3rd KOREA-US NanoForum
April 3 - April 4, 2006, Tower Hotel
Key Issues of the UV-Nanoimprint Equipment
for sub-50nm Half-pitch Patterns
Korea Institute of Machinery & Materials
Nano-Systems Research Center
JaeJong Lee
[email protected]
한국기계연구원
Korea Institute of Machinery & Materials
3rd KOREA-US NanoForum
Outlook
„ Introduction
„ Key Issues
z Uniform Contact Imprinting Mechanism
z Overlay & Alignment System
z Stamp Fabrication
z Anti-Vibration System
z UV-NIL Tools ANT-4
z Experimental Results
„ Conclusions
한국기계연구원
Korea Institute of Machinery & Materials
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3rd KOREA-US NanoForum
Uniform Contact Imprinting Mechanism
z
Mask
∆θ
Wafer
Center of Rotation
A
Wafer Chuck
Wedged
Mask
Offset
x
O
Substrate
(a) Initial state
z′
∆x
A
A′
Imprinting Errors
(Wedged Pattern)
Thin and Uniform
∆z
Mask
O′
x′
(b) Final state
Resist (Transfer Layer)
Wafer
Surface Non-Uniformity
한국기계연구원
Korea Institute of Machinery & Materials
3rd KOREA-US NanoForum
Modal Analysis : Planar Motion Mechanism
Nanopositioning Mechanism
Rotation: 760 Hz
Translation: 834 Hz
3 DOF : 2 Translation and 1 Rotation
Manufactured Planar Motion
Mechanism for Nanopositioning
한국기계연구원
Korea Institute of Machinery & Materials
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3rd KOREA-US NanoForum
1st Alignment : Moire Fringe Analysis (1)
™ Remove Background image (or Noise) to enhance
the Contrast of Móire fringe
™ Remove Concentric
Circular Grating Image
™ Raw Image
™ Subtraction Reference Image (Mask Image)
from Raw one
™ Móire fringe extraction &
Calculation of fringe center and boundary
한국기계연구원
Korea Institute of Machinery & Materials
3rd KOREA-US NanoForum
2nd Fine Alignment : Dual Grating
Incident Beam
-1 order
Diffracted Beam
+1 order
Diffracted Beam
V
Sum. Signal of +1, -1 Beam
Stamp
Resin
Prior Layer
X
Wafer
Diff. Signal of +1, -1 Beam
Alignment Mark
X
Alignment Position
Fine Alignment : within One Period of Grating
한국기계연구원
Korea Institute of Machinery & Materials
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3rd KOREA-US NanoForum
Aligning Signal by Dual Grating
Gap : ~45um
Difference (ΛI)
0.6
0.2
0.4
0.2
6um(1 period of grating)
0.1
Voltage(V)
Voltage(V)
0.0
-0.2
-0.4
-0.6
Aligning Position
0.0
-0.1
50nm
-0.8
-0.2
4.50
-1.0
CH2(-1)
CH1(+1)
4.55
-1.2
4.60
4.65
4.70
4.75
4.8
Displacement(um)
0
2
4
6
8
10
12
14
16
18
20
Displacement(um)
Fine Alignment(0°)
180°Position
Fine Alignment(360°)
Estimated Aligning Accuracy
: < 50nm
Stamp Grating(Movable)
Wafer Grating(Fixed)
한국기계연구원
Korea Institute of Machinery & Materials
3rd KOREA-US NanoForum
Quartz Stamp Fabrication for UV-NIL (2)
Resolution & Chemical stability
10 nm
HSQ
Pirana solution test
Amorphous Si
ITO
: H2SO4:H2O2 4:1
E-beam litho.
: 10 min dipping
Quartz
After Pirana solution test ,
20 nm line array
40 nm line array
Device
application
한국기계연구원
Korea Institute of Machinery & Materials
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3rd KOREA-US NanoForum
UV-NIL Tools with Multi-Head Imprinting Unit
„ Imprinting Conditions
z Wafer : 4 inch
z Imprinting Pressure ≤ 2bar
z Single Layer / Single Step
„ Imprinting Head
z Chip-size Multi-Head Type
z Multiple Chucking System
z Variable Pressure Type
„ XYZ Stage
z Stroke : 120 x 250 x 25mm
z Z Sliding Unit
50nm UV-NIL : ANT-4
Sub-50nm UV-NIL : ANT-6
„ UV System
z ≥ 50mw/cm2
z Power supply : 2Kw
„ Anti Vibration System
„ Controller : UMAC-2
한국기계연구원
Korea Institute of Machinery & Materials
3rd KOREA-US NanoForum
Experimental Results using ANT-4 (1)
86nm Lines
75nm Dots
70nm Lines
77nm Dots
100nm Lines
150nm Squares
한국기계연구원
Korea Institute of Machinery & Materials
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3rd KOREA-US NanoForum
Experimental Results using ANT-4 (2)
55nm Dots
55nm Dots
50nm
Stamp
NIPNIP-K40
Spin coat
53nm Dots
60nm Dots
한국기계연구원
Korea Institute of Machinery & Materials
3rd KOREA-US NanoForum
Experimental Results using ANT-4 (3)
130nm Chess
110nm Chess & Square
130nm Squares
130nm Squares
한국기계연구원
Korea Institute of Machinery & Materials
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3rd KOREA-US NanoForum
Experimental Results using ANT-4 (4)
150nm Dots
155nm Dots
150nm Squares
Bragg Grating Pattern
250m
한국기계연구원
Korea Institute of Machinery & Materials
3rd KOREA-US NanoForum
Thanks for
your attention!
한국기계연구원
Korea Institute of Machinery & Materials
7