TIP42/TIP42A/TIP42B/TIP42C
PNP Epitaxial Silicon Transistor
Features
• Complementary to TIP41/TIP41A/TIP41B/TIP41C
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: TIP42
: TIP42A
: TIP42B
: TIP42C
- 40
- 60
- 80
- 100
V
V
V
V
VCEO
Collector-Emitter Voltage : TIP42
: TIP42A
: TIP42B
: TIP42C
- 40
- 60
- 80
- 100
V
V
V
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-6
A
ICP
Collector Current (Pulse)
-10
A
IB
Base Current
-2
A
PC
Collector Dissipation (TC=25°C)
65
W
Collector Dissipation (Ta=25°C)
2
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 65 ~ 150
°C
© 2008 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. A
www.fairchildsemi.com
1
TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
July 2008
Symbol
VCEO(sus)
ICEO
ICES
Parameter
* Collector-Emitter Sustaining Voltage
: TIP42
: TIP42A
: TIP42B
: TIP42C
Collector Cut-off Current
: TIP42/42A
: TIP42B/42C
Test Condition
IC = -30mA, IB = 0
Min.
Max.
-40
-60
-80
-100
Units
V
V
V
V
VCE = -30V, IB = 0
VCE = -60V, IB = 0
-0.7
-0.7
mA
mA
VCE = -40V, VEB = 0
VCE = -60V, VEB = 0
VCE = -80V, VEB = 0
VCE = -100V, VEB = 0
-400
-400
-400
-400
μA
μA
μA
μA
-1
mA
Collector Cut-off Current
: TIP42
: TIP42A
: TIP42B
: TIP42C
IEBO
Emitter Cut-off Current
VEB = -5V, IC = 0
hFE
* DC Current Gain
VCE = -4V, IC = -0.3A
VCE = -4V, IC = -3A
30
15
75
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = -6A, IB = -600mA
-1.5
V
VBE(sat)
* Base-Emitter Saturation Voltage
VCE = -4V, IC = -6A
-2.0
V
fT
Current Gain Bandwidth Product
VCE = -10V, IC = -500mA, f = 1MHz
3.0
MHz
* Pulse Test: PW≤300ms, Duty Cycle≤2%
© 2008 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. A
www.fairchildsemi.com
2
TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
Electrical Characteristics TC=25°C unless otherwise noted
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
1000
hFE, DC CURRENT GAIN
VCE = 4V
100
10
1
1
10
100
1000
10000
IC/IB = 10
1000
VBE(sat)
100
VCE(sat)
10
1
10000
10
IC[mA], COLLECTOR CURRENT
1000
10000
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
100
PC[W], POWER DISSIPATION
100
IC(MAX) (PULSE)
10
ms
0.5
s
5m
IC(MAX) (DC)
s
1m
IC[A], COLLECTOR CURRENT
100
1
TIP41 VCEO MAX.
TIP41A VCEO MAX.
TIP41B VCEO MAX.
TIP41C VCEO MAX.
0.1
80
60
40
20
0
1
10
100
0
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. A
25
Figure 4. Power Derating
www.fairchildsemi.com
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TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
Typical Characteristics
TIP42/TIP42A/TIP42B/TIP42C — PNP Epitaxial Silicon Transistor
Mechanical Dimensions
TO220
© 2008 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. A
www.fairchildsemi.com
4
TIP42/TIP42A/TIP42B/TIP42C PNP Epitaxial Silicon Transistor
© 2008 Fairchild Semiconductor Corporation
TIP42/TIP42A/TIP42B/TIP42C Rev. A
www.fairchildsemi.com
5