Nano Res.
Electronic Supplementary Material
Functional nanogenerators as vibration sensors
enhanced by piezotronic effects
Zheng Zhang1,§, Qingliang Liao1,§, Xiaoqin Yan1, Zhong Lin Wang2,3, Wenduo Wang1, Xu Sun1, Pei Lin1,
Yunhua Huang1, and Yue Zhang1,4 ()
1
State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and
Technology Beijing, Beijing 100083, China
2
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
3
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
4
Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China
§
These two authors contributed equally to this work.
Supporting information to DOI 10.1007/s12274-013-0386-7
Figure S1 The synthesis process for ZnO-NWA which includes seed-layer preparation processes (1–3), and solution reaction processes
(4–6). In order to increase the aspect ratio, the solution reaction process (4–6) was repeated several times. In (e), the as-prepared substrate
was cleaned with deionized water to wipe off the impunities on the NWA.
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Nano Res.
Figure S2 Side-view morphology of the ZnO NWAs in a series of comparative experiments. The length of ZnO nanowires without
PEI (a) is 2–3 µm. ZnO NWAs synthesized with the addition of PEI (b) once, (c) twice or, (d) three times. The average length of nanowires
is about 6 µm, 8 µm, and 10 µm, respectively, showing a significant increase with repeated growth.
Figure S3 I–V curves of FTO/ZnO/FTO. The insert presents the structure of the test sample. It can be concluded that the contact between
FTO and ZnO is an ohmic contact.
Figure S4 I–V curves under different compressive strain. At forward bias, the I–V curves shift upward with increasing compressive strain.
This phenomenon is attributed to not only the change in barrier height induced by the piezopotential, but also the piezoresistance effect
caused by the deformation of the nanowire arrays.
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