Enhancement of Al-doped ZnO optoelectronic properties by
regulating Au-NPs size and thermal treatments
Students : Yu-Hsin Weng , Han-Yueh Hsieh
Advisor : Yen-Sheng Lin
In the field of Optoelectronics
Abstract ： In this study, the lower cost chemical reduction of HAuCl4 had been used to form Au-NPs, and then the
Au-NPs were inserted to AZO thin film. The various Au-NPs sizes and thermal temperatures had been done to enhance the
optoelectronic properties of Al-doped ZnO thin film. The higher average transmittance as 80% and lower resistivity as
10-3Ω/cm will be our expectancy .
Research method：
Flow diagram
Work environment
ZnO
Ar 10sccm
O2 3sccm Glass Substrate
power 50W
Remove the Au-NPs/ZnO/Glass
Substrate from the RTA and
sintering uses of the RTA, the
sintering temperature are
100℃、150℃、200℃ 、
250℃、 300℃、350 ℃
, maintain 10min.
RTA
Glass Substrate
ZnO
Glass Substrate
5min
500°C
Change different BT and
HAuCl4 concentration ,
remove the Au-NPs with
the chemical centrifugal
extraction, the Au-NPs
sizes are 10nm and 20 nm.
Sputter AZO film of 40nm on top of
substrate with RF magnetron sputtering.
Work environment
Ar 10sccm
power 50W
Research equipment
Ultrasonic cleaner RF magnetron sputtering
RTA
AZO
Glass Substrate
Rapid Thermal Annealing
Glass Substrate
Etch ZnO/Substrate
of 1% KOH(80℃、
15sec), produce
micro-roughened
structures.
UV-VIS
spectrophotometer
Scanning electron
microscopy (SEM)
X-ray diffraction (XRD)
Hall-effect electrical
characteristic
Experiment result and discussion ：
Figures shown the resistivity of AZO thin film
with 10nm Au-NPs at different temperatures,
it declined about 10% at 250℃; the resistivity
of AZO thin film with 20nm Au-NPs had been
measured approach to 10-3Ω at 150℃.
Fig.1 The resistivity of AZO thin film
with various Au-NPs size and sintering
temperatures.
Fig.2 The average transmittance of
AZO thin film with 10nm Au-NPs
under various sintering temperatures.
Fig.3 Au-NPs with organic Fig.4 10nm Au-NPs Fig.5 20nm Au-NPs
schematic diagram schematic diagram
compounds
Conclusion：
The resistivity of AZO thin film with 10nm Au-NPs declined about
10% at 250℃, the average transmittance achieved more than 84%.
Fig.7 The HRTEM image
The resistivity of AZO thin film with 20nm Au-NPs reduced approach Fig.6 The HRTEM image
of 10nm Au-NPs
of 20nm Au-NPs
to 10-3Ω at 150℃. The further work will be to remove the organic
compounds arround Au-NPs, the main method is to increase the sintering temperature to more than 350℃.