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Part D
Materials fo
Part D Materials for Optoelectronics and Photonics
31 III-V Ternary and Quaternary Compounds
Sadao Adachi, Gunma, Japan
37 Optoelectronic Devices and Materials
Stephen Sweeney, Guildford, UK
Alfred Adams, Surrey, UK
32 Group III Nitrides
Ali Teke, Balikesir, Turkey
Hadis Morkoç, Richmond, USA
38 Liquid Crystals
David Dunmur, Southampton, UK
Geoffrey Luckhurst, Southampton, UK
33 Electron Transport Within the III–V Nitride
Semiconductors, GaN, AlN, and InN:
A Monte Carlo Analysis
Brian E. Foutz, Endicott, USA
Stephen K. O’Leary, Regina, Canada
Michael Shur, Troy, USA
Lester F. Eastman, Ithaca, USA
34 II–IV Semiconductors for Optoelectronics:
CdS, CdSe, CdTe
Jifeng Wang, Sendai, Japan
Minoru Isshiki, Sendai, Japan
35 Doping Aspects of Zn-Based Wide-Band-Gap
Semiconductors
Gertrude F. Neumark, New York, USA
Yinyan Gong, New York, USA
Igor L. Kuskovsky, Flushing, USA
36 II–VI Narrow-Bandgap Semiconductors
for Optoelectronics
Ian M. Baker, Southampton, UK
39 Organic Photoconductors
David S. Weiss, Rochester, USA
Martin Abkowitz, Webster, USA
40 Luminescent Materials
Andy Edgar, Wellington, New Zealand
41 Nano-Engineered Tunable Photonic Crystals
in the Near-IR and Visible Electromagnetic
Spectrum
Harry Ruda, Toronto, Canada
Naomi Matsuura, Toronto, Canada
42 Quantum Wells, Superlattices,
and Band-Gap Engineering
Mark Fox, Sheffield, UK
43 Glasses for Photonic Integration
Ray DeCorby, Edmonton, Canada
44 Optical Nonlinearity in Photonic Glasses
Keiji Tanaka, Sapporo, Japan
45 Nonlinear Optoelectronic Materials
Lukasz Brzozowski, Toronto, ON, Canada
Edward Sargent, Toronto, Canada