439
Part C
Materials
Part C Materials for Electronics
21 Single-Crystal Silicon:
Electrical and Optical Properties
Shlomo Hava, Beer Sheva, Israel
Mark Auslender, Beer Sheva, Israel
25 Amorphous Semiconductors: Structure,
Optical, and Electrical Properties
Kazuo Morigaki, Tokyo, Japan
Chisato Ogihara, Ube, Japan
22 Silicon–Germanium:
Properties, Growth and Applications
Peter Ashburn, Southampton, UK
Darren M. Bagnall, Southampton, UK
26 Amorphous and Microcrystalline Silicon
Akihisa Matsuda, Chiba, Japan
23 Gallium Arsenide
Mike Brozel, Glasgow, UK
24 High-Temperature Electronic Materials:
Silicon Carbide and Diamond
Magnus Willander, Göteborg, Sweden
Milan Friesel, Göteborg, Sweden
Qamar-ul Wahab, Linköping, Sweden
Boris Straumal, Chernogolovka, Russia
27 Ferroelectric Materials
Roger Whatmore, Lee Maltings, Ireland
28 Dielectric Materials for Microelectronics
Robert M. Wallace, Richardson, USA
29 Thin Films
Robert D. Gould† , Keele, UK
30 Thick Films
Neil White, Highfield, UK