Manufacture of LED Modules
UV
Material
InGaN
封裝
模組/外部稜鏡
組裝
晶片切割
InGaAlP
IR
GaAlAs
晶圓製造
(Epitaxy)
Epi-Wafer
The materials for LED
processes are deposited
on the substrates.
The result wafer is called
a epi-wafer.
TOPLEDPackage
LED-Chip
Front end processes
involve structuring and
separating the LED
chips.
The final die is called
the LED chip.
Back end processes
comprise assembling
the LED chips in a
package.
Different designs are
possible both in radial
and SMT technology.
The LED is given its
outward appearance
LampModule
Individual LEDs can be
integrated to form a light
source.
Different lamp modules are
manufactured to suit
different application.
(OSRAM)
1
Different Kinds of Microscopes
OM: (Au)
SEM: (Aluminum)
0.3µm
1µm
TEM: (AlAs)
0.02µm
STM: (Platinum)
AFM:（聚苯乙烯塑膠）
15Å
2.78Å
100nm
2
Optical Microscope (Nikon)
金屬接觸面
3
Scanning Electrical Microscope
4
Atomic Force Microscope
5
Array Spectrometer
LED放置處
Detector
6
LED晶粒/晶圓點測機

IPT 6000 整合型LED
晶粒/晶圓點測機：
可測power、
wavelength及
forward voltage
等特性
7
Insulator, Semiconductor, and Conductor
(絕緣體)
(半導體)
(導體)
(S. M. Sze, “Semiconductor
Devices: Physics and Technology”)
8
The Periodic Table
(E. F. Schubert, “Light-Emitting Diode”)
9
Applications of Compound Semiconductor
Materials
Substrates
Element
Si
Ge
Compound
GaAs
InP
Sapphire
SiC
ZnS
(Thomas Swan)
Application
Integrated Circuits (ICs)
Solar Cells
Micromechanics
High Performance ICs
Light Emitting Diodes
Photo Detectors
Semiconductor Laser
10
Wafer (Substrate) Fabrication
(M. Quirk and J. Serda, “Semiconductor
Manufacturing Technology”)
11
LEC Crystal Growth System
(J. Singh, “Electronic and
Optoelectronic Properties of
Semiconductor Structures”)
12
HB Crystal Growth System
(J. Singh, “Electronic and Optoelectronic
Properties of Semiconductor Structures”)
13
VGF Crystal Growth System
(AXT)
14
Comparison of VGF, LEC, and HB Method
GaAs
VGF
LEC
HB
SI Wafers
Yes
Yes
No
SC Wafers
Yes
No
Yes
EPD
(Etch Pit Density)
Very Low
High
Low
Stress
Low
High
Medium
Uniformity
Good
Fair
Poor
Diameter Scale Up
Good
Good
Poor
15
CZ Crystal Growth System
(R. F. Pierret, “Semiconductor Device Fundamentals”)
16
CZ Crystal Growth System
Si
(H. Xiao, “Introduction to Semiconductor Manufacturing Technology”)
17
III-V Compound Single Crystal Ingot
GaAs
(Freiberger)
18
Si and GaAs Crystal Structure
Si (Diamond)
GaAs (Zincblende)
(R. F. Pierret, “Semiconductor
Device Fundamentals”)
19
III-V Wafer (US and E/J) Specification
GaAs
US
GaAs
E/J
Typical Miller Indices
20
Silicon Lattice Viewed Along Different Axis
(M. Quirk and J. Serda, “Semiconductor
Manufacturing Technology”)
21
Lattice Matching
(E. F. Schubert, “Light-Emitting Diode”)
Lattice matching crucial for high efficiency
Multitude of defects are created in mismatched structure
22
Pseudomorphic Layers
(E. F. Schubert, “Light-Emitting Diode”)
(擠壓形變)
(拉伸形變)
(L. A. Coldren and S. W. Corzine, “Diode Lasers and Photonic Integrated Circuits”)
23
AlGaInP Compound
(E. F. Schubert, “Light-Emitting Diode”)
24
Bandgap Energy Eg (eV)
AlGaInN Compound
Lattice Constant a0 (Å)
25
Organo-Metallic Vapor-Phase Epitaxy (MOVPE)
(L. A. Coldren and S. W. Corzine, “Diode Lasers
and Photonic Integrated Circuits”)
26
Principle of LP-MOCVD Epitaxy
Exhaust
gas blending
H ,N
2
2
reactor
Ga (CH ) + AsH
3
3 3
Ga (CH ) + NH
3
3 3
scrubbing
system
GaAs + 3CH
4
GaN + 3CH
4
vacuum pump
TMGa, AsH
3
TMAl, TMGa, TMIn , PH
3
throttle valve
5 - 100 rpm
P=10-200 mbar
TG ~ 400 - 1200°C
TMGa, NH
3
filter unit
substrate
high purity, precise mixing
GaAs, InP, sapphire
crystal quality, thickness
uniformity, reproducibility
production oriented
low cost of ownership
safety
(Thomas Swan)
27
The Horizontal Reactor
(top view)
reactor wall
susceptor
gas outlet
gas inlet
substrate
(Thomas Swan)
28
Mass-Flow Controller (MFC)
(M. Quirk and J. Serda, “Semiconductor
Manufacturing Technology”)
29
Manifold
Accumulated type block-valve & MFC unit
Simplification of maintenance
High adaptability to change source line numbers
30
Throttle Valve
(MKS)
31
Organometallic Bubbler
(Akzo Nobel)
Inlet Outlet
32
Hydride Gas Source
(Cylinder Cabinet)
化學式
中文名稱
易燃
非易燃
窒息
V
V
毒性
H2
氫氣
V
N2
氮氣
AsH3
氫化砷
V
V
PH3
氫化磷
V
V
SiH4
四氫化矽
V
V
Si2H6
二矽乙烷
V
V
自給式空氣呼吸器
(SCBA)
33
Double-Crystal X-Ray Diffraction
(DCD) Measurements
Λ= (λ/2(cosθ)∆θ)
= 368.8Å
QW(10sec):
InAs0.12P0.88: 61.4Å
Barrier(50sec):
InP: 307.4Å
34
Photoluminescence (PL) Measurements (1)
Al0.2Ga0.8As
35
Facilities
36