FDD4685
40V P-Channel PowerTrench® MOSFET
–40V, –32A, 27mΩ
Features
tm
General Description
„ Max rDS(on) = 27mΩ at VGS = –10V, ID = –8.4A
This P-Channel MOSFET has been produced using Fairchild
Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and good switching characteristic offering
superior performance in application.
„ Max rDS(on) = 35mΩ at VGS = –4.5V, ID = –7A
„ High performance trench technology for extremely low rDS(on)
„ RoHS Compliant
Application
„ Inverter
„ Power Supplies
S
D
G
S
G
D
-PA
K
TO
-2 52
(TO -252)
D
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous(Package Limited)
ID
TC= 25°C
V
TC= 25°C
(Note 1)
–40
-Continuous
TA= 25°C
(Note 1a)
–8.4
A
–100
(Note 3)
Power Dissipation
TC= 25°C
Power Dissipation
TJ, TSTG
±20
–32
-Pulsed
PD
Units
V
-Continuous(Silicon Limited)
Drain-Source Avalanche Energy
EAS
Ratings
–40
121
69
(Note 1a)
Operating and Storage Junction Temperature Range
3
–55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
1.8
(Note 1a)
40
°C/W
Package Marking and Ordering Information
Device Marking
FDD4685
©2006 Fairchild Semiconductor Corporation
FDD4685 Rev.B
Device
FDD4685
Package
D-PAK(TO-252)
1
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
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FDD4685 40V P-Channel PowerTrench® MOSFET
October 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = –250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
–40
V
ID = –250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = –32V, VGS = 0V
–1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VGS = 0V
±100
nA
–3
V
mV/°C
–33
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = –250µA, referenced to 25°C
4.9
VGS = –10V, ID = –8.4A
23
27
rDS(on)
Static Drain to Source On Resistance
VGS = –4.5V, ID = –7A
30
35
VGS = –10V, ID = –8.4A, TJ=125°C
33
42
VDS = –5V, ID = –8.4A
23
gFS
Forward Transconductance
–1
–1.6
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = –20V, VGS = 0V,
f = 1MHz
1790
2380
pF
260
345
pF
140
205
pF
Ω
f = 1MHz
4
VDD = –20V, ID = –8.4A
VGS = –10V, RGEN = 6Ω
8
16
ns
15
27
ns
34
55
ns
14
26
ns
19
27
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD =–20V, ID = –8.4A
VGS = –5V
5.6
nC
6.1
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = –8.4A
(Note 2)
IF = –8.4A, di/dt = 100A/µs
–0.85
–1.2
V
30
45
ns
31
47
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper
b. 96°C/W when mounted on a minimum pad.
2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 9A, VDD = 40V, VGS = 10V.
FDD4685 Rev.B
2
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FDD4685 40V P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
80
-ID, DRAIN CURRENT (A)
3.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
100
VGS = -6V
VGS = -10V
60
VGS = -4.5V
VGS = -4V
40
20
0
0
VGS = -3V
1
2
3
-VDS, DRAIN TO SOURCE VOLTAGE (V)
4
VGS = -4.5V
1.8
VGS = -6V
1.4
0.6
1.2
1.0
0.8
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
-IS, REVERSE DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
TJ = 25oC
TJ = 150oC
TJ = -55oC
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
6
Figure 5. Transfer Characteristics
FDD4685 Rev.B
100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
50
TJ = 125oC
40
30
TJ = 25oC
2
3
4
5
6
7
8
9
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
60
0
80
60
20
150
100
20
20
40
60
-ID, DRAIN CURRENT(A)
ID = -8.4A
Figure 3. Normalized On Resistance
vs Junction Temperature
80
0
70
ID =-8.4A
VGS = -10V
1.4
0.6
-50
VGS = -10V
1.0
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = -4V
2.2
Figure 1. On Region Characteristics
1.8
VGS = -3V
2.6
40
VGS = 0V
10
TJ = 150oC
TJ = 25oC
1
TJ = -55oC
0.1
0.4
0.6
0.8
1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
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FDD4685 40V P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
10
4
10
VDD = -10V
Ciss
CAPACITANCE (pF)
8
VDD = -20V
6
VDD = -30V
4
2
0
3
10
Coss
2
10
Crss
f = 1MHz
VGS = 0V
1
0
10
20
30
Qg, GATE CHARGE(nC)
10
0.1
40
Figure 7. Gate Charge Characteristics
50
Figure 8. Capacitance vs Drain
to Source Voltage
10
9
8
7
6
5
50
TJ =
4
-ID, DRAIN CURRENT (A)
-IAS, AVALANCHE CURRENT(A)
1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
25oC
3
TJ = 125oC
2
40
VGS = -10V
30
20
Limited by Package
VGS = -4.5V
10
o
RθJC = 1.8 C/W
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE(ms)
0
100
P(PK), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
100us
10
1ms
0.1
10ms
1
DC
10
100
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
FDD4685 Rev.B
100
125
150
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
200
SINGLE PULSE
TJ = MAX RATED
TC = 25OC
75
o
100
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
50
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
1
25
300
FOR TEMPERATURES
250
VGS = -10V
200
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150
150 – T
c
----------------------125
Tc = 25oC
100
SINGLE PULSE
50
-3
10
-2
10
-1
10
t, PULSE WIDTH (s)
0
1
10
10
Figure 12. Single Pulse Maximum
Power Dissipation
4
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FDD4685 40V P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
0.1
0.01
1E-3
-5
10
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
SINGLE PULSE
-4
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
-3
-2
10
10
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDD4685 Rev.B
5
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FDD4685 40V P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT
THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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(a) are intended for surgical implant into the body, or (b) support
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in accordance with instructions for use provided in the labeling,
can be reasonably expected to result in significant injury to the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
FDD4685 Rev. B
6
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FDD4685 40V P-Channel PowerTrench® MOSFET
TRADEMARKS