IRF9510, SiHF9510
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
•
- 100
RDS(on) (Ω)
VGS = - 10 V
1.2
Qg (Max.) (nC)
8.7
Qgs (nC)
2.2
Qgd (nC)
4.1
Configuration
Single
S
Dynamic dV/dt Rating
Repetitive Avalanche Rated
P-Channel
175 °C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
G
S
G
D
D
P-Channel MOSFET
ORDERING INFORMATION
Package
TO-220
IRF9510PbF
SiHF9510-E3
IRF9510
SiHF9510
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Currenta
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
Maximum Power Dissipation
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
SYMBOL
LIMIT
VDS
VGS
- 100
± 20
- 4.0
- 2.8
- 16
0.29
200
- 4.0
4.3
43
- 5.5
- 55 to + 175
300d
10
1.1
ID
IDM
TC = 25 °C
for 10 s
6-32 or M3 screw
EAS
IAR
EAR
PD
dV/dt
TJ, Tstg
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 18 mH, RG = 25 Ω, IAS = - 4.0 A (see fig. 12).
c. ISD ≤ - 4.0 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91072
S09-0017-Rev. A, 19-Jan-09
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1
IRF9510, SiHF9510
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
62
Case-to-Sink, Flat, Greased Surface
RthCS
0.50
-
Maximum Junction-to-Case (Drain)
RthJC
-
3.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VDS
VGS = 0 V, ID = - 250 µA
- 100
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.091
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 100 V, VGS = 0 V
-
-
- 100
VDS = - 80 V, VGS = 0 V, TJ = 150 °C
-
-
- 500
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = - 2.4 Ab
VGS = - 10 V
VDS = - 50 V, ID = - 2.4 Ab
µA
-
-
1.2
Ω
1.0
-
-
S
-
200
-
-
94
-
-
18
-
-
-
8.7
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
-
-
2.2
Gate-Drain Charge
Qgd
-
-
4.1
Turn-On Delay Time
td(on)
-
10
-
tr
-
27
-
-
15
-
-
17
-
-
4.5
-
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
td(off)
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 4.0 A, VDS = - 80 V,
see fig. 6 and 13b
VDD = - 50 V, ID = - 4.0 A,
RG = 24 Ω, RD = 11 Ω, see fig. 10b
tf
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
-
7.5
-
-
-
- 4.0
-
-
- 16
-
-
- 5.5
V
-
82
160
ns
-
0.15
0.30
µC
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 4.0 A, VGS = 0 Vb
TJ = 25 °C, IF = - 4.0 A, dI/dt = 100 A/µsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91072
S09-0017-Rev. A, 19-Jan-09
IRF9510, SiHF9510
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
101
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
- ID, Drain Current (A)
101
100
- 4.5 V
- ID, Drain Current (A)
Top
25 °C
175 °C
100
20 µs Pulse Width
VDS = - 50 V
20 µs Pulse Width
TC = 25 °C
100
101
4
- VDS, Drain-to-Source Voltage (V)
91072_01
- ID, Drain Current (A)
100
- 4.5 V
20 µs Pulse Width
TC = 175 °C
100
91072_02
101
- VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 175 °C
Document Number: 91072
S09-0017-Rev. A, 19-Jan-09
7
8
9
10
Fig. 3 - Typical Transfer Characteristics
RDS(on), Drain-to-Source On Resistance
(Normalized)
VGS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
Bottom - 4.5 V
6
- VGS, Gate-to-Source Voltage (V)
91072_03
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101 Top
5
91072_04
3.0
2.5
ID = - 4.0 A
VGS = - 10 V
2.0
1.5
1.0
0.5
0.0
- 60- 40 - 20 0
20 40 60 80 100 120 140 160 180
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRF9510, SiHF9510
350
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds Shorted
Crss = Cgd
Coss = Cds + Cgd
Capacitance (pF)
280
Ciss
210
140
Coss
70
Crss
- ISD, Reverse Drain Current (A)
Vishay Siliconix
101
175 °C
100
0
100
101
VDS = - 80 V
Operation in this area limited
by RDS(on)
5
VDS = - 50 V
16
2
VDS = - 20 V
12
8
4
10
100 µs
5
1 ms
2
1
10 ms
5
2
0.1
5
For test circuit
see figure 13
0
0
91072_06
2
4
6
8
QG, Total Gate Charge (nC)
TC = 25 °C
TJ = 175 °C
Single Pulse
2
10-2
0.1
10
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
5.0
4.0
- VSD, Source-to-Drain Voltage (V)
102
ID = - 4.0 A
3.0
Fig. 7 - Typical Source-Drain Diode Forward Voltage
- ID, Drain Current (A)
- VGS, Gate-to-Source Voltage (V)
2.0
91072_07
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
20
VGS = 0 V
10-1
1.0
- VDS, Drain-to-Source Voltage (V)
91072_05
25 °C
91072_08
2
5
1
2
5
10
2
5
102
2
5
103
- VDS, Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91072
S09-0017-Rev. A, 19-Jan-09
IRF9510, SiHF9510
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
4.0
+VDD
- 10 V
- ID, Drain Current (A)
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
3.0
Fig. 10a - Switching Time Test Circuit
2.0
td(on)
td(off) tf
tr
VGS
10 %
1.0
0.0
25
50
75
100
125
150
90 %
VDS
175
TC, Case Temperature (°C)
91072_09
Fig. 10b - Switching Time Waveforms
Fig. 9 - Maximum Drain Current vs. Case Temperature
Thermal Response (ZthJC)
10
D = 0.5
1
0.2
0.1
PDM
0.05
0.02
0.01
0.1
Single Pulse
(Thermal Response)
t1
t2
Notes:
1. Duty Factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
10-4
10-3
10-2
0.1
1
10
t1, Rectangular Pulse Duration (s)
91072_11
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary tp to obtain
required IAS
IAS
VDS
D.U.T
RG
VDS
+ V DD
VDD
IAS
tp
- 10 V
tp
0.01 Ω
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91072
S09-0017-Rev. A, 19-Jan-09
Fig. 12b - Unclamped Inductive Waveforms
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IRF9510, SiHF9510
Vishay Siliconix
EAS, Single Pulse Energy (mJ)
700
ID
- 1.6 A
- 2.8 A
Bottom - 4.0 A
Top
600
500
400
300
200
100
VDD = - 25 V
0
25
91072_12c
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91072
S09-0017-Rev. A, 19-Jan-09
IRF9510, SiHF9510
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
+
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
*
ISD
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91072.
Document Number: 91072
S09-0017-Rev. A, 19-Jan-09
www.vishay.com
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1