TLP3061(S),TLP3062(S),TLP3063(S)
TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC
TLP3061(S),TLP3062(S),TLP3063(S)
Unit: mm
OFFICE MACHINE
HOUSEHOLD USE EQUIPMENT
TRIAC DRIVER
SOLID STATE RELAY
The TOSHIBA TLP3061 (S), TLP3062 (S), TLP3063 (S) consist of a zero
voltage crossing turn-on photo-triac optically coupled to a gallium
arsenide infrared emitting diode in a six lead plastic DIP package.
•
Peak Off-State Voltage
: 600 V (min)
•
Trigger LED Current
: 15 mA (max) (TLP3061(S))
10 mA (max) (TLP3062(S))
5 mA (max) (TLP3063(S))
•
On-State Current
: 100 mA (max)
•
Isolation Voltage
: 5000 Vrms (min)
•
UL Recognized
: UL1577, File No. E67349
•
SEMKO Approved
: SS EN60065
•
BSI Approved
: BS EN60065, File No.8385
•
Option (D4) type
SS EN60950, File No.9841113
JEDEC
EIAJ
TOSHIBA
weight: 0.39g
―
―
11-7A9
BS EN60950, File No.8386
Pin Configuration
(top view)
VDE approved: DIN EN60747-5-2
Approved No. 40009302
Highest permissible over voltage: 8000VPK
2
(Note):When a EN60747-5-2 approved type is needed,
please designate the "Option (D4)"
•
3
Construction mechanical rating
Creepage Distance
Clearance
Insulation Thickness
7.62 mm pich
Standard Type
10.16 mm pich
TLPxxxxF type
7.0 mm (Min)
7.0 mm (Min)
0.5 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.5 mm (Min)
6
1
Maximum operating insulation voltage: 890VPK
ZC
4
1: Anode
2: Cathode
3: N.C.
4:Terminal 1
6:Terminal 2
ZC:Zero-cross Circuit
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2004-09-13
TLP3061(S),TLP3062(S),TLP3063(S)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
∆IF / °C
−0.7
mA / °C
Peak forward current
(100 µs pulse, 100 pps)
IFP
1
A
Power dissipation
PD
100
mW
∆PD / °C
−1.0
mW / °C
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
600
V
Forward current
LED
Forward current derating (Ta ≥ 53°C)
Power dissipation derating (Ta ≥ 25°C)
Off−state output terminal voltage
On−state RMS current
VDRM
Ta = 25°C
IT(RMS)
Ta = 70°C
−1.1
mA / °C
ITP
2
A
ITSM
1.2
A
PD
300
mW
∆PD / °C
−4.0
mW / °C
Peak on−state current
(100µs pulse, 120 pps)
Peak nonrepetitive surge
current (Pw = 10 ms, DC = 10%)
Power dissipation
Power dissipation derating (Ta ≥ 25°C)
mA
50
∆IT / °C
On−state current derating (Ta ≥ 25°C)
Detector
100
Tj
115
°C
Storage temperature range
Junction temperature
Tstg
−55~150
°C
Operating temperature range
Topr
−40~100
°C
Lead soldering temperature (10 s)
Tsol
260
°C
Total package power dissipation
PT
330
mW
∆PT / °C
−4.4
mW / °C
BVS
5000
Vrms
Total package power dissipation derating
(Ta ≥ 25°C)
Isolation voltage
(AC, 1 min., R.H.≤ 60%)
(Note 1)
(Note 1)
Device considered a two terminal device: Pins 1, 2 and 3
shorted together and pins 4 and 6 shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VAC
―
―
240
Vac
Forward current
IF*
15
20
25
mA
Peak on−state current
ITP
―
―
1
A
Operating temperature
Topr
−25
―
85
°C
※ In the case of TLP3062
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2004-09-13
TLP3061(S),TLP3062(S),TLP3063(S)
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5 V
―
―
10
µA
Capacitance
CT
V = 0, f = 1 MHz
―
10
―
pF
Peak off−state current
IDRM
VDRM = 600 V
―
10
1000
nA
Peak on−state voltage
VTM
ITM = 100 mA
―
1.7
3.0
V
―
0.6
―
mA
200
500
―
V / µs
―
0.2
―
V / µs
Min.
Typ.
Max.
Unit
―
―
15
―
5
10
―
―
5
Holding current
IH
―
Critical rate of rise of
off−state voltage
dv / dt
Vin = 240 Vrms, Ta = 85°C
Critical rate of rise of
commutating voltage
dv / dt (c)
Vin = 60 Vrms, IT = 15mA
(Fig.1)
(Fig.1)
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
TLP3061(S)
Trigger LED current
IFT
TLP3062(S)
VT = 6 V
TLP3063(S)
mA
Inhibit voltage
VIH
IF = rated IFT
―
―
50
V
Leakage in inhibited state
IIH
IF = rated IFT
VT = rated VDRM
―
100
300
µA
Capacitance input to output
CS
VS = 0, f = 1 MHz
―
0.8
―
pF
10
―
Ω
5000
―
―
AC, 1 second, in oil
―
10000
―
DC, 1 minute, in oil
―
10000
―
Isolation resistance
RS
VS = 500 V (R.H.≤ 60%)
AC, 1 minute
Isolation voltage
Fig. 1
BVS
10
5×10
14
Vrms
Vdc
dv / dt test circuit
+
VCC
Rin
120Ω
−
1
2
3
4
＋5V,VCC
Vin
6
RL
0V
～
dv / dt（c）
4kΩ
3
dv / dt
2004-09-13
TLP3061(S),TLP3062(S),TLP3063(S)
I F – Ta
60
100
R.M.S. on-state current
IT(RMS) (mA)
Allowable forward current
IF (mA)
50
40
30
20
10
0
－20
IT(RMS) – Ta
120
0
20
40
60
80
100
80
60
40
20
0
－20
120
0
Ambient temperature Ta (℃)
Allowable pulse forward current
IFP (mA)
IF (mA)
50
500
Forward current
300
100
50
30
10
3
10－3
10－2
3
10－1
3
Ta＝25℃
5
3
1
0.5
0.3
0.6
0.8
(mA)
Pulse forward current IFP
Forward voltage temperature
coefficient ΔVF / ΔTa (mV / ℃)
－2.0
－1.6
－1.2
－0.8
1
3
5
1.0
1.2
1.4
1.6
1.8
2.6
3.0
IFP – VFP
1000
－2.4
0.5
120
Forward voltage VF（V)
ΔVF / ΔTa – IF
0.3
100
10
0.1
100
3
－2.8
－0.4
0.1
80
30
Duty cycle ration DR
－3.2
60
IF – VF
100
Pulse width≦100µs
Ta＝25℃
1000
40
Ambient temperature Ta (℃)
IFP – DR
3000
20
10
30
500
300
100
50
30
10
Pulse width≦10µs
5
Rrpetitive frequency
3
=100Hz
Ta=25℃
1
0.6
50
1.0
1.4
1.8
2.2
Pulse forward voltage VFP (V)
Forward current IF (mA)
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2004-09-13
TLP3061(S),TLP3062(S),TLP3063(S)
Normalized IFT － Ta
Normalized IH － Ta
3
3
2
1.2
1
1.2
1
Holding current IH
（Arbitrary unit）
Trigger LED current IFT
（Arbitrary unit）
VT=3V
2
0.5
0.3
0.1
－40
0
－20
20
40
60
80
0.5
0.3
0.1
－40
100
－20
Normalized IDRM － Ta
103
0
20
40
60
80
100
80
100
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
Normalized VDRM － Ta
1.4
10
Off-state output terminal voltage
V DRM（Arbitrary unit）
Peak off-state current IDRM
（Arbitrary unit）
VDRM=Rated
2
101
10
0
0
20
40
60
1.0
0.8
0.6
0.4
0.2
－40
100
80
1.2
－20
Normalized VIH － Ta
20
40
60
Normalized IIH － Ta
3
3
2
2
1.2
1
1.2
1
Inhibit Current IIH
（Arbitrary unit）
Inhibit voltage VIH
（Arbitrary unit）
0
Ambient temperature Ta (℃)
Ambient temperature Ta (℃)
0.5
0.3
0.5
0.3
IF ＝ Rated IFT
VT ＝ Rated VDRM
IF ＝ Rated IFT
0.1
－40
－20
0
20
40
60
80
0.1
－40
100
Ambient temperature Ta (℃)
－20
0
20
40
60
80
100
Ambient temperature Ta (℃)
5
2004-09-13
TLP3061(S),TLP3062(S),TLP3063(S)
RESTRICTIONS ON PRODUCT USE
030619EBC
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
6
2004-09-13