10 mbar) equipped with a cylindrical mirror analyzer for AES measurements, a quadrupole mass spectrometer for TDS measurements, a Kelvin probe for WF measurements and a LEED system for structural studies. C60 of 99.95% purity was evaporated onto the sample from a Ta crucible at 700 K. The C60 source was carefully outgassed for several hours, so the pressure during evaporation never exceed 1 10 9 mbar. A shutter between the source and the sample was used to control the deposition time. The Ni(1 1 0) sample was cleaned by Ar ion sputtering (1 KV, 10 lA) at 5 10 5 mbar for 10 min and subsequent annealing at 1000 K. This cycle was repeated several times until the AES peak heights of the main impurities (sulfur and carbon) had vanished and a well-de®ned LEED pattern of the 1 1 structure was observed. The temperature of the sample was measured by a chromel±alumel thermocouple inserted between the sample and its Ta foil case. The linear heating rate in the TD experiments was 15 K/s. The AES, WF and LEED measurements at the annealing procedure were taken after the sample was cooled down at RT. 3. Experimental results and discussion As mentioned in the introduction, there has already been substantial research on the adsorption of C60 on Ni(1 1 0). Well-ordered C60 structures have been observed only for growth temperatures above 620 K [29], while STM studies suggest that C60 induces a restructuring of the Ni(1 1 0) surface [12]. In this work the LEED observations have been repeated, in order to correlate them with the AES, WF and TDS measurements. Fig. 1 shows the Auger peak to peak heights (Ap-pH) of Ni-61 eV and C-272 eV during C60 deposition on Ni(1 1 0) at 650 K and the subsequent temperature increase of the C60 -covered Ni(1 1 0) surface, up to 900 K, in correlation with the LEED patterns. During the annealing procedure, the measurements were taken after cooling the sample at RT. As it is seen in Fig. 1, the peak height of C increases almost linearly up to 50 min and levels o for higher deposition time, while the Ni-61 eV signal decreases analogously. It is well known that deposited C60 on Ni(1 1 0) surfaces at 650 K saturates at the completion of 1 ML (physical monolayer) [29], that is, after 50 min of deposition one monolayer of C60 has been formed on the surface. At the third dose of deposition, a 5 3 LEED pattern appears, which maintains with increasing intensity up to the 13th dose. With more deposition, the pattern changes gradually to a hexagonal con®guration (hcp), and its intensity is maximized at the completion of 1 ML. The coverage of a complete 5 3 structure corresponds to 0.8 of a physical C60 monolayer. The V. Saltas, C.A. Papageorgopoulos / Surface Science 488 (2001) 23±31 25 Fig. 1. Auger peak to peak heights (Ap-pH) of Ni-61 eV and C-272 eV during C60 deposition on Ni(1 1 0) at 650 K and subsequent heating of the C60 -saturated Ni(1 1 0) surface up to 900 K. The observed LEED patterns are also indicated. fact, however, that this pattern appears at 0.19 of the physical monolayer, indicates that C60 initially forms islands, in agreement with reported observations [29]. Subsequent heating of the C60 -covered Ni(1 1 0) surface causes a gradual decrease of the C-272 eV peak, while the Ni-61 eV peak height increases analogously up to 900 K where C has been totally removed from the surface. At 700 K, the hcp pattern becomes streaky along the 1 1 0 direction of the substrate. As the temperature increases to 750 K, a streaky 5 3 pattern appears at Ep 33:5 eV, coexistent with rings visible at Ep 59 eV. At 800 K, a well-resolved ring dominates in the LEED pattern. This ring is formed by 12 diffused spots, and is superimposed with the 1 1 pattern of the substrate. The above LEED patterns and the corresponding sketches are shown in Fig. 2. Most likely, the observed ring at Fig. 2b consists of two similar hexagons rotated by 25° with respect to each other. Each hexagon corre which sponds to a lattice constant of 2:1 0:1 A, is 13% smaller than that of graphite (2.46 A). Cepek et al. observed a 4 5 pattern at 760 K, and a graphitic ring superimposed on the 4 5 structure at 800 K which, however, are not suciently clear in the published ®gure [23]. They attributed this 4 5 structure to atomic carbidic carbon formed on the surface after the fragmentation of the C60 molecules at 760 K. According to the same authors, the rings are due to graphitic domains formed on the Ni surface above 800 K. Despite our eort we did not observe any 4 5 pattern. Instead, heating at 750 K produced the 5 3 pattern coexisting with rings. Most likely, heating up to 750 K causes a partial fragmentation of C60 molecules, while the remaining C60 molecules are rearranged in a 5 3 structure. The fragments, lying on the Ni substrate, are structurally similar to a 2D graphite reduced in size by 13%. The divergence in the lattice constant from that of bulk graphite, can be explained by the interaction of the graphite overlayer with the Ni substrate, which causes a reduction in the C±C bond distance due to their CT to the substrate. This CT is consistent with the ®nding of Zandlberg et al. that graphite islands on metal substrates reduce the WF [32]. Schouten et al. observed a 4 5 carbon superstructure, which is formed on Ni(1 1 0) surface at the temperature range 620±670 K, after the decomposition of methane [33]. However, prolonged heating in vacuum at T > 600 K caused the disappearance of the 4 5 pattern due to the diusion of carbon into the bulk, while graphite rings were only observed in crystals that had been heavily doped with carbon. 26 V. Saltas, C.A. Papageorgopoulos / Surface Science 488 (2001) 23±31 Fig. 2. LEED patterns during heating of the C60 -saturated at 650 K Ni(1 1 0) surface. (a) Streaky 5 3 structure observed after heating at 750 K with Ep 34:5 eV. (b) Hexagonal rings superimposed to the 1 1 pattern of the substrate after heating at 800 K (Ep 59 eV). The corresponding sketches of the above LEED patterns are also shown. Full circles denote the integer order spots of the Ni substrate. This ®nding suggests that annealing the C- 4 5 structure to higher temperature should not result in the observation of graphite rings, as seen by Cepek et al., unless the Ni substrate is heavily doped with carbon [23]. We also note that the HREEL spectra of a monolayer of C60 on Ni(1 1 0) measured by Cepek et al. at 760 K [23] show a strong C60 contribution, indicating that a signi®- cant amount of C60 remains on the Ni surface at 760 K. If this was ordered, it would contribute to the observed 5 3 LEED pattern of C60 . The decrease of C-272 eV peak by heating from 650 to 750 K (Fig. 1) may indicate that part of C60 fragments are desorbed from the surface. With increasing temperature up to 800 K, almost all of the C60 molecules undergo fragmentation. As it is seen V. Saltas, C.A. Papageorgopoulos / Surface Science 488 (2001) 23±31 27 Fig. 4. Total area of TD spectra of Fig. 3 versus C60 coverage. Fig. 3. A series of TD spectra of atomic carbon for various coverages of C60 deposited on Ni(1 1 0) at 650 K. The linear heating rate is 15 K/s. in Fig. 2b, the graphite-like rings coexist with intense integer order spots of the substrate. A complete fragmentation of a physical ML of C60 would produce 5 MLs of atomic carbon, if all the fragments had remained on the surface. In this case, we would expect the integer order beams of the substrate to be very weak, in contrast to our observation. This argument, in correlation with the drastic decrease of C-272 eV peak from 750 to 850 K, indicates that a substantial amount of carbon has been removed from the surface in this temperature range. The mechanisms of C60 desorption and/or decomposition during heating will be further discussed in correlation with the following TDS and WF measurements. Fig. 3 shows a series of TD spectra of atomic carbon for dierent coverages of C60 deposited on Ni(1 1 0) at 650 K. For coverages up to 0.4 ML the spectrum shows one single broad peak with maximum intensity at 875 K. Above 0.4 ML this peak is reduced and a new peak appears at 900 K. With increasing coverage the latter peak dominates and shifts slightly to higher binding energy (BE), while the ®rst peak disappears. We believe that at low coverages the broad TD peak at 875 K is due to the C±Ni binding, while at higher coverages the C±C interaction dominates resulting the higher energy peak. The binding energies of the above peaks can be calculated by using an approximation formula suggested by Seebauer [34]: 1 ln Y ln Y Eb RT 2 ln Y Y ln Y 2 Y 2Y 2 1 where Y ln m0 T =b. In the above expression we assume a constant pre-exponential factor m0 1013 s 1 . We found that the BE corresponding to 875 and 920 K are 2.34 and 2.47 eV/atom, respectively. These values are relatively small as compared to those of carbides. This is consistent with our observation that the Auger lineshape of C-272 eV did not show the characteristic shape of carbides at temperatures up to 850 K. The small Auger C signal, however, does not allow exclusion of the 28 V. Saltas, C.A. Papageorgopoulos / Surface Science 488 (2001) 23±31 possibility of C diusion into the bulk or carbide formation at higher temperatures. The TD spectra of Fig. 3, suggest that there is no desorption of atomic carbon below 750 K. Most likely, molecular desorption takes place, mainly, in the form of Cn molecules with n > 10, since we did not observe any TD spectra of Cn molecules with n < 10. The desorption of elemental C above 800 K is due to the decomposition of the 2D graphitelike structure. The total area under the TD peaks versus C60 coverage is shown separately in Fig. 4. According to this ®gure, the area increases up to 0.4 MLs and subsequently decreases, i.e. the amount of atomic carbon, which is desorbed from the surface decreases substantially as the quantity of C60 approaches the coverage of one saturated layer. It seems that the desorption of C in the form of large molecules (clusters) is more probable at high coverages. Fig. 5 shows the WF change during C60 deposition on Ni(1 1 0) surface at RT, 650 K and following heating of 1ML C60 -covered Ni(1 1 0) at 650 K. As it is seen in this ®gure, the WF at the completion of 1 ML of C60 at 650 K and RT is 5.61 eV, considering that the WF of clean Ni(1 1 0) is 5.04 eV [35]. This value is substantially greater than the WF of the bulk C60 , 4.7 eV [36]. The WF initially increases almost linearly, then deviates from the linearity due to the depolarization eect, and reaches a maximum value. After the maximum value, the WF decreases slightly and levels o at the value of 5.61 eV. The ®nal decrease and leveling of the WF at RT may be attributed to a metalization of C60 at the completion of 1 ML on Ni(1 1 0), in agreement with the literature [29]. As it is seen in Fig. 5, the WF curve at 650 K does not reach the maximum value, and instead goes directly to the ®nal value of 5.61 eV. The fact that the value of 5.61 eV is substantially greater than 4.7 eV of the bulk C60 WF may be due to the CT from the Ni substrate to the C60 overlayer. The dierence between the WF curves at RT and 650 K (Fig. 5) may be explained by the dierent growth mechanisms. At RT the molecules are randomly distributed on the surface, while at 650 K, the LEED patterns suggest that the C60 molecules form ordered islands from the early stages of deposition and a coalescence of the islands leads to the ®nal hcp structure. A possible greater sticking coecient at RT than at 650 K is discounted, Fig. 5. WF change during C60 deposition on Ni(1 1 0) at 650 K and RT. The WF temperature dependence of the C60 -saturated at 650 K Ni(1 1 0) surface is also shown. V. Saltas, C.A. Papageorgopoulos / Surface Science 488 (2001) 23±31 29 Fig. 6. Ap-pH of Ni-61 eV and C-272 eV during C60 deposition on Ni(1 1 0) at RT. The corresponding Ap-pHs at 650 K are also shown for comparison. because according to Fig. 6, the Auger variations of C-272 eV and Ni-61 eV during deposition at RT are quite similar to those at 650 K. By heating the saturate monolayer of C60 , which has been deposited at 650 K on Ni(1 1 0) surface, the WF decreases initially by about 0.06 eV. This decrease is probably due to the C60 fragmentation and desorption of Cn molecules from the surface. This is in agreement with the AES and LEED measurements, since the Ap-pH decreases and the LEED pattern goes back to the 5 3. The latter WF value remains nearly constant within the experimental error, up to 800 K, where the hexagonal ring dominates in the LEED pattern. Above 800 K the WF decreases drastically up to 900 K, due to the desorption of C in molecular and/or atomic form from the graphite-like layer bound directly to the surface, in agreement with the TDS, AES and LEED measurements. It has been already reported that the electronic structure of a C60 monolayer adsorbed on metal surfaces is clearly metallic [29]. Maxwell et al. concluded, from all cases studied thus far, that the C60 adsorbed on metal surfaces appears to have a WF close to 5 eV [28]. The authors, however, do not have conclusive explanations for these results. Tsuei et al., on the other hand, based on the previous report [28], suggest that the measured WFs are a property of the metallic C60 overlayers that give similar values (5 eV) regardless of the metal substrate [31]. If we consider all the cases, which have been studied thus far, however, the measured WF values of 1 ML of C60 on dierent metal substrates cover a wide range. As seen in Table 1 the WF values of C60 -covered metal surfaces vary from 4.82 to 5.61 eV. Based on this observation, the deviations of the measured values from 5 eV are large and cannot be considered as an error. Probably, a redistribution of the charge between C60 and the metal substrate re¯ects a more complex binding between them. This is responsible for the electronic behavior and thus the WF of the C60 overlayer in contact to the metal substrate. The question which arises from our measurements is why after the deposition of a C60 monolayer on Ni(1 1 0) surface the WF increases from 5.04 to 5.61 eV and does not remain near 5 eV which has been assumed to be the value of C60 covered metal surfaces. According to Table 1 the WF of C60 /metals, increases grossly for substrates 30 V. Saltas, C.A. Papageorgopoulos / Surface Science 488 (2001) 23±31 Table 1 WFs of clean metallic substrates and after the adsorption of 1 ML C60 Substrate Us of clean substrate (eV) UC60 of 1 ML C60 on metals DU (eV) Al(1 1 1) Al(1 1 0) Ta(1 1 0) Ag(1 1 0) Ni(1 1 0) Cu(1 1 1) Ni(1 1 1) Rh(1 1 1) Au(1 1 0) 4.25 0.05 4.35 0.05 4.80 4.52 5.04 4.94 5.36 5.40 5.37 5.15 0.05 5.25 0.05 5.4 4.9 5.61 4.86 4.93 4.95 4.82 0.05 0.95 0.07 0.95 0.07 0.6 0.38 0.57 0.08 0.43 0.45 0.45 0.05 The values have been taken from Refs. [4,6,26,28,37] and present work. with low WF, whereas, for substrates with high values Us > 5 eV, the WF changes are negative. In the last cases the CT should be rather limited and the WF values tend to approach the WF value of bulk C60 , 4.7 eV. It is possible that, besides the WF of the substrate, the nature of binding between C60 molecules and the metal substrate plays some role to the CT. 4. Conclusions In this paper, we study the adsorption and desorption process of C60 on Ni(1 1 0) surfaces. The investigation took place in UHV with the use of LEED, AES, TDS and WF measurements. According to the LEED observations, deposited C60 at 650 K forms initially islands with 5 3 structure, which at the completion of one physical ML changes to a hcp structure, in agreement with reported results. When C60 is deposited at RT it does not form any ordered structures, while the sticking coecient is nearly the same as at 650 K. Heating of 1ML C60 -covered Ni(1 1 0) surface at 750 K, causes a partial fragmentation of C60 molecules to a 2D graphite-like layer, while the remained C60 molecules are rearranged to the 5 3 structure. With increasing temperature to 800 K, the fragmentation of all C60 has been completed. Part of the fragments has been desorbed as large molecules and the remained fragments participate the 2D graphite-like layer, which appears at two dif- ferent orientations. With further heating, C is desorbed from the graphite-like layer bound directly to the surface in molecular and/or atomic state. There is no indication of atomic carbon on the surface below 750 K. Our results suggest that the decomposition/desorption mechanism is quite different than that reported by Cepek et al. The WF value at saturation coverage was found to be 5.61 eV, for both deposition at RT and 650 K. The fact that 1 ML of C60 on Ni(1 1 0) increases the WF to 5.61 eV, suggests that the WF of a C60 overlayer on dierent metal substrates is in¯uenced to some extend by the WF of the latter. References [1] W. Kratschmer, L.D. Lamb, K. Fostiropoulos, D.R. Human, Nature 347 (1990) 354. [2] T.R. Ohno, Y. Chen, S.E. Harvey, G.H. Kroll, J.H. Weaver, R.E. Hau¯er, R. Smalley, Phys. Rev. B 44 (1991) 13747. [3] S. Modesti, S. Cerasari, P. Rudolf, Phys. Rev. Lett. 71 (1993) 2469. [4] M.W. Ruckman, B. Xia, S.L. Qiu, Phys. Rev. B 48 (1993) 15457. [5] E.I. Altman, R.J. Colton, Surf. Sci. 295 (1993) 13. [6] A. Sellidj, B.E. Koel, J. Phys. Chem. 97 (1993) 10076. [7] M.K.-J. Johansson, A.J. Maxwell, S.M. Gray, P.A. Bruhwiler, D.C. Mancini, L.S.O. Johansson, N. Martensson, Phys. Rev. B 54 (1996) 13472. [8] D. Fujita, T. Yakabe, H. Nejoh, T. Sato, M. Iwatsuki, Surf. Sci. 366 (1996) 93. [9] S. Modesti, J.K. Gimzewski, R.R. Schlittler, Surf. Sci. 331± 333 (1995) 1129. [10] J.E. Rowe, P. Rudolf, L.H. Tjeng, R.A. Malic, G. Meigs, C.T. Chen, J. Chen, E.W. Plummer, Int. J. Mod. Phys. 6 (1992) 3909. [11] J.K. Gimzewski, S. Modesti, R.R. Schlittler, Phys. Rev. Lett. 72 (1994) 1036. [12] P.W. Murray, M.é. Pedersen, E. Lgsgaard, I. Stensgaard, F. Beseubacher, Phys. Rev. B 55 (1997) 9360. [13] P. Rudolf, in: J. Fink, M. Mehring, S. Roth (Eds.), Fullerenes and Fullerene Nanostructures, World Scienti®c, Singapore, 1996. [14] A.J. Maxwell, P.A. Br uhwiler, S. Andersson, D. Arvanitis, B. Hernnas, O. Karis, D.C. Mancini, N. M artensson, S.M. Gray, M.K.-J. Johansson, L.S. Hohansson, Phys. Rev. B 52 (1995) R5546. [15] T. Hashizume, K. Motai, X.D. Wang, H. Shinohara, Y. Saito, Y. Maruyama, K. Ohno, Y. Kawazoe, Y. Nishina, H.W. Pickering, Y. Kuk, T. Sakurai, Phys. Rev. Lett. 71 (1993) 2959. V. Saltas, C.A. Papageorgopoulos / Surface Science 488 (2001) 23±31 [16] H. Kroto, J.E. Fisher, D. Cox (Eds.), The Fullerenes, Pergamon, Oxford, 1993. [17] A.F. Hebard, M.J. Rosseinsky, R.C. Haddon, D.W. Murphy, S.H. Glarum, T.T.M. Palstra, A.P. Ramirez, A.R. Kortan, Nature 350 (1991) 600. [18] A.F. Hebard, Physics Today (November) (1992) 26. [19] P.J. Benning, J.L. Martins, J.H. Weaver, L.P.F. Chibante, R.E. Smalley, Science 252 (1991) 1417. [20] M. Pedio, M.L. Grilli, C. Ottaviani, M. Capozi, C. Quaresima, P. Perfetti, P.A. Thiry, R. Caudano, P. Rudolf, J. Elect. Spec. Rel. Phenom. 76 (1995) 405. [21] A. Goldoni, G. Paolucci, Surf. Sci. 437 (1999) 353. [22] A.J. Maxwell, P.A. Br uhwiler, A. Nilson, N. M artensson, P. Rudolf, Phys. Rev. B 49 (1994) 10717. [23] C. Cepek, A. Goldoni, S. Modesti, Phys. Rev. B 53 (1996) 7466. [24] M.R.C. Hunt, P. Rudolf, S. Modesti, Phys. Rev. B 55 (1997) 7889. [25] A.J. Maxwell, P.A. Br uhwiler, S. Andersson, N. M artensson, P. Rudolf, Chem. Phys. Lett. 247 (1995) 257. [26] L.Q. Jiang, B.E. Koel, Phys. Rev. Lett. 72 (1994) 140. [27] L.Q. Jiang, B.E. Koel, Chem. Phys. Lett. 223 (1994) 69. 31 [28] A.J. Maxwell, P.A. Br uhwiler, D. Arvanitis, J. Hasselstr om, M.K-J. Hohansson, N. M artensson, Phys. Rev. B 57 (1998) 7312. [29] M.R.C. Hunt, S. Modesti, P. Rudolf, R.E. Palmer, Phys. Rev. B 51 (1995) 10039. [30] M. Pedio, K. Hevesi, N. Zema, M. Capozi, P. Perfetti, R. Gouttebaron, J.-J. Pireaux, R. Caudano, P. Rudolf, Surf. Sci. 437 (1999) 249. [31] K.D. Tsuei, J.Y. Yuh, C.T. Tzeng, R.Y. Chu, S.C. Chung, K.L. Tsang, Phys. Rev. B 56 (1997) 15412. [32] E.Y. Zandberg, A.Y. Tontegode, F.K. Yusifov, Zhur. Tekh. Fiz. 41 (1971) 2420. [33] F.C. Schouten, E.W. Kaleveid, G.A. Bootsma, Surf. Sci. 63 (1977) 460. [34] E.G. Seebauer, Surf. Sci. 316 (1994) 391. [35] B.G. Baker, B.B. Johnson, G.L.C. Maire, Surf. Sci. 24 (1971) 572. [36] G. Gensterblum, J.-J. Pireaux, P.A. Thiry, R. Caudano, T. Buslaps, R.L. Johnson, G.L. Lay, V. Aristov, R. G unther, A. Taleb-Ibrahimi, G. Indlekofer, Y. Petro, Phys. Rev. B 48 (1993) 14756. [37] D. Purdie, H. Bernho, B. Reihl, Surf. Sci. 364 (1996) 279.
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