Nano Res.
Electronic Supplementary Material
Enhanced performance of GaN nanobelt-based
photodetectors by means of piezotronic effects
Ruomeng Yu1,§, Caofeng Pan2,§, Youfan Hu1, Lin Li3, Hongfei Liu4, Wei Liu5, Soojin Chua4, Dongzhi Chi4,
and Zhong Lin Wang1,2 ()
1
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0245, USA
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China
3
School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA
4
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602, Singapore
5
School of Electrical and Electronic Engineering, Luminous! Center of Excellence for Semiconductor Lighting and Display, Nanyang
Technology University, Singapore 639798, Singapore
§
These authors contributed equally to this work.
2
Supporting information to DOI 10.1007/s12274-013-0354-2
Figure S1 Reproducibility and stability of GaN NB-based PDs.
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