영어강의 교재(2010-1학기)
: 나노반도체공정 (SF1012-01)
정보나노소재공학
양비룡
Chapter 1. Course Introduction
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
Semiconductor Devices
• In ch1, we cover the following topics;
- Classification of semic. Devices
- History of semic. Devices
- History of semic. Process technologies
- The trends of Semic. Technologies:
high-density, high-speed, low-power consumption, and nonvolatility
• Foundation of the electronic industry with the largest market
- global sales over 1 trillion dollars since 1998, as Fig. 1
• Information Age based on electronic technology
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
10%
25%
Figure 1.1. Gross world product (GWP) and sales volumes of the
electronics, automobile, semiconductor, and steel industries from 1980 to
2000 and projected to 2010.1,2
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
History of Semiconductor
• History over 125 yrs
- 60 major devices and over 100 device variations
- All these are included in 4 types as Fig. 2
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
• the first semic. In 1874
• rectifying or ohmic contact: MESFET
- microwave device
• Heterojunction btwn two dissimilar semic.
- ex> btwn GaAs and AlAs
- Key components for high-speed and photonic devices
• Key block for most semic.
- foundation of the physics of semic. devices
• p-n-p bipolar Tr in 1947
- unprecedent impact on electronic industry
- p-n-p-n : thyristor
• MOS structure
- combination of metal / oxide + oxide / Semic.
- MOSFET: MOS as gate + two p-n junction as s & d
- most important for advanced integrated circuits
- >10,000 devices per integrated circuit chip
Figure 1.2. Basic device building blocks. (a) Metal-semiconductor
interface; (b) p-n junction; (c) heterojunction interface; and (d) metal-oxidesemiconductor structure.
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
History of Major Semiconductor Devices
-resistance contact btw metal & Cu pyrite depend on magn
and polarity of V
- electroluminescence phenomenon;
yellowish light from carborundom crystal with 10V for two points
- Fig. 3
- using Si p-n junction
- one of the fastest semic.
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
History of Major Semiconductor Devices
-key for advanced integrated circuit: fig. 4
- in semiconductor
- basis for modern laser diodes: DVD, optical-fiber communication,
laser printing, atmospheric-pollution monitoring
- microwave devices: detection system, remote control, microwave
test
- highest continuous power at m.w. freq: radar system, alarm system
- fig 5a; flash memory
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
The First Transistor
- key semic. device
Quartz
• Ge used as semic.
• one gold-forward bias
- pos. V to third terminal
- another-reverse biased
• Found Tr. Action
- input signal amplified
Two point contact of Au
by ~50 um
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
The First Metal-Oxide-Semiconductor
Field-Effect Transistor (MOSFET)
Using thermally oxidizing Si substrate
- gate length 20 um, gate oxide thick 100 nm
• First Si/SiO2 until today
• channel length 30nm recently
• 90% of semic. Market
• basis for advanced integrated
circuit
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
• Charge storage
when switched off
- portable electronic
systems
• gate length: 10nm
- store single electron in
floating gate
- over one trillion bits
Figure 1.5. (a) A schematic diagram of the first nonvolatile semiconductor
memory (NVSM) with a floating gate.21 (b) A limiting case of the floatinggate NVSM—the single-electron memory cell.22
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
History of Key Semiconductor
Technologies
- Si wafer process
- GaAs growth
- note Compound Semiconductor
- Impurity at high T, deep junction; Idea in a patent
- ancient lithography using PR; key tech
; industry continuous growth from improvement
; over 35% for fabrication cost of integrated circuit
- prevent impurity from diffusing
- important device performance and novel device
on arrangement
- precise control of dopant atoms at low T, shallowjunction
- 1bipolar Tr.+ 3 resistors+ 1 capacitor in Ge
connected wire bonding –hybrid circuit
- single stone; connected by Al metallization; fig 6
-Oxide layer; impurity atoms
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
The First Monolithic Integrated Circuit
- the basis for microelectronics industry
- 6 devices
- Al interconnection line by etching
evaporated Al layer over oxide surface
using lithography technique
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
History of Key Semiconductor
Technologies
- reduced power consumption; very little current
dominant for advanced IC
-1 MOSFET (switch) + 1 capacitor (data storage)
volatile, high power, applicable for nonportable systems
- improve device liability; reduce parasitic capacitance
- important epitaxial for compound semic. Such as GaAs
- using CF4-O2 gas mixture to etch Si wafer
- perfect vertical control of composition and doping in atomic
level ; photonic & quantum-effect devices
- fig 7
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
The First Microprocessor
• 4 bits Intel 4004 in 1971
• 3x4 mm2
• 2300 MOSFETs
• fab by p-channel, poly-Si gate
using 8um design rule
• performance; as $300,000 IBM
computers of early 1960s (desk
size CPU) – major breakthrough
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
Technology Trends
ex> portable systems-Cellular phone, PDA, notebook, D. camera
•
MFL-smallest line width: reduced at a rate of 13% per yr.
- ~50nm in 2010
•
Device miniaturization: reduced unit cost per circuit function
- cost per bit has halved every 2 years for DRAM
- switching time : speed  - improve by 104 since 1959
 expanded IC functional throughput rates: at the rate of terabit-per-second
- consume less power: energy dissipation per logic gate has decreased by
over 106 times since 1959
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
Figure 1.8.
Exponential increase of
dynamic random access
memory density versus year
based on the Semiconductor
Industry Association (SIA)
roadmap.49
expectation
• Density increase factor of 2 every 18 months
- expectation
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
• increase by a factor of 2 every 18 months
• current Pentium-based PC: same as CRAY1 of the late 1960s
• size 3 orders of magnitude smaller
Computational
Billion instruction per second
Figure 1.9. Exponential increase of microprocessor computational power
versus year.
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
Figure 1.10.
Growth curves for different
technology drivers.50
• bipolar transistor
• DRAM & microprocessor based on MOS devices
- rapid growth of PC & electronic systems
• non-volatile semiconductor memory
- rapid growth of portable systems
What ?
Bipolar Tr. DRAM & MP based NVSM-portable
Tech driver
Tech driver on MOS devices
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
Summary
•
Semic. has enormous impact on global economy even though new era of
study, compared to steel, which was first studied in 1200 BC (over 3000 yrs ago)
- semic device & materials studied since the early 19th century (1874 metalsemic. contact ) –>Fig.1
•
Historical review of devices
- First semic. in 1874 m-s contact to 20nm MOSFET in 2001
- bipolar tr. In 1947, which ushered in the moder electronic era
- MOSFET in 1960, which is the most important for IC
- non-volatile semic. Memory in 1967, which has been the technology drivers
since 1990
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.
Summary
•
Historical review of major technologies
- lithography photoresist in 1957, basic pattern-transfer process
- invention of IC in 1959, opening the rapid growth of microelectronic industry
- DRAM in 1967 & Microprocessor in 1971: largest segments of s. industry
Semiconductor Devices, 2/E by S. M. Sze
Copyright © 2002 John Wiley & Sons. Inc. All rights reserved.