FDS6064N3
20V N-Channel PowerTrench MOSFET
General Description
Applications
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• Synchronous rectifier
• DC/DC converter
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
5
Absolute Maximum Ratings
Symbol
Bottom-side
Drain Contact
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±8
ID
Drain Current
– Continuous
(Note 1a)
– Pulsed
23
A
60
PD
Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
3.0
W
–55 to +150
°C
40
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
0.5
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6064N3
FDS6064N3
13’’
12mm
2500 units
2002 Fairchild Semiconductor Corporation
FDS6064N3 Rev B2 (W)
FDS6064N3
May 2003
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
ID = 250 µA
VGS = 0 V,
ID = 250 µA, Referenced to 25°C
20
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V
11
mV/°C
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V ,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
ID = 250 µA
VDS = VGS,
ID = 250 µA, Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
gFS
Forward Transconductance
0.4
0.6
–3
1.5
V
VGS = 4.5 V,
ID = 23 A
ID = 22 A
VGS = 2.5 V,
ID = 18 A
VGS = 1.8 V,
VGS = 4.5 V, ID = 23 A,TJ = 125°C
VDS = 5 V,
ID = 23 A
3.4
3.8
4.9
4.5
179
4
5
7
8
VDS = 10 V,
f = 1.0 MHz
7191
pF
1403
pF
703
pF
Ω
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
V GS = 0 V,
VGS = 15 mV,
f = 1.0 MHz
1.2
VDD = 10 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6 Ω
22
35
ns
22
35
ns
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
153
245
ns
tf
Turn–Off Fall Time
77
123
ns
Qg
Total Gate Charge
70
98
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 10 V,
VGS = 4.5 V
ID = 23 A,
10
nC
15
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.5 A
Voltage
IF = 23 A,
Diode Reverse Recovery Time
Diode Reverse Recovery Charge diF/dt = 100 A/µs
0.6
(Note 2)
2.5
1.2
A
V
43
nS
55
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
40°C/W when
mounted on a 1in2 pad
of 2 oz copper
b)
85°C/W when mounted on
a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6064N3 Rev B2 (W)
FDS6064N3
Electrical Characteristics
FDS6064N3
Typical Characteristics
100
2.4
2.0V
1.8V
2.5V
80
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 4.5V
1.5V
60
40
20
0
0.0
2.2
VGS = 1.5V
2
1.8
1.6
1.8V
2.0V
1.4
2.5V
1.2
4.5V
0.8
0.5
1.0
1.5
0
20
40
VDS, DRAIN-SOURCE VOLTAGE (V)
80
100
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.009
1.6
ID = 23A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
ID = 11.5A
0.007
0.005
TA = 125oC
0.003
TA = 25oC
0.001
0.6
-50
-25
0
25
50
75
100
125
1
150
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
3.0V
1
60
40
o
TA =125 C
20
o
25 C
o
-55 C
0
10
o
TA = 125 C
1
o
25 C
0.1
o
-55 C
0.01
0.001
0.0001
0.5
0.7
0.9
1.1
1.3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
1.5
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6064N3 Rev B2 (W)
FDS6064N3
Typical Characteristics
10000
ID =
f = 1MHz
VGS = 0 V
10V
VDS = 5V
8000
4
15V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
5
3
2
CISS
6000
4000
COSS
1
2000
0
0
0
15
30
45
60
75
CRSS
0
90
Figure 7. Gate Charge Characteristics.
10
15
20
Figure 8. Capacitance Characteristics.
1000
50
100
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
100µs
RDS(ON) LIMIT
1ms
10ms
100ms
1s
10s
DC
10
1
VGS = 4.5V
SINGLE PULSE
RθJA = 85oC/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
SINGLE PULSE
RθJA = 85°C/W
TA = 25°C
40
30
20
10
0
0.01
100
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 85 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDS6064N3 Rev B2 (W)
FDS6064N3
Dimensional Outline and Pad Layout
FDS6064N3 Rev B2 (W)
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
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be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2