Dr. Moonkyung Kim
Research Associate, School of Electrical and
Computer Engineering
Cornell University
Contact Details
Organization Name:
Cornell University
Address:
School
of
Electrical and Computer
Engineering
315 Phillips Hall, Cornell
University
Town: ITHACA
State: NY
Country: USA
Zip code: 14853
Phone: (607) 592-2940
(607) 255-5323
Fax: (607) 255-3508
Email:
[email protected]
Website:
http://electroscience.ece.c
ornell.edu/
http://people.ece.cornell.e
du/~mkk23/Site_2/Resear
ch.html
Dr. Moonkyung Kim is currently Research Associate in the school
of Electrical and Computer Engineering at Cornell University
beginning his appointment in 2008. He received B.S. and M.S. of
Electrical Engineering from Hanyang University at Seoul in 1997.
He received his M.S. and Ph.D. degrees, entitled, “NANOSCALE
SILICON-OXIDE-NITRIDE-OXIDE-SILICON
(SONOS)
MEMORIES AND OTHER CHARGE TRAPPING DEVICES” in
the department of Electrical and Computer Engineering at Cornell
Univ. in 2007.
He started his work at SAIT (Samsung Advanced Institute of
Technology) as a research scientist in 1997. He was engaged in
development of single electron transistors, 4 Gbit SONOS memory
and 16 Gbit single electron charging MONOS memory at Samsung
from 1997 to 2004. He is an author/co-author of ~15 U.S. patents
and ~ 40 journal/conference papers. He has been awarded for his
innovative researches and the patents of creative inventions from
SAMSUNG in 1999 and 2000. He was selected to be a visiting
scientist at Cornell University for the development of nanoscale
nonvolatile memories from 2001 to 2003, and he implemented the
smallest SONOS memory having the size of 32 nm gate length in
2003. His work has led to a demonstration of 30 nm level
nonvolatile memories by SAMSUNG recently. After receiving
Ph.D. degree, he completed postdoctoral work in 2008 at Cornell
University where his work included a device design, nanofabrication, nanoscale silicon MOSFETs & nonvolatile memories
and electro-mechanical switching devices. He is interested in
Nanoscale electronics, Flash memories, process development of
nanoscale devices and nano electro-mechanical systems (NEMS).
His current research topics are:
ƒ Electro mechanical switching devices using nano-beam and
nano-spheres
ƒ Charge trapping devices: focus on electrons trap/detrap
phenomena in novel structures
ƒ Novel phase transition devices (including the investigation of
various transition materials)
ƒ Self-Assembled devices
ƒ Development of nanoscale patterning using E-beam, AFM
and polymers