High-Throughput Nanomanufacturing using EUV Lithography

September 29, 2014
Integrated Device
25 nm
15nm
22n-tech TR.
100nm
Influenza virus
Lithography Technology
Lithography - Core Technology
for Device Shrinking & Integration
Resolution Limit depends on wavelength
Light Source for Lithography
Extreme UV (EUV) Lithography
 : 193nm → 13.5 nm
EUV Stepper and EUV Mask
Element Technology & Issues
Our Work : EUV Phase Shift Mask
Gen. 1: Binary Mask
R2 ~0
Gen. 2: Phase Shift Mask
R1
Our Work : New EUV Microscope
Coherent Scattering Microscope: Lensless Computational Microscope
Field Spectrum
Objective lens
Ordinary microscope
Incoherent
Source
CSM
Aerial image
NA
Condenser Reticle
Coherent
Source
Computer
Aerial
image
NA
10
Our Original CSM
Collaboration with domestics partners
11
Mask Inspection with CSM
Coherent Scattering Microscopy
Phase map
Magnitude map
Inspection of fabricated EUV masks; binary intensity mask (BIM) and phase shift mask (PSM)
Phase profile
Thank you
for your attention