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1
Perspectives on Electronic
and Optoelectronic Materials
by Tim Smeeton, Colin Humphreys
Many thanks to Dr Ron Broom for his helpful comments
on this manuscript.
A.5
Defects in Monocrystalline Silicon
by Wilfried von Ammon
The author is greatly indebted to W. Haeckl, E. Dornberger, D. Gräf and R. Schmolke for many helpful
discussions and for providing some of the figures.
A.7
Photoconductivity in Materials Research
by Monica Brinza, Jan Willekens, Mohammed L.
Benkhedir, Guy J. Adriaenssens
The authors are grateful to the Fonds voor Wetenschappelijk Onderzoek – Vlaanderen for its financial support
of their research.
A.9
Acknowl.
Acknowledgements
and underpinning characterisation research programmes
drawn from to illustrate this chapter. University of
Nottingham: with thanks to Tom Foxon, T.S. Cheng,
Sergei Novikov and Chris Statton for the provision of
MBE GaN samples and supporting XRD analysis; and
to Mike Fay for GaAs CBED patterns. University of
Cambridge: with thanks to Colin Humphreys for provision of instrumentation; Chris Boothroyd for EDX
and HAADF data on the SiGe samples; Michael Natusch for GaN EELS data; Robin Taylor for RHEED
stage development; David Tricker for the Si-doped GaN
micrograph; and Yan Xin for the GaN images used
for dislocation analysis. University of Warwick: with
thanks to Richard Kubiak and E.H.C. Parker for supplying SiGe/Si samples. Polish academy of Sciences,
Warsaw: with thanks to Jan Weyher for homoepitaxial GaN samples. With thanks also to the EPSRC for
funding support.
Charge Transport in Disordered Materials
by S. D. Baranovskii, O. Rubel
The authors are indebted to numerous colleagues for
stimulating and enlightening discussions. Among those
are Boris Shklovski (University of Minnesota), Alexei
Efros and Michael Raikh (Utah University), Hellmut
Fritzsche (Chicago University), Peter Thomas, Walther
Fuhs and Heinz Bässler (Philipps-University Marburg),
Igor Zvyagin (Moscow State University) and many
other colleagues. Financial support of the Deutsche
Forschungsgemeinschaft is gratefully acknowledged.
A.11 Ionic Conduction and Applications
by Harry L. Tuller
Support from the National Science Foundation (Grant
Nos. DMR-0243993 and ECS-0428696) and AROMURI under grant DAAD-0101-0566 for topics related
to this work are highly appreciated. In assembling this
work, I drew on earlier journal and proceedings articles
published by myself or in conjunction with colleagues.
In particular, I wish to acknowledge my collaborator in
Ref. 2, Prof. P. Knauth of the Université de Provence,
Marseille, France.
B.17 Structural Characterization
by Paul D. Brown
As ever, there are many people one wishes to acknowledge for their involvement in the growth, processing
B.19 Thermal Properties and Thermal Analysis:
Fundamentals, Experimental Techniques
and Applications
by S.O. Kasap
The authors thank NSERC for financial support.
B.20 Electrical Characterization
of Semiconductor Materials and Devices
by M. Jamal Deen, Fabien Pascal
The authors are very grateful to Drs. O. Marinov and
D. Landheer for their careful review of the manuscript
and their assistance. They are also grateful to several
previous students and researchers whose collaborative
research is discussed here. Finally, they are grateful to
NSREC of Canada, the Canada Research Chair program and the CNRS of France for supporting this
research.
C.23 Gallium Arsenide
by Mike Brozel
The author is delighted to acknowledge the help
given to him over many years by his colleagues
and friends both at UMIST and in industry. Specifically, he wishes to thank R. Blunt, I. R. Grant, and
R. H. Wallis for their careful and critical reading of this
manuscript.
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Acknowledgements
Acknowl.
C.24 High-Temperature Electronic Materials:
Silicon Carbide and Diamond
by Magnus Willander, Milan Friesel, Qamar-ul
Wahab, Boris Straumal
Magnus Willander and Milan Friesel would like to thank
Dr. V. Narayan for checking the text, and Dr. A. Baranzahi for letting us use Figs. 24.2–24.3. Qamar-ul Wahab
thanks Mr. Amir Karim for all his support.
C.25 Amorphous Semiconductors:
Structure, Optical, and Electrical Properties
by Kazuo Morigaki, Chisato Ogihara
We wish to thank M. Ichihara, K. Suzuki and M. Yamaguchi, Institute for Solid State Physics, University of
Tokyo, for providing us with their unpublished materials (Fig. 25.7a,b). Stimulating and helpful discussions
were held with Prof. S. Kugler during the stay of one of
us (K.M.) at the Budapest University of Technology and
Economics, for which K.M. is grateful.
C.28 Dielectric Materials for Microelectronics
by Robert M. Wallace
RMW gratefully acknowledges the many discussions
and hard work of his colleagues and students engaged
in gate-stack research. This work is supported in part
by the Texas Advanced Technology Program and the
Semiconductor Research Corporation.
C.29 Thin Films
by Robert D. Gould†
The author wishes to acknowledge the general support
and encouragement of Prof. C. A. Hogarth, Department
of Physics, Brunel University, and of Prof. W. Fuller, Department of Physics, Keele University. Particular thanks
are also due to Prof. E. W. Williams, Electronic Engineering Group, Keele University for collaborative work
and permission to reproduce Figs. 29.6 and 29.7.
D.36 II–VI Narrow-Bandgap Semiconductors
for Optoelectronics
by Ian M. Baker
The author wishes to express his gratitude to Mike Kinch
of DRS Technologies, Kadri Vural and Jose Arias of
Rockwell/Boeing and Marion Reine and coworkers at
BAE SYSTEMS, Lexington for supplying material for
this chapter and valuable advice. Also the advice and
support from my technical colleagues, particularly: Peter
Capper, Chris Maxey, Chris Jones and Les Hipwood, and
my management here at SELEX Infrared, particularly
Graham Hall. Thanks also to my wife, Lesley, for help
with the English.
D.37 Optoelectronic Devices and Materials
by Stephen Sweeney, Alfred Adams
It is a pleasure to acknowledge the many people with
whom the authors have worked with over the years. In
particular, we would like to thank the staff and students,
past and present, at the University of Surrey for their
wide-ranging contributions to this work. We would also
like to thank the editor, Safa Kasap, for his support and
encouragement in preparing this chapter. On a personal
note, SJS would like to thank his wife for her support
whilst writing this chapter.
D.44 Optical Nonlinearity in Photonic Glasses
by Keiji Tanaka
The author would like to thank his students, K. Sugawara and N. Minamikawa, for preparing illustrations
and giving comments.
E.48 Photoconductors for X-Ray Image Detectors
by M. Zahangir Kabir, Safa Kasap, John Rowlands
We would like to thank Dr. Randy Luhta for useful
discussions. We acknowledge financial support from
NSERC.
E.52 High-Temperature Superconductors
by Rainer Wesche
D.33 Electron Transport Within the III–V Nitride
Semiconductors, GaN, AlN, and InN:
A Monte Carlo Analysis
by Brian E. Foutz, Stephen K. O’Leary, Michael
Shur, Lester F. Eastman
Financial support from the Office of Naval Research and
the Natural Sciences and Engineering Research Council of Canada is gratefully acknowledged. The use of
equipment granted from the Canada Foundation for
Innovation, and equipment loaned from the Canadian
Microelectronics Corporation, is also acknowledged.
I wish to thank P. Bruzzone for his support and encouragement. The careful reviewing and many constructive
suggestions on the manuscript by J. F. Crawford are
especially appreciated.
E.53 Molecular Electronics
by Michael Petty
The author would like to thank the staff and students of,
and visitors to, the Durham Centre for Molecular and
Nanoscale Electronics, who have contributed to some of
work described in this chapter. Particular thanks are due
Acknowledgements
E.54 Organic Materials for Chemical Sensing
by Asim Kumar Ray
The authors are grateful to the Engineering & Physical Research Council (UK) and the European Union for
financial support of their work over the last 20 years.
Gratitude is also due to Dr. S. C. Thrope of the Health
Safety Executive (UK), Dr. M. Hofton of TQ Environmental Plc., Prof. K. C. Thompson of ALControl and
Dr. F. A. Grunfeld of NIMA Technology for their collaboration and support. Prof. M. J. Cook of the University
of East Anglia remains a generous provider of novel phthalocyanine compounds for sensing experiments over
the years. Above all, the contributions from Drs. R. Capan, O. Omar and A. V. Nabok are acknowledged with
gratitude.
Acknowl.
to Fraser Stoddart for useful discussions on the rotaxane
switching devices and for providing Fig. 53.17a. Thanks
are also due to Karl Coleman for providing the drawings
of carbon nanotubes, Fig. 53.7.
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